1
Item
Symbol
Rating
Unit
Drain-source voltage
V
DS
60
Continuous drain current
I
D
20
Pulsed drain current
I
D(puls]
80
Continuous reverse drain current
I
DR
20
Gate-source peak voltage
V
GS
20
Max. power dissipation
P
D
35
Operating and storage
T
ch
+150
temperature range
T
stg
2SK1822-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25C unless otherwise specified)
V
A
A
A
V
W
C
C
-55 to +150
JEDEC
EIAJ
Outline Drawings
FAP-IIIA SERIES
Features
High current
Low on-resistance
No secondary breakdown
Low driving power
High forward Transconductance
Avalanche-proof
Including G-S Zener diode
Applications
Motor controllers
General purpose power amplifier
DC-DC converters
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermal characteristics
Item
Symbol
Test Conditions
Zero gate voltage drain current I
DSS
Min. Typ. Max. Units
V
V
A
mA
A
m
S
pF
ns
V
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-a)
channel to ambient
R
th(ch-c)
channel to case
62.5
3.57
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
(t
on
=t
d(on)
+t
r
)
Turn-off time t
off
(t
off
=t
d(off)
+t
f
)
Diode forward on-voltage
Reverse recovery time
Test Conditions
I
D
=1mA V
GS
=0V
I
D
=1mA V
DS
=V
GS
V
DS
=60V V
GS
=0V T
ch
=25C
T
ch
=125C
V
GS
=16V V
DS
=0V
I
D
=10A V
GS
=4V
I
D
=10A V
GS
=10V
I
D
=10A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V R
G
=25
I
D
=20A
V
GS
=10V
I
F
=2xI
DR
V
GS
=0V T
ch
=25C
I
F
=I
DR
di/dt=100A/
s T
ch
=25C
60
1.0
1.5
2.0
500
1.0
10
90
110
55
70
6.0
12.0
600
900
260
390
150
240
7
11
30
45
100
150
70
110
1.45
2.18
90
130
SC-67
TO-220F15
3. Source
2.54
Gate(G)
Source(S)
Drain(D)
2
Characteristics
2SK1822-01MR
FUJI POWER MOSFET
Typical output characteristics
V
DS
[ V ]
I
D
[ A ]
On state resistance vs. T
ch
R
DS(on)
[ m
]
T
ch
[ C ]
Typical transfer characteristics
V
GS
[ V ]
I
D
[ A ]
Typical Drain-Source on state resistance vs. I
D
I
D
[ A ]
R
DS(on)
[ m
]
Typical forward transconductance vs. I
D
I
D
[ A ]
gfs
[ S ]
Gate threshold voltage vs. T
ch
T
ch
[ C ]
V
GS(th)
[ V ]
0 5 10 15
0 10 20 30 40 50
3.0
2.0
1.0
0
15
10
5
0
40
30
20
10
0
-50 0 50 100 150
150
100
50
0
40
30
20
10
0
0 5 10 15
400
300
200
100
0
0 10 20 30 40
-50 0 50 100 150
3
FUJI POWER MOSFET
Typical capacitance vs. V
DS
V
DS
[ V ]
C
[nF]
Forward characteristics of reverse diode
0 0.8 1.6 2.4
V
SD
[ V ]
I
F
[ A ]
Allowable power dissipation vs. T
c
T
c
[ C ]
P
D
[ W ]
Transient thermal impedance
t
[ sec. ]
R
th
[C/W]
Safe operating area
I
D
[ A ]
V
DS
[ V ]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
50
10
5
1
0.5
0 50 100 150
100
50
10
5
1
2SK1822-01MR
Typical input charge
V
DS
[ V ]
Qg
[ nC ]
V
GS
[ V ]
25
20
15
10
5
0
10
5
1
0.5
0.1
0.05
0 10 20 30
0 20 40 60 80 100
50
40
30
20
10
0
40
30
20
10
0
10
0
10
-1
10
-2
0.5 1 5 10 50 100
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