1
Item
Symbol
Rating
Unit
Drain-source voltage
V
DS
200
Continuous drain current
I
D
20
Pulsed drain current
I
D(puls]
80
Gate-source voltage
V
GS
20
Maximum Avalanche Energy
E
AV *1
355
Max. power dissipation Ta=25C
P
D
2
Tc=25C
P
D
45
Operating and storage
T
ch
+150
temperature range
T
stg
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermalcharacteristics
2SK3262-01MR
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item
Symbol Test Conditions
Zero gate voltage drain current I
DSS
V
DS
=200V
V
GS
=20V
I
D
=10A V
GS
=4V
I
D
=10A V
GS
=10V
I
D
=10A V
DS
=25V
V
CC
=100V I
D
=20A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
mA
nA
m
S
pF
A
V
ns
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
2.78
62.5
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=1mA V
GS
=0V
I
D
=1mA V
DS
=V
GS
Tch=25C
V
GS
=0V Tch=125C
V
DS
=0V
V
DS
=25V
V
GS
=0V
f=1MHz
L=100H T
ch
=25C
I
F
=20A V
GS
=0V T
ch
=25C
I
F
=20A V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
A
A
V
mJ
W
W
C
C
*1 L=1.6mH, Vcc=24V
200
1.0
1.5
2.0
10
500
0.2
0.5
10
100
110
150
85
100
9.0
19.0
1700
2550
290
435
185
280
10
15
45
70
225
340
120
180
20
0.93
1.40
250
2.90
-55 to +150
TO-220F15
3. Source
2.54
2
0
1
2
3
4
5
0.1
1
10
100
Typical transfer characteristics
ID=f(VGS):80s pulse test,VDS=25V,Tch=25C
ID [A]
VGS [V]
Characteristics
2SK3262-01MR
FUJI POWER MOSFET
0
50
100
150
0
10
20
30
40
50
Power Dissipation
PD=f(Tc)
PD [W]
Tc [C]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
ID [A]
VDS [V]
Safe operating area
ID=f(VDS):D=0.01,Tc=25C
t=
1s
10s
1ms
10ms
100ms
100s
D.C.
0
1
2
3
4
5
6
0
10
20
30
40
50
15V
3.5V
3.0V
4.0V
4.5V
10V
5.0V
VGS=20V
Typical output characteristics
ID=f(VDS):80s pulse test,Tc=25C
ID [A]
VDS [V]
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
Typical forward transconductance
gfs=f(ID):80s pulse test,VDS=25V,Tch=25C
gfs [s]
ID [A]
0
10
20
30
40
50
60
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
RDS(on) [
]
ID [A]
Typical Drain-Source on-State Resistance
RDS(on)=f(ID):80s pulse test,Tch=25C
10V
15V
20V
4.0V
4.5V
3.5V
VGS=
3.0V
5.0V
t
T
D=
t
T
3
2SK3262-01MR
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0
50
100
150
200
250
300
max.
typ.
Drain-source on-state resistance
RDS(on)=f(Tch):ID=10A,VGS=10V
RDS(on)[m
]
Tch [C]
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS(th) [V]
Tch [C]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
min.
typ.
max.
10
-2
10
-1
10
0
10
1
10
2
100p
1n
10n
100n
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
C [F]
VDS [V]
Ciss
Coss
Crss
0
20
40
60
80
100
120
140
160
180
200
0
2
4
6
8
10
12
14
16
18
20
40V
100V
Vcc=160V
Typical Gate Charge Characteristics
VGS=f(Qg):ID=20A,Tch=25C
0
20
40
60
80
100
120
140
160
180
200
VDS [V]
VGS [V]
Qg [nC]
VGS
VDS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
Typical Forward Characteristics of Reverse Diode
-ID=f(VSD):80s pulse test,Tch=25C
10V
VGS=0V
-ID [A]
VSD [V]
0
25
50
75
100
125
150
0
5
10
15
20
25
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch),Non Repetitive
I(AV) [A]
Starting Tch [C]
4
2SK3262-01MR
FUJI POWER MOSFET
0
25
50
75
100
125
150
0
100
200
300
400
500
Maximum Avalanche energy vs. starting Tch
Eas=f(starting Tch):Vcc=24V,I
AV
<=20A,Non-Repetitive
Eas [mJ]
Starting Tch [C]
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Transient Thermal Impedance
Zth(ch-c)=f(t):D=t/T
0
0.01
0.02
0.05
0.1
0.2
D=0.5
Zth(ch-c) [C/W]
t [sec]
t
T
D=
t
T
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