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Электронный компонент: 2MBI200NE-120

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IGBT MODULE ( N series )
n
n
Features
Square RBSOA
 Low Saturation Voltage
 Less Total Power Dissipation
 Improved FWD Characteristic
 Minimized Internal Stray Inductance
 Overcurrent Limiting Function (
4~5
Times Rated Current)
n
n
Applications
High Power Switching
 A.C. Motor Controls
 D.C. Motor Controls
 Uninterruptible Power Supply
n
n
Outline Drawing
n
n
Maximum Ratings and Characteristics
Absolute Maximum Ratings
( T
c
=25C
)
Items
Symbols
Ratings
Units
Collector-Emitter Voltage
V
CES
1200
V
Gate -Emitter Voltage
V
GES
20
V
Continuous
I
C
200
Collector
1ms
I
C PULSE
400
Current
Continuous
-I
C
200
1ms
-I
C PULSE
400
Max. Power Dissipation
P
C
1500
W
Operating Temperature
T
j
+150
C
Storage Temperature
T
stg
-40
+125
C
Isolation Voltage
A.C. 1min.
V
is
2500
V
Mounting *1
3.5
Terminals *2
4.5
Note: *1:Recommendable Value; 2.5
3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5
4.5 Nm (M6)
Electrical Characteristics
( at T
j
=25C )
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
Zero Gate Voltage Collector Current
I
CES
V
GE
=0V V
CE
=1200V
2.0
mA
Gate-Emitter Leackage Current
I
GES
V
CE
=0V V
GE
=
20V
30
A
Gate-Emitter Threshold Voltage
V
GE(th)
V
GE
=20V I
C
=200mA
4.5
7.5
V
Collector-Emitter Saturation Voltage
V
CE(sat)
V
GE
=15V I
C
=200A
3.3
V
Input capacitance
C
ies
V
GE
=0V
32000
Output capacitance
C
oes
V
CE
=10V
11600
pF
Reverse Transfer capacitance
C
res
f=1MHz
10320
t
ON
V
CC
=600V
0.65
1.2
t
r
I
C
=200A
0.25
0.6
t
OFF
V
GE
=
15V
0.85
1.5
t
f
R
G
=4.7
0.35
0.5
Diode Forward On-Voltage
V
F
I
F
=200A V
GE
=0V
3.0
V
Reverse Recovery Time
t
rr
I
F
=200A
350
ns
Thermal Characteristics
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
R
th(j-c)
IGBT
0.085
Thermal Resistance
R
th(j-c)
Diode
0.22
C/W
R
th(c-f)
With Thermal Compound
0.025
n
n
Equivalent Circuit
Screw Torque
Turn-on Time
Turn-off Time
s
A
Nm
0
100
200
300
400
10
100
1000
t
f
t
r
t
off
t
on
Switching time vs. Collector current
V
CC
=600V, R
G
=4.7
, V
GE
=15V, T
j
=25C
Switching time : t
on
, t
r
, t
off
, t
f
[nsec]
Collector current : I
C
[A]
0
1
2
3
4
5
0
100
200
300
400
500
V
GE
=20V,15V,12V,10V,
Collector-Emitter voltage : V
CE
[V]
Collector current : I
C
[A]
8V
Collector current vs. Collector-Emitter voltage
T
j
=125C
0
1
2
3
4
5
0
100
200
300
400
500
Collector current vs. Collector-Emitter voltage
T
j
=25C
Collector current : I
C
[A]
Collector-Emitter voltage : V
CE
[V]
8V
V
GE
=20V,15V,12V,10V
0
5
10
15
20
25
0
2
4
6
8
10
100A
200A
400A
Collector-Emitter vs. Gate-Emitter voltage
T
j
=25C
I
C
=
Collector-Emitter voltage : V
CE
[V]
Gate-Emitter voltage : V
GE
[V]
0
5
10
15
20
25
0
2
4
6
8
10
Collector-Emitter vs. Gate-Emitter voltage
T
j
=125C
100A
200A
400A
I
C
=
Collector-Emitter voltage : V
CE
[V]
Gate-Emitter voltage : V
GE
[V]
0
100
200
300
400
10
100
1000
Switching time vs. Collector current
V
CC
=600V, R
G
=4.7
, V
GE
=15V, T
j
=125C
t
f
t
r
t
on
t
off
Switching time : t
on
, t
r
, t
off
, t
f
[nsec]
Collector current : I
C
[A]
0,001
0,01
0,1
1
0,001
0,01
0,1
IGBT
Diode
Transient thermal resistance
Thermal resistance : R
th(j-c)
[C/W]
Pulse width : PW [sec]
0
500
1000
1500
2000
2500
0
200
400
600
800
1000
800V
600V
V
CC
=400V
0
5
10
15
20
25
Dynamic input characteristics
T
j
=25C
Collector-Emitter voltage : V
CE
[V]
Gate charge : Q
G
[nC]
10
100
1000
t
f
t
r
t
off
t
on
Switching time vs. R
G
V
CC
=600V, I
C
=200A, V
GE
=15V, T
j
=25C
Switching time : t
on
, t
r
, t
off
, t
f
[nsec]
Gate resistance : R
G
[
]
0
1
2
3
4
5
0
100
200
300
400
500
T
j
=125C 25C
Forward current vs. Forward voltage
V
GE
= O V
Forward current : I
F
[A]
Forward voltage : V
F
[V]
0
100
200
300
400
100
I
rr
25C
t
rr
25C
t
rr
125C
I
rr
125C
Reverse recovery characteristics
t
rr
, I
rr
vs. I
F
Reverse recovery current : I
rr
[A]
Reverse recovery time : t
rr
[nsec]
Forward current : I
F
[A]
0
200
400
600
800
1000
1200
0
400
800
1200
1600
2000
RBSOA (Repetitive pulse)
S C S O A
(non-repetitive pulse)
Reversed biased safe operating area
+V
GE
=15V, -V
GE
<15V, T
j
<125C, R
G
>4.7
Collector current : I
C
[A]
Collector-Emitter voltage : V
CE
[V]
0 5 10 15 20 25 30 35
1
10
100
C
res
C
oes
C
ies
Capacitance vs. Collector-Emitter voltage
T
j
=25C
Capacitance : C
ies
, C
oes
, C
res
[nF]
Collector-Emitter Voltage : V
CE
[V]
0 100 200 300 400
0
10
20
30
40
50
60
E
rr
25C
E
rr
125C
Switching loss vs. Collector current
V
CC
=600V, R
G
=4.7
, V
GE
=15V
Switching loss : E
on
,E
off
,E
rr
[mJ/cycle]
Collector Current : I
C
[A]
E
on
25C
E
on
125C
E
off
25C
E
off
125C
Fuji Electric GmbH Fuji Electric (UK) Ltd.
Lyoner Strae 26 Commonwealth House
2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0 Tel.: 0181 - 233 11 30
Fax.: 069 - 66 90 29 - 56 Fax.: 0181 - 233 11 60
P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com