1
Item
Symbol
Rating
Unit
Drain-source voltage
V
DS
900
Continuous drain current
I
D
10
Pulsed drain current
I
D(puls]
40
Gate-source voltage
V
GS
30
Repetitive or non-repetitive
I
AR *2
10
Maximum Avalanche Energy
E
AV *1
648
Max. power dissipation
P
D
310
Operating and storage
T
ch
+150
temperature range
T
stg
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermalcharacteristics
2SK3341-01
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Item
Symbol Test Conditions
Zero gate voltage drain current I
DSS
V
DS
=900V
V
GS
=30V
I
D
=5A V
GS
=10V
I
D
=5A V
DS
=25V
V
CC
=600V I
D
=10A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
mA
nA
S
pF
nC
A
V
s
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
0.403
50.0
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total gate charge
Gate-Source charge
Gete-Drain charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=1mA V
GS
=0V
I
D
=1mA V
DS
=V
GS
T
ch
=25C
V
GS
=0V T
ch
=125C
V
DS
=0V
V
DS
=25V
V
GS
=0V
f=1MHz
Vcc=450V
I
D
=10A
V
GS
=10V
L=11.9mH T
ch
=25C
I
F
=2xI
DR
V
GS
=0V T
ch
=25C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/s T
ch
=25C
V
A
A
V
A
mJ
W
C
*1 L=11.9mH, Vcc=90V *2 Tch=150C
900
2.5
3.0
3.5
10
500
0.2
1.0
10
100
0.92
1.2
3.5
7
2200
3300
240
360
115
173
28
42
70
105
220
330
90
135
120
180
36
54
40
60
10
1.00
1.50
1.8
21.0
-55 to +150
<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
2
Characteristics
2SK3341-01
FUJI POWER MOSFET
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
400
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [
C]
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
100ms
10ms
1ms
100
s
10
s
Safe operating area
ID=f(VDS):Single Pulse,Tc=25C
t=
1
s
D.C.
ID [A]
VDS [V]
0
2
4
6
8
10
12
14
16
18
20
22
24
26
0
2
4
6
8
10
12
14
16
18
20
22
6.5V
20V
10V
7V
6.0V
5.5V
5.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80s pulse test,Tch=25C
VGS=4.5V
0
1
2
3
4
5
6
7
8
0.01
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80s pulse test,VDS=25V,Tch=25C
0.1
1
10
0.1
1
10
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80s pulse test,VDS=25V,Tch=25C
0
5
10
15
20
25
0.0
0.5
1.0
1.5
2.0
2.5
3.0
6.5V
RDS(on) [
]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80s pulse test,Tch=25C
10V
20V
7V
6.0V
5.5V
5.0V
VGS=
4.5V
t
T
D=
t
T
3
10
-1
10
0
10
1
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t [ns]
ID [A]
2SK3341-01
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
RDS(on) [
]
Tch [C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
max.
typ.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VGS(th) [V]
Tch [
C]
0
50
100
150
200
250
0
5
10
15
20
25
Qg [C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A,Tch=25C
VGS [V]
720V
450V
Vcc= 180V
10
-2
10
-1
10
0
10
1
10
2
10
-11
10
-10
10
-9
10
-8
10
-7
C [F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80s pulse test,Tch=25C
4
2SK3341-01
FUJI POWER MOSFET
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
800
EAV [mJ]
starting Tch [
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=90V,I(AV)<=10A
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-3
10
-2
10
-1
10
0
Transient Thermal impedance
Zth(ch-c)=f(t) parameter:D=t/T
Zth(ch-c) [K/W]
t [s]
0.5
0.2
0.02
0.05
0.1
0.01
0
t
T
D=
t
T
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