1
Item
Symbol
Rating
Unit
Drain-source voltage
V
DS
150
Continuous drain current
I
D
40
Pulsed drain current
I
D(puls]
160
Gate-source voltage
V
GS
30
Maximum Avalanche Energy
E
AV *1
387
Max. power dissipation Ta=25C
P
D
1.67
Tc=25C
P
D
135
Operating and storage
T
ch
+150
temperature range
T
stg
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermalcharacteristics
2SK3218-01
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item
Symbol Test Conditions
Zero gate voltage drain current I
DSS
V
DS
=150V
V
GS
=30V
I
D
=20A V
GS
=10V
I
D
=20A V
DS
=25V
V
CC
=48V I
D
=40A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
mA
nA
m
S
pF
A
V
ns
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
0.93
75.0
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=1mA V
GS
=0V
I
D
=1mA V
DS
=V
GS
Tch=25C
V
GS
=0V Tch=125C
V
DS
=0V
V
DS
=25V
V
GS
=0V
f=1MHz
L=100H T
ch
=25C
I
F
=40A V
GS
=0V T
ch
=25C
I
F
=40A V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
A
A
V
mJ
W
W
C
C
*1 L=420H, Vcc=24V
150
2.5
3.0
3.5
1
100
0.1
0.5
10
100
37
43
12.5
25.0
2650
3980
550
830
240
360
21
32
95
142
115
173
60
90
40
0.97
1.46
180
1.30
-55 to +150
TO-220AB
3. Source
2
0
2
4
6
8
10
0.1
1
10
100
Typical transfer characteristics
ID=f(VGS):80s pulse test,VDS=25V,Tch=25C
ID [A]
VGS [V]
Characteristics
2SK3218-01
FUJI POWER MOSFET
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Power Dissipation
PD=f(Tc)
PD [W]
Tc [C]
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10
3
ID [A]
VDS [V]
Safe operating area
ID=f(VDS):Single Pulse(D=0),Tc=25C
t=
1s
10s
1ms
10ms
100ms
100s
D.C.
0
1
2
3
4
5
0
20
40
60
80
100
15V
6.0V
5.5V
6.5V
4.5V
10V
7.0V
5.0V
VGS=20V
Typical output characteristics
ID=f(VDS):80s pulse test,Tc=25C
ID [A]
VDS [V]
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
Typical forward transconductance
gfs=f(ID):80s pulse test,VDS=25V,Tch=25C
gfs [s]
ID [A]
0
20
40
60
80
100
120
0.00
0.02
0.04
0.06
0.08
0.10
0.12
7.0V
RDS(on) [
]
ID [A]
Typical Drain-Source on-State Resistance
RDS(on)=f(ID):80s pulse test,Tch=25C
10V
15V
20V
5.5V
6.0V
5.0V
VGS=
4.5V
6.5V
t
T
D=
t
T
3
2SK3218-01
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100
120
max.
typ.
Drain-source on-state resistance
RDS(on)=f(Tch):ID=20A,VGS=10V
RDS(on)[m
]
Tch [C]
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS(th) [V]
Tch [C]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
min.
typ.
max.
10
-2
10
-1
10
0
10
1
10
2
100p
1n
10n
100n
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
C [F]
VDS [V]
Ciss
Coss
Crss
0
20
40
60
80
100
120
140
160
180
200
0
5
10
15
20
25
30
30V
75V
Vcc=120V
Typical Gate Charge Characteristics
VGS=f(Qg):ID=40A,Tch=25C
0
25
50
75
100
125
150
VDS [V]
VGS [V]
Qg [nC]
VGS
VDS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
10
20
30
40
50
60
70
80
90
100
Typical Forward Characteristics of Reverse Diode
-ID=f(VSD):80s pulse test,Tch=25C
10V
5V
VGS=0V
-ID [A]
VSD [V]
10
-1
10
0
10
1
10
2
10
1
10
2
10
3
10
4
t [ns]
ID [A]
td(off)
tf
tr
td(on)
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
4
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Transient Thermal Impedance
Zth(ch-c)=f(t):D=t/T
0
0.01
0.02
0.05
0.1
0.2
D=0.5
Zth(ch-c) [C/W]
t [sec]
2SK3218-01
FUJI POWER MOSFET
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
45
50
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch),Non Repetitive
I(AV) [A]
Starting Tch [C]
0
25
50
75
100
125
150
0
100
200
300
400
500
Maximum Avalanche energy vs. starting Tch
Eas=f(starting Tch):Vcc=24V,I
AV
<=40A,Non-Repetitive
Eas [mJ]
Starting Tch [C]
t
T
D=
t
T
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