1
Item
Symbol
Ratings
Unit
Drain-source voltage
V
DS
450
Continuous drain current
I
D
8
Pulsed drain current
I
D(puls]
32
Gate-source voltage
V
GS
30
Repetitive or non-repetitive
I
AR *2
8
Maximum Avalanche Energy
E
AS *1
193
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
P
D
Ta=25C
2.02
Tc=25C
65
Operating and storage
T
ch
+150
temperature range
T
stg
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermalcharacteristics
2SK3514-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Item
Symbol Test Conditions
Zero gate voltage drain current I
DSS
V
DS
=450V V
GS
=0V
V
DS
=360V V
GS
=0V
V
GS
=30V
I
D
=4A V
GS
=10V
I
D
=4A V
DS
=25V
V
CC
=300V I
D
=4A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
nA
S
pF
nC
A
V
s
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
1.92
62.0
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250A V
GS
=0V
I
D
= 250A V
DS
=V
GS
T
ch
=25C
T
ch
=125C
V
DS
=0V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=225V
I
D
=8A
V
GS
=10V
L=5.53mH T
ch
=25C
I
F
=8A V
GS
=0V T
ch
=25C
I
F
=8A V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
A
A
V
A
mJ
kV/s
kV/s
W
C
C
450
3.0
5.0
25
250
10
100
0.50
0.65
4
8
800
1200
120
150
4.5
7
15
23
12
18
25
38
7
11
22
33
9.5
14.5
6.5
10
8
1.00
1.50
0.7
3.5
-55 to +150
Outline Drawings
TO-220AB
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 I
F
-I
D
, -di/dt=50A/s, Vcc BV
DSS
, Tch 150C
=
<
=
<
=
<
*1 L=5.53mH, Vcc=45V *2 Tch 150C
=
<
*4 VDS 450V
<=
2
Characteristics
2SK3514-01
FUJI POWER MOSFET
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C
ID=f(VDS):80s Pulse test,Tch=25C
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C
RDS(on)=f(ID):80s Pulse test, Tch=25C
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [
C]
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
20V
10V
8V
7.5V
7.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=6.5V
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1
1
10
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
0
5
10
15
20
25
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
RDS(on) [
]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
7.0V
VGS=6.5V
0
25
50
75
100
125
150
0
50
100
150
200
250
300
EAV [mJ]
starting Tch [
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=45V,I(AV)<=8A
3
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
0
10
20
30
40
50
60
0
2
4
6
8
10
12
14
16
18
20
22
24
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
360V
225V
Vcc= 90V
2SK3514-01
FUJI POWER MOSFET
VGS=f(Qg):ID=8A, Tch=25C
IF=f(VSD):80s Pulse test,Tch=25C
t=f(ID):Vcc=300V, VGS=10V, RG=10
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
RDS(on) [
]
Tch [
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=4A,VGS=10V
VGS(th)=f(Tch):VDS=VGS,ID=250A
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th) [V]
Tch [
C]
10
-1
10
0
10
1
10
2
10
3
1p
10p
100p
1n
10n
C [F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
10
0
10
1
10
0
10
1
10
2
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
4
2SK3514-01
FUJI POWER MOSFET
I
AV
=f(t
AV
):starting Tch=25C. Vcc=45V
A
valanche current I
AV
[A]
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Transient Thermal Impedance
Zth(ch-c)=f(t):D=t/T
0
0.01
0.02
0.05
0.1
0.2
D=0.5
Zth(ch-c) [
o
C/W]
t [sec]
t
T
D=
t
T
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
Maximum Avalanche Current Pulsewidth
t
AV
[sec]
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