2SK2004-01L,S
N-channel MOS-FET
FAP-IIA Series
1000V
3,6
4A 80W
> Features > Outline Drawing
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
V
GS
= 30V Guarantee
-
Avalanche Proof
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics > Equivalent Circuit
-
Absolute Maximum Ratings (T
C
=25C),
unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
DS
1000 V
Drain-Gate-Voltage (R
GS
=20K
) V
DGR
1000 V
Continous Drain Current I
D
4 A
Pulsed Drain Current I
D(puls)
16 A
Gate-Source-Voltage V
GS
30 V
Max. Power Dissipation P
D
80 W
Operating and Storage Temperature Range T
ch
150 C
T
stg
-55 ~ +150 C
-
Electrical Characteristics (T
C
=25C),
unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
(BR)DSS
I
D
=1mA V
GS
=0V 1000 V
Gate Threshhold Voltage V
GS(th)
I
D
=1mA V
DS=
V
GS
2,5 3,0 3,5 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=1000V T
ch
=25C 10 500 A
V
GS
=0V T
ch
=125C 0,2 1,0 mA
Gate Source Leakage Current I
GSS
V
GS
=30V V
DS
=0V 10 100 nA
Drain Source On-State Resistance R
DS(on)
I
D
=2A V
GS
=10V 2,7 3,6
Forward Transconductance g
fs
I
D
=2A V
DS
=25V 2 5 S
Input Capacitance C
iss
V
DS
=25V 1300 1950 pF
Output Capacitance C
oss
V
GS
=0V 100 150 pF
Reverse Transfer Capacitance C
rss
f=1MHz 35 55 pF
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
) t
d(on)
V
CC
=600V 20 30 ns
t
r
I
D
=4A 15 25 ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
) t
d(off)
V
GS
=10V 85 130 ns
t
f
R
GS
=10
20 30 ns
Avalanche Capability I
AV
L = 100H T
ch
=25C 4 A
Continous Reverse Drain Current I
DR
4 A
Pulsed Reverse Drain Current I
DRM
16 A
Diode Forward On-Voltage V
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25C 1,1 1,65 V
Reverse Recovery Time t
rr
I
F
=I
DR
V
GS
=0V 400 ns
Reverse Recovery Charge Q
rr
-dI
F
/dt=100A/s T
ch
=25C 3 C
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
th(ch-a)
channel to air 125 C/W
R
th(ch-c)
channel to case 1,56 C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
N-channel MOS-FET
2SK2004-01L,S
1000V
3,6
4A
80W
FAP-IIA Series
> Characteristics
Typical Output Characteristics
Drain-Source-On-State Resistance vs. T
ch
Typical Transfer Characteristics
1
2
3
I
D
[A]
R
DS(ON)
[
]
I
D
[A]
V
DS
[V]
T
ch
[C]
V
GS
[V]
Typical Drain-Source-On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
4
5
6
R
DS(ON)
[
]
g
fs
[S]
V
GS(th)
[V]
I
D
[A]
I
D
[A]
T
ch
[C]
Typical Capacitance vs. V
DS
Typical Input Charge
Forward Characteristics of Reverse Diode
7
8
9
C [nF]
V
DS
[V]
V
GS
[V]
I
F
[A]
V
DS
[V]
Q
g
[nC]
V
SD
[V]
Allowable Power Dissipation vs. T
C
Safe operation area
Z
th(ch-c)
[K/W]
Transient Thermal impedance
10
12
11
P
D
[W]
I
D
[A]
T
c
[C]
V
DS
[V]
t [s]
This specification is subject to change without notice!
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