DATE
NAME
DRAWN
CHECKED
REVISIONS
APPROVED
DWG.NO.
Fuji Electric Co.,Ltd.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
MA4LE
Fuji Power MOSFET SuperFAP-G series Target Specification
PRELIMINARY
1) Package
TO-220F
2) Absolute Maximum Ratings (Tc=25
unless otherwise specified)
Items
Units
Drain-Source Voltage
V
Continuous Drain Current
A
Pulsed Drain Current
A
Gate-Source Voltage
V
A
mJ
*1
Maximum Drain-Source dV/dt
dV
DS
/dt
kV/us
Peak Diode recovery dV/dt
dV/dt
kV/us *2
W
W
Operating and Storage
Temperature range
3)Electrical Characteristics (Tch=25
unless otherwise specified)
Items
Symbols
Test Conditions
min.
typ.
max.
Units
Drain-Source Breakdown Voltage BV
DSS
I
D
=250uA
V
GS
=0V
800
---
---
V
Gate Threshold Voltage
V
GS
(th)
I
D
=250uA
V
DS
=V
GS
3.0
---
5.0
V
V
DS
=800V
T
ch
=25
---
---
50
A
V
GS
=0V
T
ch
=125
---
---
500
A
Gate-Source Leakage Current
I
GSS
V
GS
=30V
V
DS
=0V
---
---
100
nA
Input Capacitance
C
iss
V
DS
=25V
---
830
---
Output Capacitance
C
oss
V
GS
=0V
---
100
---
pF
Reverse Transfer Capacitance
C
rss
f=1MHz
---
5
---
Total Gate Charge
Qg
Vcc=400V
---
25
---
Gate to Source Charge
Qgs
I
D
=7A
---
7.5
---
nC
Gate to Drain (Miller) Charge
Qgd
V
GS
=10V
---
7
---
Avalanche Capability
I
AV
L=8.80mH
Tch=25
7
---
---
A
Diode Forward On-Voltage
V
SD
I
F
=7A,VGS=0V,Tch=25
---
1.0
1.5
V
4) Thermal Characteristics
Items
Symbols
Test Conditions
min.
typ.
max.
Units
Channel to Case
Rth(ch-c)
1.79
/W
Channel to Ambient
Rth(ch-a)
58.0
/W
*1 L=8.80mH,Vcc=80V
*2 I
F
-I
D
,-di/dt=50A/
s,Vcc
BV
DSS
,Tch
150
C
Non-Repetitive
Maximum Avalanche Energy
2SK3530-01MR (800V/1.9
/7A)
V
GS
I
AR
E
AS
Symbols
V
DS
I
D
I
D(pulse)
30
7
Ratings
800
7
28
---
1.9
235.3
20
5
70
2.16
150
-55
+150
---
I
DSS
R
DS
(on)
I
D
=3.5A
Repetitive and Non-Repetitive
Maximum Avalanche Current
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
VGS=10V
T
ch
T
stg
Maximum Power Dissipation
P
D @Ta=25
P
D
c=25
MT5F12296 1/1
a
a:Absolute max ratings were revised.
Sep.-09-'02
Sep.-09-'02
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