1
P4
Item
Symbol
Ratings
Unit
Drain-source voltage
V
DS
250
V
DSX *5
220
Continuous drain current
I
D
25
Pulsed drain current
I
D(puls]
100
Gate-source voltage
V
GS
30
Repetitive or non-repetitive
I
AR *2
25
Maximum Avalanche Energy
E
AS *1
372
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
P
D
Ta=25C
2.02
Tc=25C
135
Operating and storage
T
ch
+150
temperature range
T
stg
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermalcharacteristics
2SK3556-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Item
Symbol Test Conditions
Zero gate voltage drain current I
DSS
V
DS
=250V V
GS
=0V
V
DS
=200V V
GS
=0V
V
GS
=30V
I
D
=12.5A
I
D
=12.5A V
DS
=25V
V
CC
=72V I
D
=12.5A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
nA
m
S
pF
nC
A
V
s
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
0.926
62.0
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=250A V
GS
=0V
I
D
= 250A V
DS
=V
GS
T
ch
=25C
T
ch
=125C
V
DS
=0V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=72V
I
D
=12A
V
GS
=10V
L=100H T
ch
=25C
I
F
=25A V
GS
=0V T
ch
=25C
I
F
=25A V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
V
A
A
V
A
mJ
kV/s
kV/s
W
C
C
250
3.0
5.0
25
250
10
100
75
100
8
16
2000
3000
220
330
15
30
20
30
30
45
60
90
20
30
44
66
14
21
16
24
25
1.10
1.65
0.45
1.5
-55 to +150
Outline Drawings
*1 L=0.67mH, Vcc=48V *2 Tch=150C
<
*3 I
F
=-I
D
, -di/dt=50A/s, Vcc=BV
DSS
, Tch=150C
<
<
<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
=
<
V
GS
=10V
*4 V
DS
250V *5 V
GS
=-30V *6 t=60sec f=60Hz
2
Characteristics
2SK3556-01L,S,SJ
FUJI POWER MOSFET
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C
ID=f(VDS):80s Pulse test,Tch=25C
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C
RDS(on)=f(ID):80s Pulse test, Tch=25C
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
200
Allowable Power Dissipation
PD=f(Tc)
PD
[W
]
Tc [
C]
0
2
4
6
8
10
12
0
20
40
60
80
100
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID
[A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
ID
[A]
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
g
f
s [S
]
ID [A]
Typical Transconductance
0
20
40
60
80
100
0.00
0.05
0.10
0.15
0.20
0.25
7.0V
6.5V
RD
S(
on)
[
]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
-50
-25
0
25
50
75
100
125
150
0
30
60
90
120
150
180
210
240
270
RDS
(
o
n
)
[
m
]
Tch [
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=12.5A,VGS=10V
3
2SK3556-01L,S,SJ
FUJI POWER MOSFET
VGS=f(Qg):ID=25A, Tch=25C
IF=f(VSD):80s Pulse test,Tch=25C
t=f(ID):Vcc=72V, VGS=10V, RG=10
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VGS(
t
h
)
[V]
Tch [
C]
0
10
20
30
40
50
60
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VG
S
[V
]
96V
72V
Vcc= 36V
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
C [
n
F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
I
F
[A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns
]
ID [A]
4
2SK3556-01L,S,SJ
FUJI POWER MOSFET
PRE-SOLDER
See Note: 1.
Trademark
Lot No.
Type name
Note: 1. Guaranteed mark of avalanche ruggedness.
CONNECTION
GATE
DRAIN
SOURCE
DIMENSIONS ARE IN MILLIMETERS.
FUJI POWER MOS FET
1
2
3
1
2
3
Outline Drawings (mm)
Type(L)
GATE
DRAIN
SOURCE
See Note: 1.
Trademark
Lot No.
DIMENSIONS ARE IN MILLIMETERS.
Type name
FUJI POWER MOS FET
CONNECTION
Notes
1. ( ) : Reference dimensions.
Note: 1. Guaranteed mark of
avalanche ruggedness.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
Pre-Solder
Fig. 1.
Fig. 1.
OUT VIEW
Solder Plating
4
1
2
4
3
Type(S)
GATE
DRAIN
SOURCE
See Note: 1.
Trademark
Lot No.
Type name
FUJI POWER MOS FET
CONNECTION
Notes
1. ( ) : Reference dimensions.
Note: 1. Guaranteed mark of
avalanche ruggedness.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
OUT VIEW
Fig. 1.
Fig. 1.
Solder Plating
Pre-Solder
DIMENSIONS ARE IN MILLIMETERS.
2
4
1
3
Type(SJ)
I
AV
=f(t
AV
):starting Tch=25C. Vcc=48V
A
valanche current I
AV
[A]
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
Maximum Avalanche Current Pulsewidth
t
AV
[sec]
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zt
h
(
c
h
-c
) [
C/
W
]
t [sec]
PDF 
ZIP