2SK2639-01
N-channel MOS-FET
FAP-IIS Series
450V
0,65
10A 100W
> Features > Outline Drawing
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
V
GS
= 30V Guarantee
-
Repetitive Avalanche Rated
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics > Equivalent Circuit
-
Absolute Maximum Ratings (
T
C
=25C),
unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage
V
DS
450 V
Continous Drain Current
I
D
10 A
Pulsed Drain Current
I
D(puls)
40 A
Gate-Source-Voltage
V
GS
35 V
Repetitive or Non-Repetitive (Tc
h
150C) I
AR
10 A
Avalanche Energy
E
AS
255 mJ
Max. Power Dissipation
P
D
100 W
Operating and Storage Temperature Range
T
ch
150 C
T
stg
-55 ~ +150 C
-
Electrical Characteristics (T
C
=25C),
unless otherwise specified
Item Symbol Test conditions
Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage
V
(BR)DSS
I
D
=1mA V
GS
=0V 450 V
Gate Threshhold Voltage
V
GS(th)
I
D
=1mA V
DS=
V
GS
3,5 4,0 4,5 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=450V T
ch
=25C 10 500 A
V
GS
=0V T
ch
=125C 0,2 1,0 mA
Gate Source Leakage Current
I
GSS
V
GS
=35V V
DS
=0V 10 100 nA
Drain Source On-State Resistance
R
DS(on)
I
D
=5A V
GS
=10V 0,58 0,65
Forward Transconductance
g
fs
I
D
=5A V
DS
=25V 3 6 S
Input Capacitance
C
iss
V
DS
=25V 950 1450 pF
Output Capacitance
C
oss
V
GS
=0V 180 270 pF
Reverse Transfer Capacitance
C
rss
f=1MHz 80 120 pF
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
) t
d(on)
V
CC
=300V 25 40 ns
t
r
I
D
=10A 70 110 ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
) t
d(off)
V
GS
=10V 70 110 ns
t
f
R
GS
=10
50 80 ns
Avalanche Capability
I
AV
L = 100H T
ch
=25C 10 A
Diode Forward On-Voltage
V
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25C 1,1 1,65 V
Reverse Recovery Time
t
rr
I
F
=I
DR
V
GS
=0V 400 ns
Reverse Recovery Charge
Q
rr
-dI
F
/dt=100A/s T
ch
=25C 5,0 C
- Thermal Characteristics
Item Symbol Test conditions
Min. Typ. Max. Unit
Thermal Resistance
R
th(ch-a)
channel to air
35 C/W
R
th(ch-c)
channel to case
1,25 C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
N-channel MOS-FET
2SK2639-01
450V
0,65
10A
100W
FAP-IIS Series
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance vs. T
ch
Typical Transfer Characteristics
I
D
=f(V
DS
); 80s pulse test; T
C
=25C
R
DS(on)
= f(T
ch
); I
D
=5A; V
GS
=10V
I
D
=f(V
GS
); 80s pulse test; V
DS
=25V; T
ch
=25C
I
D
[A]
1
R
DS(ON)
[
]
2
I
D
[A]
3
V
DS
[V]
T
ch
[C]
V
GS
[V]
Typical Drain-Source On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
R
DS(on)
=f(I
D
); 80s pulse test; T
C
=25C
g
fs
=f(I
D
); 80s pulse test; V
DS
=25V; T
ch
=25C
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
R
DS(ON)
[
]
4
g
fs
[S]
5
V
GS(th)
[V]
6
I
D
[A]
I
D
[A]
T
ch
[C]
Typical Capacitances vs. V
DS
Typical Gate Charge Characteristic
Forward Characteristics of Reverse Diode
C=f(V
DS
); V
GS
=0V; f=1MHz
V
GS
=f(Qg); I
D
=10A; Tc=25C
I
F
=f(V
SD
); 80s pulse test; V
GS
=0V
C [F]
7
V
DS
[V]
8
V
GS
[V]
I
F
[A]
9
V
DS
[V]
Qg [nC]
V
SD
[V]
Avalanche Energy Derating
Safe Operation Area
E
as
=f(starting T
ch
); V
CC
=45V; I
AV
=10A
I
D
=f(V
DS
): D=0,01, Tc=25C
Z
th(ch-c)
[K/W]
Transient Thermal impedance
10
12
Z
thch
=f(t) parameter:D=t/T
Eas [mJ]
I
D
[A]
Starting T
ch
[C]
V
DS
[V]
t [s]
This specification is subject to change without notice!
PDF 
ZIP