2SK2003-01MR
N-channel MOS-FET
FAP-IIA Series
600V
2,4
4A
40W
> Features
> Outline Drawing
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
V
GS
= 30V Guarantee
-
Avalanche Proof
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
-
Absolute Maximum Ratings (T
C
=25C),
unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V
DS
600
V
Drain-Gate-Voltage(R
GS
=20K
)
V
DGR
600
V
Continous Drain Current
I
D
4
A
Pulsed Drain Current
I
D(puls)
16
A
Gate-Source-Voltage
V
GS
30
V
Max. Power Dissipation
P
D
40
W
Operating and Storage Temperature Range
T
ch
150
C
T
stg
-55 ~ +150
C
-
Electrical Characteristics (T
C
=25C),
unless otherwise specified
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown-Voltage
V
(BR)DSS
I
D
=1mA
V
GS
=0V
600
V
Gate Threshhold Voltage
V
GS(th)
I
D
=1mA
V
DS=
V
GS
2,5
3,0
3,5
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=600V
T
ch
=25C
10
500
A
V
GS
=0V
T
ch
=125C
0,2
1,0
mA
Gate Source Leakage Current
I
GSS
V
GS
=30V
V
DS
=0V
10
100
nA
Drain Source On-State Resistance
R
DS(on)
I
D
=2A
V
GS
=10V
2
2,4
Forward Transconductance
g
fs
I
D
=2A
V
DS
=25V
2
4
S
Input Capacitance
C
iss
V
DS
=25V
1000
1500
pF
Output Capacitance
C
oss
V
GS
=0V
85
130
pF
Reverse Transfer Capacitance
C
rss
f=1MHz
20
30
pF
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
t
d(on)
V
CC
=300V
20
30
ns
t
r
I
D
=4A
15
25
ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
t
d(off)
V
GS
=10V
45
70
ns
t
f
R
GS
=10
15
25
ns
Avalanche Capability
I
AV
L=100H T
ch
=25C
4
A
Continous Reverse Drain Current
I
DR
4
A
Pulsed Reverse Drain Current
I
DRM
16
A
Diode Forward On-Voltage
V
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25C
1,1
1,65
V
Reverse Recovery Time
t
rr
I
F
=I
DR
V
GS
=0V
400
ns
Reverse Recovery Charge
Q
rr
-dI
F
/dt=100A/s T
ch
=25C
2
C
-
Thermal Characteristics
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Thermal Resistance
R
th(ch-a)
channel to air
62,5
C/W
R
th(ch-c)
channel to case
3,125
C/W
FUJI ELECTRIC GmbH; Lyoner Strae 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
N-channel MOS-FET
2SK2003-01MR
600V
2,4
4A
40W
FAP-IIA Series
> Characteristics
Typical Output Characteristics
Drain-Source-On-State Resistance vs. T
ch
Typical Transfer Characteristics
1
2
3
I
D
[A]
R
DS(ON)
[
]
I
D
[A]
V
DS
[V]
T
ch
[C]
V
GS
[V]
Typical Drain-Source-On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
4
5
6
R
DS(ON)
[
]
g
fs
[S]
V
GS(th)
[V]
I
D
[A]
I
D
[A]
T
ch
[C]
Typical Capacitance vs. V
DS
Typical Input Charge
Forward Characteristics of Reverse Diode
7
8
9
C [nF]
V
DS
[V]
V
GS
[V]
I
F
[A]
V
DS
[V]
Q
g
[nC]
V
SD
[V]
Allowable Power Dissipation vs. T
C
Safe operation area
Z
th(ch-c)
[K/W]
Transient Thermal impedance
10
12
11
P
D
[W]
I
D
[A]
T
c
[C]
V
DS
[V]
t [s]
This specification is subject to change without notice!
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