1
Item
Symbol
Rating
Unit
Drain-source voltage
V
DS
1000
Continuous drain current
I
D
4
Pulsed drain current
I
D(puls]
16
Continuous reverse drain current
I
DR
4
Gate-source peak voltage
V
GS
30
Max. power dissipation
P
D
80
Operating and storage
T
ch
+150
temperature range
T
stg
2SK2004-01L,S
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25C unless otherwise specified)
V
A
A
A
V
W
C
C
-55 to +150
Outline Drawings
FAP-IIA SERIES
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
V
GS
=30V Guarantee
Avalanche-proof
Applications
Switching regulators
UPS
DC-DC converters
General purpose power amplifier
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermal characteristics
Item
Symbol
Test Conditions
Zero gate voltage drain current I
DSS
Min. Typ. Max. Units
V
V
A
mA
nA
S
pF
ns
A
V
ns
C
Min. Typ. Max. Units
Thermal resistance
R
th(ch-a)
channel to ambient
R
th(ch-c)
channel to case
125
1.56
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
(t
on
=t
d(on)
+t
r
)
Turn-off time t
off
(t
off
=t
d(off)
+t
f
)
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=1mA V
GS
=0V
I
D
=1mA V
DS
=V
GS
V
DS
=1000V V
GS
=0V T
ch
=25C
T
ch
=125C
V
GS
=30V V
DS
=0V
I
D
=2A V
GS
=10V
I
D
=2A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=600V R
G
=10
I
D
=4A
V
GS
=10V
L=100H T
ch
=25C
I
F
=2xI
DR
V
GS
=0V T
ch
=25C
I
F
=I
DR
V
GS
=0V
-di/dt=100A/
s T
ch
=25C
1000
2.5
3.0
3.5
10
500
0.2
1.0
10
100
2.7
3.6
2.0
5.0
1300
1950
100
150
35
55
20
30
15
25
85
130
20
30
4
1.1
1.65
400
3
Gate(G)
Source(S)
Drain(D)
EIAJ
0.5
0.3
0.3
0.2
0.2
+0.2
--0.1
4.5
1.32
2.7
5.08
1.2
10
0.4
0.8
0.9
9.3
1.5
3.0
1. Gate
2, 4. Drain
3. Source
+0.5
+0.2
Max
L-type
S-type
1:Gate
2:Drain
3:Source
2
Characteristics
2SK2004-01L,S
FUJI POWER MOSFET
Typical output characteristics
V
DS
[ V ]
I
D
[ A ]
On state resistance vs. T
ch
R
DS(on)
[
]
T
ch
[ C ]
Typical transfer characteristics
V
GS
[ V ]
I
D
[ A ]
Typical Drain-Source on state resistance vs. I
D
I
D
[ A ]
R
DS(on)
[
]
Typical forward transconductance vs. I
D
I
D
[ A ]
gfs
[ S ]
Gate threshold voltage vs. T
ch
T
ch
[ C ]
V
GS(th)
[ V ]
0 2 4 6 8 10 12
0 10 20 30
-50 0 50 100 150
-50 0 50 100 150
8
6
4
2
0
10
8
6
4
2
0
0 2 4 6 8 10
0 2 4 6 8 10
10
8
6
4
2
0
5.0
4.0
3.0
2.0
1.0
0
8
6
4
2
0
12
10
8
6
4
2
0
3
FUJI POWER MOSFET
Typical capacitance vs. V
DS
V
DS
[ V ]
C
[nF]
Forward characteristics of reverse diode
V
SD
[ V ]
I
F
[ A ]
Allowable power dissipation vs. T
c
T
c
[ C ]
P
D
[ W ]
Transient thermal impedance
t
[ sec. ]
R
th
[C/W]
Safe operating area
I
D
[ A ]
V
DS
[ V ]
Typical input charge
V
DS
[ V ]
Qg
[ nC ]
V
GS
[ V ]
2SK2004-01L,S
10
0
10
-1
10
-2
20
10
0
0 0.5 1.0 1.5
0 10 20 30 40
10
1
10
0
10
-1
10
-2
10
-3
0 20 40 60 80
800
400
0
10
2
10
1
10
0
10
-1
10
-2
0 50 100 150
100
80
60
40
20
0
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
1
10
2
10
3
10
4
10
2
10
1
10
0
10
-1
10
-2
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