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Электронный компонент: 2MBI300S-120

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2MBI300S-120
IGBT Module
1200V / 300A 2 in one-package
Features
High speed switching
Voltage drive
Low inductance module structure
Applications
Inverter for Motor drive
AC and DC Servo drive amplifier
Uninterruptible power supply
Industrial machines, such as Welding machines
Thermal resistance characteristics
Thermal resistance
0.05
0.10
0.0167
IGBT
Diode
the base to cooling fin
C/W
C/W
C/W
*
2
:
This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
G1 E1 G2 E2
C1
E2
C2E1
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Rth(j-c)
Rth(c-f)*
2
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25C unless otherwise specified)
Item Symbol
Collector-Emitter voltage
V
CES
Gate-Emitter voltaga
V
GES
Collector
Continuous Tc=25C IC
current
Tc=80C
1ms Tc=25C IC pulse
Tc=80C
-I
C
1ms
-I
C
pulse
Max. power dissipation
P
C
Operating temperature
T
j
Storage temperature
T
stg
Isolation voltage *
1
V
is
Screw torque
Mounting *
2
Terminals *
2
Rating
1200
20
400
300
800
600
300
600
2500
+150
-40 to +125
AC 2500 (1min. )
3.5
4.5
Unit
V
V
A
A
A
A
A
A
W
C
C
V
Nm
Nm
*
1 :
Aii terminals should be connected together when isolation test will be done
*
2 :
Recommendable value : Mounting 2.5 to 3.5 Nm(M5 or M6)
Terminals 3.5 to 4.5 Nm(M6)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
on
t
r
t
r(i)
t
off
t
f
V
F
t
rr
3.0
0.6
5.5
7.2
8.5
2.3
2.6
2.8
36000
7500
6600
0.35
1.2
0.25
0.6
0.1
0.45
1.0
0.08
0.3
2.3
3.0
2.0
0.35
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=20V
V
CE
=20V, I
C
=300mA
Tc=25 C V
GE
=15V, I
C
=300A
Tc=125C
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=300A
V
GE
=15V
R
G
=2.7 ohm
Tj=25C I
F
=300A, V
GE
=0V
Tj=125C
I
F
=300A
mA
A
V
V
pF
s
V
s
Electrical characteristics (at Tj=25C unless otherwise specified)
Symbol Characteristics Conditions Unit
Min. Typ. Max.
2MBI300S-120
IGBT Module
Characteristics (Representative)
0
1
2
3
4
5
0
100
200
300
400
500
600
700
8V
10V
12V
15V
VGE= 20V
Collector current vs. Collector-Emiiter voltage
Tj= 25C (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
0
1
2
3
4
5
0
100
200
300
400
500
600
700
8V
10V
12V
15V
VGE= 20V
Collector current vs. Collector-Emiiter voltage
Tj= 125C (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
0
1
2
3
4
5
0
100
200
300
400
500
600
700
Tj= 25C
Tj= 125C
Collector current vs. Collector-Emiiter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
5
10
15
20
25
0
2
4
6
8
10
Ic=150A
Ic= 300A
Ic= 600A
Collector-Emiiter voltage vs. Gate-Emitter voltage
Tj= 25C (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0
5
10
15
20
25
30
35
1000
5000
10000
100000
Capacitance vs. Collector-Emiiter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25C
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0
1000
2000
3000
0
200
400
600
800
1000
Dynamic Gate charge (typ.)
Vcc=600V, Ic=300A, Tj= 25C
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
2MBI300S-120
IGBT Module
0
100
200
300
400
500
50
100
500
1000
ton
tr
toff
tf
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=15V, Rg= 2.7ohm, Tj= 25C
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
0
100
200
300
400
500
50
100
500
1000
tf
tr
ton
toff
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=15V, Rg= 2.7ohm, Tj= 125C
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
1
10
50
50
100
500
1000
5000
toff
ton
tr
tf
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=300A, VGE=15V, Tj= 25C
Gate resistance : Rg [ohm]
Switching time : ton, tr, toff, tf [ nsec ]
0
200
400
600
0
20
40
60
80
Err(25C)
Eoff(25C)
Eon(25C)
Err(125C)
Eoff(125C)
Eon(125C)
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=15V, Rg=2.7ohm
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
1
10
50
0
40
80
120
160
200
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=300A, VGE=15V, Tj= 125C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [ohm]
Eon
Err
Eoff
0
200
400
600
800
1000
1200
1400
0
100
200
300
400
500
600
700
Reverse bias safe operating area
+VGE=15V, -VGE=<15V, Rg=>2.7ohm, Tj=<125C
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
2MBI300S-120
IGBT Module
Outline Drawings, mm
mass : 470g
0
1
2
3
4
0
100
200
300
400
500
600
700
Tj=25C
Tj=125C
Forward current vs. Forward on voltage (typ.)
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
0
100
200
300
400
500
10
100
500
Irr(125C)
Irr(25C)
trr(25C)
trr(125C)
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=15V, Rg=2.7ohm
Forward current : IF [ A ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.001
0.01
0.1
1
1E-3
0.01
0.05
0.1
0.5
Transient thermal resistance
Thermal resistanse : Rth(j-c) [ C/W ]
Pulse width : Pw [ sec ]
FWD
IGBT