1
1 G : Gate
2 S1 : Source1
3 S2 : Source2
4 D : Drain
FUJI POWER MOS FET
Fig.1
Fig.1
Note:1. Dimension shown in ( ) is
reference values.
.
Special
specification
for customer
Trademark
Lot No.
Type name
No.
D
S2
G
S1
MARKING
OUT VIEW
DIMENSIONS ARE IN MILLIMETERS.
MARKING
CONNECTION
1 G : Gate
2 S1 : Source1
3 S2 : Source2
4 D : Drain
Item
Symbol
Ratings
Unit
Drain-source voltage
V
DS
100
V
DSX *5
70
Continuous drain current
I
D
50
6.9 **
Pulsed drain current
I
D(puls]
200
Gate-source voltage
V
GS
30
Non-repetitive Avalanche current
I
AS *2
50
Maximum Avalanche Energy
E
AS *1
465
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
P
D
Tc=25C
123
Ta=25C
2.4
Operating and storage
T
ch
+150
temperature range
T
stg
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermalcharacteristics
2SK3589-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current I
DSS
V
DS
=100V V
GS
=0V
V
DS
=80V V
GS
=0V
V
GS
=30V
I
D
=25A V
GS
=10V
I
D
=25A V
DS
=25V
V
CC
=48V I
D
=
25A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
nA
m
S
pF
nC
A
V
s
C
ns
Min. Typ. Max. Units
Thermal resistance
0.93
87.0
52.0
C/W
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250A V
GS
=0V
I
D
= 250A V
DS
=V
GS
T
ch
=25C
T
ch
=125C
V
DS
=0V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=50V
I
D
=50A
V
GS
=10V
L=100
H T
ch
=25C
I
F
=50A V
GS
=0V T
ch
=25C
I
F
=50A V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
V
A
A
A
V
A
mJ
kV/s
kV/s
W
W
C
C
100
3.0
5.0
25
250
10
100
19
25
19
25
1830
2745
460
690
38
57
20
30
35
53
50
75
23
35
52
78
16
24
18
27
50
1.10
1.65
0.1
0.4
-55 to +150
Outline Drawings
(mm)
Equivalent circuit schematic
Super FAP-G Series
*3 I
F
-I
D
, -di/dt=50A/s, Vcc BV
DSS
, Tch 150C
=
<
=
<
=
<
*1 L=223H, Vcc=48V *2 Tch 150C
=
<
*4 V
DS
100V
<=
www.fujielectric.co.jp/denshi/scd
*5 V
GS
=-30V
Tc=25C
Ta=25C
** Surface mounted on 1000mm
2
, t=1.6mm FR-4 PCB(Drain pad area : 500mm
2
)
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
R
th(ch-a) **
channel to ambient
** Surface mounted on 1000mm
2
, t=1.6mm FR-4 PCB(Drain pad area : 500mm
2
)
G : Gate
S2 : Source
D : Drain
S1 : Source
2
Characteristics
2SK3589-01
FUJI POWER MOSFET
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C
ID=f(VDS):80s Pulse test,Tch=25C
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C
0
25
50
75
100
125
150
0
100
200
300
400
500
EAV [mJ]
starting Tch [
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=50A
0
2
4
6
8
10
12
0
40
80
120
160
200
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
0
25
50
75
100
125
150
0
1
2
3
4
5
Surface mounted on
1000mm
2
,t=1.6mm FR-4 PCB
(Drain pad area : 500mm
2
)
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [
C]
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
200
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [
C]
3
2SK3589-01
FUJI POWER MOSFET
VGS=f(Qg):ID=50A, Tch=25C
IF=f(VSD):80s Pulse test,Tch=25C
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
RDS(on) [ m
]
Tch [
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=25A,VGS=10V
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
VGS(th) [V]
Tch [
C]
A
0
20
40
60
80
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
Vcc= 50V
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
RDS(on)=f(ID):80s Pulse test, Tch=25C
0
40
80
120
160
200
0.00
0.03
0.06
0.09
0.12
0.15
7.0V
6.5V
RDS(on) [
]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
4
2SK3589-01
FUJI POWER MOSFET
I
AV
=f(t
AV
):starting Tch=25C. Vcc=48V
t=f(ID):Vcc=48V, VGS=10V, RG=10
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
Maximum Avalanche Current Pulsewidth
Avalanche Current I
AV
[A]
t
AV
[sec]
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [C/W]
t [sec]
0
1000
2000
3000
4000
5000
0
10
20
30
40
50
60
70
80
90
100
Rth(ch-a) [
C/W]
Drain Pad Area [mm
2
]
Thermal Resistance vs. Drain Pad area
t=1.6mm FR-4 PCB
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