2SK2760-01
N-channel MOS-FET
FAP-IIS Series
600V
1,2
9A
60W
> Features
> Outline Drawing
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
V
GS
= 30V Guarantee
-
Repetitive Avalanche Rated
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
-
Absolute Maximum Ratings (T
C
=25C),
unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V
DS
600
V
Continous Drain Current
I
D
9
A
Pulsed Drain Current
I
D(puls)
32
A
Gate-Source-Voltage
V
GS
30
V
Repetitive or Non-Repetitive (T
ch
150C)
I
AR
9
A
Avalanche Energy
E
AS
117,6
mJ
Max. Power Dissipation
P
D
60
W
Operating and Storage Temperature Range
T
ch
150
C
T
stg
-55 ~ +150
C
-
Electrical Characteristics (T
C
=25C),
unless otherwise specified
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown-Voltage
V
(BR)DSS
I
D
=1mA
V
GS
=0V
600
V
Gate Threshhold Voltage
V
GS(th)
I
D
=1mA
V
DS=
V
GS
3,5
4,0
4,5
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=600V
T
ch
=25C
10
500
A
V
GS
=0V
T
ch
=125C
0,2
1,0
mA
Gate Source Leakage Current
I
GSS
V
GS
=30V
V
DS
=0V
10
100
nA
Drain Source On-State Resistance
R
DS(on)
I
D
=4A
V
GS
=10V
1,0
1,2
Forward Transconductance
g
fs
I
D
=4A
V
DS
=25V
2,5
5
S
Input Capacitance
C
iss
V
DS
=25V
900
1400
pF
Output Capacitance
C
oss
V
GS
=0V
150
230
pF
Reverse Transfer Capacitance
C
rss
f=1MHz
70
110
pF
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
t
d(on)
V
CC
=300V
25
40
ns
t
r
I
D
=9A
70
110
ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
t
d(off)
V
GS
=10V
60
90
ns
t
f
R
GS
=10
35
60
ns
Avalanche Capability
I
AV
L = 100H
T
ch
=25C
9
A
Diode Forward On-Voltage
V
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25C
1,0
1,50
V
Reverse Recovery Time
t
rr
I
F
=I
DR
V
GS
=0V
550
ns
Reverse Recovery Charge
Q
rr
-dI
F
/dt=100A/s T
ch
=25C
7,0
C
-
Thermal Characteristics
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Thermal Resistance
R
th(ch-a)
channel to air
30
C/W
R
th(ch-c)
channel to case
2,08
C/W
FUJI ELECTRIC GmbH; Lyoner Strae 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
N-channel MOS-FET
2SK2760-01
600V
1,2
9A
60W
FAP-IIS Series
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance vs. T
ch
Typical Transfer Characteristics
I
D
=f(V
DS
); 80s pulse test; T
C
=25C
R
DS(on)
= f(T
ch
); I
D
=4A; V
GS
=10V
I
D
=f(V
GS
); 80s pulse test; V
DS
=25V; T
ch
=25C
I
D
[A]
1
R
DS(ON)
[
]
2
I
D
[A]
3
V
DS
[V]
T
ch
[C]
V
GS
[V]
Typical Drain-Source On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
R
DS(on)
=f(I
D
); 80s pulse test; T
C
=25C
g
fs
=f(I
D
); 80s pulse test; V
DS
=25V; T
ch
=25C
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
R
DS(ON)
[
]
4
g
fs
[S]
5
V
GS(th)
[V]
6
I
D
[A]
I
D
[A]
T
ch
[C]
Typical Capacitances vs. V
DS
Typical Gate Charge Characteristic
Forward Characteristics of Reverse Diode
C=f(V
DS
); V
GS
=0V; f=1MHz
V
GS
=f(Qg); I
D
=9A; Tc=25C
I
F
=f(V
SD
); 80s pulse test; V
GS
=0V
C [F]
7
V
DS
[V]
8
V
GS
[V]
I
F
[A]
9
V
DS
[V]
Qg [nC]
V
SD
[V]
Avalanche Energy Derating
Safe Operation Area
E
as
=f(starting T
ch
); V
CC
=60V; I
AV
=9A
I
D
=f(V
DS
): D=0,01, Tc=25C
Z
th(ch-c)
[K/W]
Transient Thermal impedance
10
12
Z
thch
=f(t) parameter:D=t/T
Eas [mJ]
I
D
[A]
Starting T
ch
[C]
V
DS
[V]
t [s]
This specification is subject to change without notice!
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