1
TO-220F
Item
Symbol
Ratings
Unit
Drain-source voltage
V
DS
150
V
DSX *5
120
Continuous drain current
I
D
40
Pulsed drain current
I
D(puls]
160
Gate-source voltage
V
GS
30
Non-repetitive Avalanche current
I
AS *2
40
Maximum Avalanche Energy
E
AS *1
387
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
P
D
Ta=25C
2.16
Tc=25C
70
Operating and storage
T
ch
+150
temperature range
T
stg
Isolation voltage
V
ISO *6
2
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermalcharacteristics
2SK3591-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Item
Symbol Test Conditions
Zero gate voltage drain current I
DSS
V
DS
=150V V
GS
=0V
V
DS
=120V V
GS
=0V
V
GS
=30V
I
D
=20A V
GS
=10V
I
D
=20A V
DS
=25V
V
CC
=48V I
D
=20A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
nA
m
S
pF
nC
A
V
s
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
1.786
58.0
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250A V
GS
=0V
I
D
= 250A V
DS
=V
GS
T
ch
=25C
T
ch
=125C
V
DS
=0V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=75V
I
D
=40A
V
GS
=10V
L=100
H T
ch
=25C
I
F
=40A V
GS
=0V T
ch
=25C
I
F
=40A V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
V
A
A
V
A
mJ
kV/s
kV/s
W
C
C
kVrms
150
3.0
5.0
25
250
10
100
31
41
13
26
1940
2910
310
465
24
36
20
30
26
39
50
75
20
30
52
78
15
22.5
18
27
40
1.10
1.65
0.14
0.77
-55 to +150
Outline Drawings
(mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 I
F
-I
D
, -di/dt=50A/s, Vcc BV
DSS
, Tch 150C
=
<
=
<
=
<
*1 L=335
H, Vcc=48V *2 Tch 150C
=
<
*4 V
DS
150V
<=
www.fujielectric.co.jp/denshi/scd
*5 V
GS
=-30V *6 t=60sec f=60Hz
2
Characteristics
2SK3591-01MR
FUJI POWER MOSFET
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C
ID=f(VDS):80s Pulse test,Tch=25C
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C
RDS(on)=f(ID):80s Pulse test, Tch=25C
0
25
50
75
100
125
150
0
100
200
300
400
500
EAV [mJ]
starting Tch [
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=40A
0
2
4
6
8
10
12
0
40
80
120
160
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
0
40
80
120
160
0.00
0.03
0.06
0.09
0.12
0.15
7.0V
6.5V
RDS(on) [
]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [
C]
3
2SK3591-01MR
FUJI POWER MOSFET
VGS=f(Qg):ID=40A, Tch=25C
IF=f(VSD):80s Pulse test,Tch=25C
t=f(ID):Vcc=48V, VGS=10V, RG=10
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
100
RDS(on) [ m
]
Tch [
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=20A,VGS=10V
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
A
VGS(th) [V]
Tch [
C]
0
20
40
60
80
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
Vcc= 75V
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
4
2SK3591-01MR
FUJI POWER MOSFET
I
AV
=f(t
AV
):starting Tch=25C. Vcc=48V
A
valanche current I
AV
[A]
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
Maximum Avalanche Current Pulsewidth
t
AV
[sec]
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Transient Thermal Impedance
Zth(ch-c)=f(t):Duty=0
Zth(ch-c) [
o
C/W]
t [sec]
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