1
Item
Symbol
Rating
Unit
Drain-source voltage
V
DS
60
Continuous drain current
I
D
10
Pulsed drain current
I
D(puls]
40
Continuous reverse drain current
I
DR
10
Gate-source peak voltage
V
GS
20
Max. power dissipation
P
D
20
Operating and storage
T
ch
+150
temperature range
T
stg
2SK2018-01L,S
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless otherwise specified)
V
A
A
A
V
W
C
C
-55 to +150
Outline Drawings
FAP-III SERIES
Features
High current
Low on-resistance
No secondary breakdown
Low driving power
High forward Transconductance
Avalanche-proof
Applications
Motor controllers
General purpose power amplifier
DC-DC converters
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermal characteristics
Item
Symbol
Test Conditions
Zero gate voltage drain current I
DSS
Min. Typ. Max. Units
V
V
A
mA
nA
S
pF
ns
A
V
ns
C
Min. Typ. Max. Units
Thermal resistance
R
th(ch-a)
channel to ambient
R
th(ch-c)
channel to case
6.25
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
(t
on
=t
d(on)
+t
r
)
Turn-off time t
off
(t
off
=t
d(off)
+t
f
)
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=1mA V
GS
=0V
I
D
=1mA V
DS
=V
GS
V
DS
=60V V
GS
=0V T
ch
=25C
T
ch
=125C
V
GS
=20V V
DS
=0V
I
D
=5A V
GS
=4V
I
D
=5A V
GS
=10V
I
D
=5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V R
G
=25
I
D
=5A
V
GS
=10V
L=100H T
ch
=25C
I
F
=2xI
DR
V
GS
=0V T
ch
=25C
I
F
=I
DR
V
GS
=0V
-di/dt=100A/
s T
ch
=25C
60
1.0
1.5
2.5
10
500
0.2
1.0
10
100
0.110
0.160
0.070
0.100
4.0
8.0
500
750
200
300
80
120
10
15
20
30
100
150
50
75
10
1.2
100
0.15
Gate(G)
Source(S)
Drain(D)
K-Pack(L)
K-Pack(S)
1. Gate
2, 4. Drain
3. Source
0.9
0.2
0.5
0.2
0.2
+0.2 --0.1
5.5
6.5
4.6
1.0
5
2.5
.9
+0.2
--0.1
1.5
1. Gate
2, 4. Drain
3. Source
0
00
0
0
L-type
S-type
EIAJ
2
Characteristics
2SK2018-01L,S
FUJI POWER MOSFET
Typical output characteristics
V
DS
[ V ]
I
D
[ A ]
On state resistance vs. T
ch
R
DS(on)
[
]
T
ch
[ C ]
Typical transfer characteristics
V
GS
[ V ]
I
D
[ A ]
Typical Drain-Source on state resistance vs. I
D
I
D
[ A ]
R
DS(on)
[
]
Typical forward transconductance vs. I
D
I
D
[ A ]
gfs
[ S ]
Gate threshold voltage vs. T
ch
T
ch
[ C ]
V
GS(th)
[ V ]
0 1 2 3
-50 0 50 100 150
-50 0 50 100 150
0.30
0.20
0.10
0
0 1 2 3 4 5 6 7
0 2 4 6 8 10
0 2 4 6 8 10 12
1.2
1.0
0.8
0.6
0.4
0.2
0
10
8
6
4
2
0
4.0
3.0
2.0
1.0
0
10
8
6
4
2
0
10
8
6
4
2
0
3
FUJI POWER MOSFET
Typical capacitance vs. V
DS
V
DS
[ V ]
C
[nF]
Forward characteristics of reverse diode
V
SD
[ V ]
I
F
[ A ]
Allowable power dissipation vs. T
c
T
c
[ C ]
P
D
[ W ]
Transient thermal impedance
t
[ sec. ]
R
th
[C/W]
Safe operating area
I
D
[ A ]
V
DS
[ V ]
Typical input charge
V
DS
[ V ]
Qg
[ nC ]
V
GS
[ V ]
2SK2018-01L,S
28
24
20
16
12
8
4
0
0 0.5 1.0 1.5 2.0
0 10 20 30 40 50
10
2
10
1
10
0
10
-1
0 50 100 150
10
-1
10
0
10
1
10
2
0 10 20 30
10
1
10
0
10
-1
10
-2
60
40
20
0
24
20
16
12
8
4
0
10
1
10
0
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
1
10
0
10
-1
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