2SK2806-01
N-channel MOS-FET
FAP-IIIB Series
30V
0,02
35A 30W
> Features > Outline Drawing
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
Avalanche Rated
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics > Equivalent Circuit
-
Absolute Maximum Ratings (T
C
=25C),
unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
DS
30 V
Continous Drain Current I
D
35 A
Pulsed Drain Current I
D(puls)
140 A
Gate-Source-Voltage V
GS
16 V
Maximum Avalanche Energy E
AV
129,3 mJ*
Max. Power Dissipation P
D
30 W
Operating and Storage Temperature Range T
ch
150 C
T
stg
-55 ~ +150 C
* L=0,07mH, V
CC
=12V
-
Electrical Characteristics (T
C
=25C),
unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
(BR)DSS
I
D
=1mA V
GS
=0V 30 V
Gate Threshhold Voltage V
GS(th)
I
D
=1mA V
DS=
V
GS
1,0 1,5 2,0 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=30V T
ch
=25C 10 500 A
V
GS
=0V T
ch
=125C 0,2 1,0 mA
Gate Source Leakage Current I
GSS
V
GS
=16V V
DS
=0V 10 100 nA
Drain Source On-State Resistance R
DS(on)
I
D
=17,5A V
GS
=4V 0,022 0,03
V
GS
=10V 0,014 0,02
Forward Transconductance g
fs
I
D
=17,5A V
DS
=25V 16 33 S
Input Capacitance C
iss
V
DS
=25V 1100 1650 pF
Output Capacitance C
oss
V
GS
=0V 550 830 pF
Reverse Transfer Capacitance C
rss
f=1MHz 240 360 pF
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
) t
d(on)
V
CC
=15V 9 15 ns
t
r
I
D
=35A 15 23 ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
) t
d(off)
V
GS
=10V 75 115 ns
t
f
R
GS
=10
50 75 ns
Avalanche Capability I
AV
L = 100H T
ch
=25C 35 A
Diode Forward On-Voltage V
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25C 0,98 1,71 V
Reverse Recovery Time t
rr
I
F
=2xI
DR
V
GS
=0V 50 ns
Reverse Recovery Charge Q
rr
-dI
F
/dt=100A/s T
ch
=25C 0,08 C
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
th(ch-a)
channel to air 75 C/W
R
th(ch-c)
channel to case 4,16 C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
N-channel MOS-FET
2SK2806-01
30V
0,02
35A
30W
FAP-IIIB Series
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance vs. T
ch
Typical Transfer Characteristics
I
D
=f(V
DS
); 80s pulse test; T
C
=25C
R
DS(on)
= f(T
ch
); I
D
=17,5A; V
GS
=10V
I
D
=f(V
GS
); 80s pulse test; V
DS
=25V; T
ch
=25C
I
D
[A]
1
R
DS(ON)
[m
]
2
I
D
[A]
3
V
DS
[V]
T
ch
[C]
V
GS
[V]
Typical Drain-Source On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
R
DS(on)
=f(I
D
); 80s pulse test; T
C
=25C
g
fs
=f(I
D
); 80s pulse test; V
DS
=25V; T
ch
=25C
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
R
DS(ON)
[m
]
4
g
fs
[S]
5
V
GS(th)
[V]
6
I
D
[A]
I
D
[A]
T
ch
[C]
Typical Capacitances vs. V
DS
Typical Gate Charge Characteristic
Forward Characteristics of Reverse Diode
C=f(V
DS
); V
GS
=0V; f=1MHz
V
GS
=f(Qg); I
D
=35A; T
C
=25C
I
F
=f(V
SD
); 80s pulse test; T
ch
=25C
C [F]
7
V
DS
[V]
8
V
GS
[V]
I
F
[A]
9
V
DS
[V]
Qg [nC]
V
SD
[V]
Maximum Avalanche Energy vs. starting T
ch
Safe Operation Area
E
AV
=f(starting T
ch
): V
CC
=12V; I
AV
35A
I
D
=f(V
DS
): D=0,01, Tc=25C
Z
th(ch-c)
[K/W]
Transient Thermal impedance
10
12
Z
thch
=f(t) parameter:D=t/T
E
AV
[mJ]
I
D
[A]
starting T
ch
[C]
V
DS
[V]
t [s]
This specification is subject to change without notice!
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