2MBI200NB-120-01
IGBT Module
1200V / 200A 2 in one-package
Features
VCE(sat) classified for easy parallel connection
High speed switching
Voltage drive
Low inductance module structure
Applications
Inverter for Motor drive
AC and DC Servo drive amplifier
Uninterruptible power supply
Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings
(at Tc=25C unless otherwise specified)
Item Symbol
Collector-Emitter voltage V
CES
Gate-Emitter voltage V
GES
Collector Continuous I
C
current 1ms I
C
pulse
-I
C
1ms -I
C
pulse
Max. power dissipation P
C
Operating temperature T
j
Storage temperature T
stg
Isolation voltage V
is
Screw torque Mounting *
1
Terminals *
2
Rating
1200
20
200
400
200
400
1500
+150
-40 to +125
AC 2500 (1min.)
3.5
4.5
Unit
V
V
A
A
A
A
W
C
C
V
Nm
Nm
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
on
t
r
t
off
t
f
V
F
t
rr
2.0
30
4.5 7.5
3.3
32000
11600
10320
0.65 1.2
0.25 0.6
0.85 1.5
0.35 0.5
3.0
0.35
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=20V
V
CE
=20V, I
C
=200mA
V
GE
=15V, I
C
=200A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=200A
V
GE
=15V
R
G
=4.7ohm
I
F
=200A, V
GE
=0V
I
F
=200A
mA
A
V
V
pF
s
V
s
Electrical characteristics (at Tj=25C unless otherwise specified)
Thermal resistance characteristics
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Thermal resistance Rth(j-c)
Rth(c-f)*
0.085
0.18
0.025
IGBT
Diode
the base to cooling fin
C/W
C/W
C/W
* :
This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
Current control circuit
G1 E1 G2 E2
C1
E2
C2E1
*
1 :
Recommendable value : 2.5 to 3.5 Nm (M5) or (M6)
*
2 :
Recommendable value : 3.5 to 4.5 Nm (M6)
V
CE(sat)
classification
Rank Lenge Conditions
F 2.25 to 2.50V
A 2.40 to 2.65V Ic = 200A
B 2.55 to 2.80V V
GE
= 15V
C 2.70 to 2.95V Tj = 25C
D 2.85 to 3.10V
E 3.00 to 3.30V
2MBI200NB-120-01
IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage
Tj=25C
Collector current vs. Collector-Emitter voltage
Tj=125C
Collector-Emitter vs. Gate-Emitter voltage
Tj=25C
Collector-Emitter vs. Gate-Emitter voltage
Tj=125C
Switching time vs. Collector current
Vcc=600V, RG=4.7 ohm, VGE=15V, Tj=25C
Switching time vs. Collector current
Vcc=600V, RG=4.7 ohm, VGE=15V, Tj=125C
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
Collector current : Ic [A]
500
400
300
200
100
0
500
400
300
200
100
0
0 1 2 3 4 5
0 1 2 3 4 5
Collector-Emitter v
oltage :
VCE [V]
Collector-Emitter v
oltage :
VCE [V]
10
8
6
4
2
0
0 5 10 15 20 25
0 5 10 15 20 25
10
8
6
4
2
0
Gate-Emitter voltage : VGE [V]
Gate-Emitter voltage : VGE [V]
Switching time :
ton, tr
, toff
, tf [n sec.]
1000
100
10
0 100 200 300 400
Collector current : Ic [A]
0 100 200 300 400
Collector current : Ic [A]
Switching time :
ton, tr
, toff
, tf [n sec.]
1000
100
10
2MBI200NB-120-01
IGBT Module
Switching time vs. RG
Vcc=600V, Ic=200A, VGE=15V, Tj=25C
Dynamic input characteristics
Tj=25C
Gate resistance : RG [ohm]
10
Gate charge : Qg [nC]
0 500 1000 1500 2000 2500
100
1000
1000
800
600
400
200
0
Switching time :
ton, tr
, toff
, tf [n sec.]
Collector-Emitter v
o
ltage :
VCE [V]
F
orward current :
IF [A]
500
400
300
200
100
0
0 1 2 3 4 5
Gate-Emitter v
oltage :
V
GE [V]
0
5
10
15
20
25
Forward voltage : VF [V]
Re
v
erse reco
v
e
r
y
current :
Irr [A]
Re
v
erse reco
v
e
r
y
time :
trr [n sec.]
Forward current vs. Forward voltage
VGE=0V
Reverse recovery characteristics
trr, Irr, vs. IF
Forward current : IF [A]
100
Ther
mal resistance :
Rth (j-c) [C/W]
Transient thermal resistance
0.01
0.1
0.001 0.01 0.1 1
Pulse width : PW [sec.]
Reversed biased safe operating area
+VGE=15V, -VGE = 15V, Tj = 125C, RG = 4.7ohm
0 100 200 300 400
<
<
>
2000
1600
1200
400
0
0 200 400 600 800 1000 1200
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
0.001
800
2MBI200NB-120-01
IGBT Module
Outline Drawings, mm
Switching loss vs. Collector current
Vcc=600V, RG=4.7 ohm, VGE=15V
Switching loss :
Eon, Eoff
, Err [mJ/cycle]
Collector current : Ic [A]
0
10
20
60
0 100 200 300 400
Collector-Emitter voltage : VCE [V]
0 5 10 15 20 25 30 35
1
10
100
Capacitance :
Cies, Coes
, Cres [nF]
Capacitance vs. Collector-Emitter voltage
Tj=25C
50
40
30
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