1
TO-220F
Item
Symbol
Ratings
Unit
Drain-source voltage
V
DS
150
V
DSX *5
130
Continuous drain current
I
D
23
Pulsed drain current
I
D(puls]
96
Gate-source voltage
V
GS
20
Repetitive or non-repetitive
I
AR *2
23
Maximum Avalanche Energy
E
AS *1
242
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
P
D
Ta=25C
2.1
Tc=25C
40
Operating and storage
T
ch
+150
temperature range
T
stg
Isolation Voltage
V
ISO *6
2
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermalcharacteristics
2SK3579-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Item
Symbol Test Conditions
Zero gate voltage drain current I
DSS
V
DS
=150V V
GS
=0V
V
DS
=120V V
GS
=0V
V
GS
=20V
I
D
=11.5A
I
D
=11.5A V
DS
=25V
V
CC
=48V I
D
=11.5A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
nA
m
S
pF
nC
%/C
A
V
s
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
3.125
58.0
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
Rg
Rg/
ch
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Internal Resistance
(Tep.Confficient)
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=250A V
GS
=0V
I
D
= 250A V
DS
=V
GS
T
ch
=25C
T
ch
=125C
V
DS
=0V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V
I
D
=23A
V
GS
=10V
L=100H T
ch
=25C
I
F
=23A V
GS
=0V T
ch
=25C
I
F
=23A V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
V
A
A
V
A
mJ
kV/s
kV/s
W
C
C
kVrms
150
1.0
2.5
25
250
10
100
65
90
12
24
1470
2200
190
285
18
27
24
36
23
35
300
450
45
68
48
72
6
9
12
18
23.3
39
54.4
0.12
23
1.10
1.65
0.13
0.6
-55 to +150
Outline Drawings
*1 L=0.67mH, Vcc=48V *2 Tch=150C
<
*3 I
F
=-I
D
, -di/dt=50A/s, Vcc=BV
DSS
, Tch=150C
<
<
<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
=
<
V
GS
=10V
*4 V
DS
250V *5 V
GS
=-20V *6 t=60sec f=60Hz
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
2
Characteristics
2SK3579-01MR
FUJI POWER MOSFET
ID=f(VDS):80s Pulse test,Tch=25C
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C
RDS(on)=f(ID):80s Pulse test, Tch=25C
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
45
50
Allowable Power Dissipation
PD=f(Tc)
PD
[W
]
Tc [
C]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
5
10
15
20
25
30
35
40
45
50
55
8V
20V 10V
5.0V
4.0V
4.5V
ID
[A
]
VDS [V]
Typical Output Characteristics
VGS=3.5V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.1
1
10
100
ID
[A]
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
g
f
s [S
]
ID [A]
Typical Transconductance
0
10
20
30
40
50
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
4.5V
4.0V
RDS
(on
)
[
]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
5V
VGS=
3.5V
-50
-25
0
25
50
75
100
125
150
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
RD
S
(
on
) [
]
Tch [
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=11.5A,VGS=10V
3
2SK3579-01MR
FUJI POWER MOSFET
VGS=f(Qg):ID=23A, Tch=25C
IF=f(VSD):80s Pulse test,Tch=25C
t=f(ID):Vcc=48V, VGS=10V, RG=10
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VGS(
t
h
)
[
V
]
Tch [
C]
0
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
12
14
16
18
20
22
24
Qg [nC]
Typical Gate Charge Characteristics
VG
S [
V
]
Vcc= 48V
10
-1
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
C [
n
F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.1
1
10
100
VGS=10V
VGS=0V
IF
[
A
]
VSD [V]
Typical Forward Characteristics of Reverse Diode
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [n
s]
ID [A]
0
25
50
75
100
125
150
0
50
100
150
200
250
300
EAV
[m
J
]
starting Tch [
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=23A
4
2SK3579-01MR
FUJI POWER MOSFET
I
AV
=f(t
AV
):starting Tch=25C. Vcc=48V
A
valanche current I
AV
[A]
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
Typ.
RG
[
]
max.
min.
Gate-Internal Resistance vs. Tch
RG=f(Tch):f=1MHz,VDS=0V
Tch [
C]
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
Maximum Avalanche Current Pulsewidth
t
AV
[sec]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
Transient Thermal impedance
Zth(ch-c)=f(t) :D=0
Zt
h
(
c
h
-c
) [
K
/
W
]
t [s]
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