1
Item
Symbol
Ratings
Unit Remarks
Drain-source voltage
V
DS
250
V
DSX
220
Continuous drain current
I
D
37
3.4
*4
Pulsed drain current
I
D(puls]
148
Gate-source voltage
V
GS
30
Repetitive or non-repetitive
I
AR *2
37
Maximum Avalanche Energy
E
AS *1
251.9
Maximum Drain-Source dV/dt
dV
DS
/dt
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
P
D
2.4
*4
270
Operating and storage
T
ch
+150
temperature range
T
stg
Electrical characteristics atT
c
=25C ( unless otherwise specified)
Thermalcharacteristics
2SK3535-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
for Switching
Absolute Maximum Ratings at
Tc=25C
( unless otherwise specified)
Item
Symbol Test Conditions
Zero gate voltage drain current I
DSS
V
DS
=250V V
GS
=0V
V
DS
=200V V
GS
=0V
V
GS
=30V
I
D
=12.5A V
GS
=10V
I
D
=12.5A V
DS
=25V
V
CC
=72V I
D
=12.5A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
nA
m
S
pF
nC
A
V
s
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
R
th(ch-a) *4
channel to ambient
0.463
87.0
52.0
C/W
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=250A V
GS
=0V
I
D
= 250A V
DS
=V
GS
T
ch
=25C
T
ch
=125C
V
DS
=0V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=72V
I
D
=25A
V
GS
=10V
L=309 H T
ch
=25C
I
F
=25A V
GS
=0V T
ch
=25C
I
F
=25A V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
V
A
A
A
V
A
mJ
kV/s
kV/s
W
W
C
C
250
3.0
5.0
25
250
10
100
75
100
8
16
2000
3000
220
330
15
30
20
30
30
45
60
90
20
30
44
66
14
21
16
24
37
1.10
1.65
0.45
1.5
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Super FAP-G Series
Foot Print Pattern
(1) Gate(G)
(3) Source(S)
[power line]
(4) Drain(D)
(2) Source(S)
[signal line]
V
GS
=30V
Ta=25C
V
DS
250V
Ta=25C
=
<
*4 Surface mounted on 1000mm
2
, t=1.6mm FR-4 PCB(Drain pad area:500mm
2
)
*3 I
F
-I
D
, -di/dt=50A/s, Vcc BV
DSS
, Tch 150C
=
<
=
<
=
<
*1 L=0.309mH, Vcc=48V, See to Avalanche Energy Graph *2 Tch 150C
=
<
200304
2
0
2
4
6
8
10
12
0
20
40
60
80
100
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
Characteristics
2SK3535-01
FUJI POWER MOSFET
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C
ID=f(VDS):80s Pulse test,Tch=25C
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C
0
25
50
75
100
125
150
0
1
2
3
4
5
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [
C]
Surface mounted on
1000mm
2
,t=1.6mm FR-4 PCB
(Drain pad area : 500mm
2
)
RDS(on)=f(ID):80s Pulse test, Tch=25C
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
0
20
40
60
80
100
0.00
0.05
0.10
0.15
0.20
0.25
7.0V
6.5V
RDS(on) [
]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
0
25
50
75
100
125
150
0
50
100
150
200
250
300
Allowable Power Dissipation
PD=f(Tc)
PD
[W
]
Tc [
C]
3
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
2SK3535-01
FUJI POWER MOSFET
VGS=f(Qg):ID=25A, Tch=25C
IF=f(VSD):80s Pulse test,Tch=25C
t=f(ID):Vcc=72V, VGS=10V, RG=10
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VGS(th) [V]
Tch [
C]
0
10
20
30
40
50
60
0
2
4
6
8
10
12
14
Qg [C]
Typical Gate Charge Characteristics
VGS [V]
96V
72V
Vcc= 36V
-50
-25
0
25
50
75
100
125
150
0
30
60
90
120
150
180
210
240
270
RD
S
(
o
n
)
[
m
]
Tch [
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=12.5A,VGS=10V
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
C [
n
F
]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
4
2SK3535-01
FUJI POWER MOSFET
0
25
50
75
100
125
150
0
5
10
15
20
25
30
IAV [A]
starting Tch [
C]
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch):Vcc=48V
0
1000
2000
3000
4000
5000
0
10
20
30
40
50
60
70
80
90
100
Rth(ch-a) [C/W]
Drain Pad Area [mm
2
]
Thermal Resistance vs. Drain Pad area
t=1.6mm FR-4 PCB
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
IAS=15A
IAS=22A
IAS=37A
E
AS [m
J
]
starting Tch [
C]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=48V
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
C,Vcc=48V
Av
al
an
c
h
e
C
u
rr
e
n
t I
AV
[A
]
t
AV
[sec]
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zt
h(c
h
-c
) [
C/
W
]
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
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