2SK3272-01L,S
N-channel MOS-FET
Trench Gate MOSFET
60V
6,5m
80A
135W
> Features
> Outline Drawing
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
Avalanche Rated
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics
> Equivalent Circuit
-
Absolute Maximum Ratings (T
C
=25C),
unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V
DS
60
V
Continous Drain Current
I
D
80
A
Pulsed Drain Current
I
D(puls)
320
A
Gate-Source-Voltage V
GS
+30 / -20 V
Maximum Avalanche Energy
E
AV
613
mJ*
Max. Power Dissipation
P
D
135
W
Operating and Storage Temperature Range
T
ch
150
C
T
stg
-55 ~ +150
C
* L=0,13mH, V
CC
=24V
-
Electrical Characteristics (T
C
=25C),
unless otherwise specified
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown-Voltage
BV
DSS
I
D
=1mA
V
GS
=0V
60
V
Gate Threshhold Voltage
V
GS(th)
I
D
=10mA
V
DS=
V
GS
2,5
3,0
3,5
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=60V
T
ch
=25C
1,0
100,0
A
V
GS
=0V
T
ch
=125C
10,0
500,0
A
Gate Source Leakage Current
I
GSS
V
GS
=30V
V
DS
=0V
10
100
nA
Drain Source On-State Resistance
R
DS(on)
I
D
=40A
V
GS
=40V
5,0
6,5
m
Forward Transconductance
g
fs
I
D
=40A
V
DS
=10V
25
50
S
Input Capacitance
C
iss
V
DS
=25V
9000
pF
Output Capacitance
C
oss
V
GS
=0V
1250
pF
Reverse Transfer Capacitance
C
rss
f=1MHz
700
pF
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
t
d(on)
V
CC
=30V
50
ns
t
r
VGS=10V
200
ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
t
d(off)
ID=80A
150
ns
t
f
R
GS
=10
135
ns
Avalanche Capability
I
AV
L = 100H
T
ch
=25C
80
A
Diode Forward On-Voltage
V
SD
I
F
=80A V
GS
=0V T
ch
=25C
1,0
1,5
V
Reverse Recovery Time
t
rr
I
F
=50A V
GS
=0V
85
ns
Reverse Recovery Charge
Q
rr
-dI
F
/dt=100A/s T
ch
=25C
0,25
C
-
Thermal Characteristics
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Thermal Resistance
R
th(ch-a)
channel to ambient
75,0
C/W
R
th(ch-c)
channel to case
0,926
C/W
N-channel MOS-FET
2SK3272-01L,S
60V
6,5m
80A
135W
Trench Gate MOSFET
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance vs. T
ch
Typical Transfer Characteristics
I
D
=f(V
DS
); 80s pulse test; T
C
=25C
R
DS(on)
= f(T
ch
); I
D
=25A; V
GS
=10V
I
D
=f(V
GS
); 80s pulse test; V
DS
=25V; T
ch
=25C
I
D
[A]
1
R
DS(ON)
[m
]
2
I
D
[A]
3
V
DS
[V]
T
ch
[C]
V
GS
[V]
Typical Drain-Source On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
R
DS(on)
=f(I
D
); 80s pulse test; T
C
=25C
g
fs
=f(I
D
); 80s pulse test; V
DS
=25V; T
ch
=25C
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
R
DS(ON)
[m
]
4
g
fs
[S]
5
V
GS(th)
[V]
6
I
D
[A]
I
D
[A]
T
ch
[C]
Typical Capacitances vs. V
DS
Typical Gate Charge Characteristic
Forward Characteristics of Reverse Diode
C=f(V
DS
); V
GS
=0V; f=1MHz
V
GS
=f(Qg); I
D
=80A; Tch=25C
I
F
=f(V
SD
); 80s pulse test; T
ch
=25C
C [F]
7
V
DS
[V]
8
V
GS
[V]
I
F
[A]
9
V
DS
[V]
Qg [nC]
V
SD
[V]
Maximum Avalanche Energy vs. starting T
ch
Safe Operation Area
E
AV
=f(starting T
ch
): V
CC
=24V; I
AV
80A
I
D
=f(V
DS
): D=0,01, Tc=25C
Z
th(ch-c)
[K/W]
Transient Thermal impedance
10
12
Z
thch
=f(t) parameter:D=t/T
E
AV
[mJ]
I
D
[A]
starting T
ch
[C]
V
DS
[V]
t [s]
This specification is subject to change without notice!
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