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Электронный компонент: 2MBI150NB-120

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IGBT MODULE ( N series )
n
n
Features
Square RBSOA
 Low Saturation Voltage
 Less Total Power Dissipation
 Improved FWD Characteristic
 Minimized Internal Stray Inductance
 Overcurrent Limiting Function (
4~5
Times Rated Current)
n
n
Applications
High Power Switching
 A.C. Motor Controls
 D.C. Motor Controls
 Uninterruptible Power Supply
n
n
Outline Drawing
n
n
Maximum Ratings and Characteristics
Absolute Maximum Ratings
( T
c
=25C
)
Items
Symbols
Ratings
Units
Collector-Emitter Voltage
V
CES
1200
V
Gate -Emitter Voltage
V
GES
20
V
Continuous
I
C
150
Collector
1ms
I
C PULSE
300
Current
Continuous
-I
C
150
1ms
-I
C PULSE
300
Max. Power Dissipation
P
C
1100
W
Operating Temperature
T
j
+150
C
Storage Temperature
T
stg
-40
+125
C
Isolation Voltage
A.C. 1min.
V
is
2500
V
Mounting *1
3.5
Terminals *1
3.5
Note: *1:Recommendable Value; 2.5
3.5 Nm (M5)
Electrical Characteristics
( at T
j
=25C )
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
Zero Gate Voltage Collector Current
I
CES
V
GE
=0V V
CE
=1200V
2.0
mA
Gate-Emitter Leackage Current
I
GES
V
CE
=0V V
GE
=
20V
30
A
Gate-Emitter Threshold Voltage
V
GE(th)
V
GE
=20V I
C
=150mA
4.5
7.5
V
Collector-Emitter Saturation Voltage
V
CE(sat)
V
GE
=15V I
C
=150A
3.3
V
Input capacitance
C
ies
V
GE
=0V
24000
Output capacitance
C
oes
V
CE
=10V
8700
pF
Reverse Transfer capacitance
C
res
f=1MHz
7740
t
ON
V
CC
=600V
0.65
1.2
t
r
I
C
=150A
0.25
0.6
t
OFF
V
GE
=
15V
0.85
1.5
t
f
R
G
=5.6
0.35
0.5
Diode Forward On-Voltage
V
F
I
F
=150A V
GE
=0V
3.0
V
Reverse Recovery Time
t
rr
I
F
=150A
350
ns
Thermal Characteristics
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
R
th(j-c)
IGBT
0.11
Thermal Resistance
R
th(j-c)
Diode
0.18
C/W
R
th(c-f)
With Thermal Compound
0.025
n
n
Equivalent Circuit
Screw Torque
Turn-on Time
Turn-off Time
s
A
Nm
0
1 0 0
2 0 0
3 0 0
1 0
1 0 0
1 0 0 0
tf
tr
toff
ton
Switching time vs. Collector current
Vcc=600V, RG=5.6
, V
G E
=15V, Tj=25C
Switching time : ton, tr, toff, tf [nsec]
Collector current : Ic [A]
0
1
2
3
4
5
0
1 0 0
2 0 0
3 0 0
V
G E
=20V,15V,12V,10V,
Collector-Emitter voltage : V
C E
[V]
Collector current : Ic [A]
8V
Collector current vs. Collector-Emitter voltage
Tj=125C
0
1
2
3
4
5
0
1 0 0
2 0 0
3 0 0
Collector current vs. Collector-Emitter voltage
Tj=25C
Collector current : Ic [A]
Collector-Emitter voltage : V
C E
[V]
8V
V
G E
=20V,15V,12V,10V
0
5
1 0
1 5
2 0
2 5
0
2
4
6
8
1 0
75A
150A
300A
Collector-Emitter vs. Gate-Emitter voltage
Tj=25C
Ic=
Collector-Emitter voltage :V
CE
[V]
Gate-Emitter voltage : V
G E
[V]
0
5
1 0
1 5
2 0
2 5
0
2
4
6
8
1 0
Collector-Emitter vs. Gate-Emitter voltage
Tj=125C
75A
150A
300A
Ic=
Collector-Emitter voltage V
CE
[V]
Gate-Emitter voltage : V
G E
[V]
0
1 0 0
2 0 0
3 0 0
1 0
1 0 0
1 0 0 0
Switching time vs. Collector current
Vcc=600V, R
G
=5.6
, V
G E
=15V, Tj=125C
tf
tr
ton
toff
Switching time : ton, tr, toff, tf [nsec]
Collector current : Ic [A]
0,001
0,01
0,1
1
0,001
0,01
0,1
IGBT
Diode
Transient thermal resistance
Thermal resistance : Rth(j-c) [C/W]
Pulse width : PW [sec]
0
5 0 0
1 0 0 0
1 5 0 0
2 0 0 0
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
800V
600V
Vcc=400V
0
5
10
15
20
25
Dynamic input characteristics
Tj=25C
Collector-Emitter voltage : V
CE
[V]
Gate charge : Qg [nC]
1 0
1 0 0
1 0 0 0
tf
tr
toff
ton
Switching time vs. RG
Vcc=600V, Ic=150A, VGE=15V, Tj=25C
Switching time : ton, tr, toff, tf [nsec]
Gate resistance : R
G
[
]
0
1
2
3
4
5
0
1 0 0
2 0 0
3 0 0
Tj=125C 25C
Forward current vs. Forward voltage
V
G E
= O V
Forward current : I
F
[A]
Forward voltage : V
F
[V]
0
1 0 0
2 0 0
3 0 0
1 0
1 0 0
Irr
25C
trr
25C
trr
125C
Irr
125C
Reverse recovery characteristics
trr, Irr vs. I
F
Reverse recovery current : Irr [A]
Reverse recovery time : trr [nsec]
Forward current : I
F
[A]
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1 2 0 0
1 4 0 0
RBSOA (Repetitive pulse)
S C S O A
(non-repetitive pulse)
Reversed biased safe operating area
+VGE=15V, -V
G E
<15V, Tj<125C, R
G
>5.6
Collector current : Ic [A]
Collector-Emitter voltage : V
C E
[V]
0 5 1 0 1 5 2 0 2 5 3 0 3 5
1
1 0
1 0 0
Cres
Coes
Cies
Capacitance vs. Collector-Emitter voltage
Tj=25C
Capacitance : Cies, Coes, Cres [nF]
Collector-Emitter Voltage : V
C E
[V]
0 5 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0
0
1 0
2 0
3 0
4 0
5 0
Err 25C
Err 125C
Switching loss vs. Collector current
Vcc=600V, R
G
=5.6
, V
G E
=15V
Switching loss : Eon,Eoff,Err [mJ/cycle]
Collector Current : Ic [A]
Eon 25C
Eon 125C
Eoff 25C
Eoff 125C
Fuji Electric GmbH Fuji Electric (UK) Ltd.
Lyoner Strae 26 Commonwealth House
2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0 Tel.: 0181 - 233 11 30
Fax.: 069 - 66 90 29 - 56 Fax.: 0181 - 233 11 60
P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com
P.O. Box 702708 - Dallas, TX - (972) 733-1700 - (972) 381-9991 (fax)