1
TO-220F
Item
Symbol
Ratings
Unit
Drain-source voltage
V
DS
100
V
DSX *5
70
Continuous drain current
I
D
73
Pulsed drain current
I
D(puls]
292
Gate-source voltage
V
GS
30
Non-repetitive Avalanche current
I
AS *2
73
Maximum Avalanche Energy
E
AS *1
319.2
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
P
D
Ta=25C
2.16
Tc=25C
95
Operating and storage
T
ch
+150
temperature range
T
stg
Isolation Voltage
V
ISO *6
2
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermalcharacteristics
2SK3587-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Item
Symbol Test Conditions
Zero gate voltage drain current I
DSS
V
DS
=100V V
GS
=0V
V
DS
=80V V
GS
=0V
V
GS
=30V
I
D
=25A V
GS
=10V
I
D
=25A V
DS
=25V
V
CC
=48V I
D
=25A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
nA
m
S
pF
nC
A
V
s
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
1.316
58.0
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250A V
GS
=0V
I
D
= 250A V
DS
=V
GS
T
ch
=25C
T
ch
=125C
V
DS
=0V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=50V
I
D
=50A
V
GS
=10V
L=71.9H T
ch
=25C
I
F
=50A V
GS
=0V T
ch
=25C
I
F
=50A V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
V
A
A
V
A
mJ
kV/s
kV/s
W
C
C
kVrms
100
3.0
5.0
25
250
10
100
19
25
15
30
1830
2745
460
690
38
57
20
30
35
53
50
75
23
35
52
78
16
24
18
27
73
1.10
1.65
0.1
0.4
-55 to +150
Outline Drawings
(mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 I
F
-I
D
, -di/dt=50A/s, Vcc BV
DSS
, Tch 150C
=
<
=
<
=
<
*4 V
DS
100V
<=
www.fujielectric.co.jp/denshi/scd
*5 V
GS
=-30V *6 t=60sec, f=60Hz
*1 L=71.9H, Vcc=48V,Tch=25C, See to Avalanche Energy Graph *2 Tch 150C
=
<
200304
2
Characteristics
2SK3587-01MR
FUJI POWER MOSFET
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C
ID=f(VDS):80s Pulse test,Tch=25C
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C
RDS(on)=f(ID):80s Pulse test, Tch=25C
0
2
4
6
8
10
12
0
40
80
120
160
200
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
0
40
80
120
160
200
0.00
0.03
0.06
0.09
0.12
0.15
7.0V
6.5V
RDS(on) [
]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
800
I
AS
=30A
I
AS
=73A
I
AS
=44A
E
AS
[m
J]
starting Tch [
C]
Maximum Avalanche Energy vs. starting Tch
E
AS
=f(starting Tch):Vcc=48V
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Allowable Power Dissipation
PD=f(Tc)
P
D
[W
]
Tc [
C]
3
2SK3587-01MR
FUJI POWER MOSFET
VGS=f(Qg):ID=50A, Tch=25C
IF=f(VSD):80s Pulse test,Tch=25C
t=f(ID):Vcc=48V, VGS=10V, RG=10
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
RDS(on) [ m
]
Tch [
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=25A,VGS=10V
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
VGS(th) [V]
Tch [
C]
A
0
20
40
60
80
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
Vcc= 50V
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
4
2SK3587-01MR
FUJI POWER MOSFET
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
Single Pulse
Maximum Avalanche Current vs Pulse width
I
AV
=f(t
AV
):starting Tch=25
C,Vcc=48V
Aval
an
che
C
u
r
r
e
n
t
I
AV
[A]
t
AV
[sec]
http://www.fujielectric.co.jp/denshi/scd/
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zt
h(c
h
-c
) [
C/
W
]
t [sec]
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