1
Item
Symbol
Rating
Unit
Drain-source voltage
V
DS
60
Continuous drain current
I
D
100
Pulsed drain current
I
D(puls]
400
Gate-source voltage
V
GS
30
Maximum Avalanche Energy
E
AV *1
1268.3
Max. power dissipation
P
D
125
Operating and storage
T
ch
+150
temperature range
T
stg
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermalcharacteristics
2SK2907-01R
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item
Symbol Test Conditions
Zero gate voltage drain current I
DSS
V
DS
=60V
V
GS
=30V
I
D
=50A V
GS
=10V
I
D
=50A V
DS
=25V
V
CC
=30V I
D
=100A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
mA
nA
m
S
pF
A
V
ns
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
1.0
30.0
C/W
C/W
Symbol
BV
DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=1mA V
GS
=0V
I
D
=10mA V
DS
=V
GS
T
ch
=25C
V
GS
=0V T
ch
=125C
V
DS
=0V
V
DS
=25V
V
GS
=0V
f=1MHz
L=100 H T
ch
=25C
I
F
=100A V
GS
=0V T
ch
=25C
I
F
=50A V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
A
A
V
mJ
W
C
C
*1 L=0.169mH, Vcc=24V
60
2.5
3.0
3.5
10
500
0.2
1.0
10
100
5.7
7.8
25
55
5400
8100
2100
3150
550
830
29
50
200
350
160
240
150
230
100
1.0
1.5
85
0.21
-55 to +150
TO-3PF
1. Gate
2. Drain
3. Source
20 Min
15.5
5.5
9.3
5.45
5.45
5.5
3.2
21.5
1.6
3.5
1.1
2.1
2.3
0.6
0.2
0.2
0.3
0.3
0.3
0.3
0.2
0.2
0.2
0.3
0.3
+0.2
+0.3
+0.2
--0.1
0.2
3.2
2
Characteristics
2SK2907-01R
FUJI POWER MOSFET
0
50
100
150
0
25
50
75
100
125
150
Power Dissipation
PD=f(Tc)
PD [W]
Tc [C]
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
ID [A]
VDS [V]
Safe operating area
ID=f(VDS):D=0.01,Tc=25C
t=
1s
10s
1ms
10ms
100ms
100s
D.C.
t
T
D=
t
T
0
1
2
3
4
5
0
50
100
150
200
6.0V
5.5V
4.0V
3.5V
4.5V
10V
8V
5.0V
VGS=20V
Typical output characteristics
ID=f(VDS):80s pulse test,Tc=25C
ID [A]
VDS [V]
0
2
4
6
8
10
0.1
1
10
100
Typical transfer characteristics
ID=f(VGS):80s pulse test,VDS=25V,Tch=25C
ID [A]
VGS [V]
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
Typical forward transconductance
gfs=f(ID):80s pulse test,VDS=25V,Tch=25C
gfs [s]
ID [A]
0
50
100
150
200
0
10
20
30
40
50
6V
RDS(on) [m
]
ID [A]
Typical Drain-Source on-State Resistance
RDS(on)=f(ID):80s pulse test,Tch=25C
8V
10V
20V
4.5V
5.0V
4.0V
VGS=
3.5V
5.5V
3
2SK2907-01R
FUJI POWER MOSFET
-50
0
50
100
150
0
5
10
15
20
max.
typ.
Drain-source on-state resistance
RDS(on)=f(Tch):ID=50A,VGS=10V
RDS(on)[m
]
Tch [C]
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS(th) [V]
Tch [C]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=10mA
min.
typ.
max.
10
-2
10
-1
10
0
10
1
10
2
100p
1n
10n
100n
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
C [F]
VDS [V]
Ciss
Coss
Crss
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
20
40
60
80
100
120
140
160
180
200
220
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80s pulse test,Tch=25C
10V
5V
VGS=0V
IF [A]
VSD [V]
0
50
100
150
200
250
300
0
5
10
15
20
25
12V
30V
Vcc=48V
Typical Gate Charge Characteristics
VGS=f(Qg):ID=100A,Tch=25C
0
10
20
30
40
50
VDS [V]
VGS [V]
Qg [nC]
VGS
VDS
10
-1
10
0
10
1
10
2
10
1
10
2
10
3
10
4
t [ns]
ID [A]
td(off)
tf
tr
td(on)
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=30V,VGS=10V,RG=10
4
2SK2907-01R
FUJI POWER MOSFET
0
50
100
150
0
20
40
60
80
100
120
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch)
I(AV) [A]
Starting Tch [C]
0
50
100
150
0
250
500
750
1000
1250
1500
Maximum Avalanche energy vs. starting Tch
Eas=f(starting Tch):Vcc=24V, I(AV)<=100A
Eas [mJ]
Starting Tch [C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
0.5
0.2
0.02
0.05
0.1
0.01
0
Transient thermal impedande
Zthch=f(t) parameter:D=t/T
Zthch-c [K/W]
t [s]
t
T
D=
t
T
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