1
TO-220F
Item
Symbol
Ratings
Unit
Drain-source voltage
V
DS
200
V
DSX *5
170
Continuous drain current
I
D
45
Pulsed drain current
I
D(puls]
180
Gate-source voltage
V
GS
30
Non-repetitive Avalanche current
I
AS *2
45
Maximum Avalanche Energy
E
AS *1
258.9
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
P
D
Ta=25C
2.16
Tc=25C
95
Operating and storage
T
ch
+150
temperature range
T
stg
Isolation voltage
V
ISO *6
2
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermalcharacteristics
2SK3595-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Item
Symbol Test Conditions
Zero gate voltage drain current I
DSS
V
DS
=200V V
GS
=0V
V
DS
=160V V
GS
=0V
V
GS
=30V
I
D
=15A V
GS
=10V
I
D
=15A V
DS
=25V
V
CC
=48V I
D
=15A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
nA
m
S
pF
nC
A
V
s
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
1.316
58.0
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250A V
GS
=0V
I
D
= 250A V
DS
=V
GS
T
ch
=25C
T
ch
=125C
V
DS
=0V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=100V
I
D
=30A
V
GS
=10V
L=205H T
ch
=25C
I
F
=30A V
GS
=0V T
ch
=25C
I
F
=30A V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
V
A
A
V
A
mJ
kV/s
kV/s
W
C
C
200
3.0
5.0
25
250
10
100
50
66
12.5
25
1960
2940
260
390
18
27
20
30
17
26
53
80
19
29
51
76.5
15
22.5
16
24
45
1.10
1.65
0.19
1.4
-55 to +150
Outline Drawings
(mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 I
F
-I
D
, -di/dt=50A/s, Vcc BV
DSS
, Tch 150C
=
<
=
<
=
<
*4 V
DS
200V
<=
www.fujielectric.co.jp/denshi/scd
*5 V
GS
=-30V *6 t=60sec f=60Hz
200304
*1 L=205H, Vcc=48V,Tch=25C, See to Avalanche Energy Graph *2 Tch 150C
=
<
2
Characteristics
2SK3595-01MR
FUJI POWER MOSFET
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C
ID=f(VDS):80s Pulse test,Tch=25C
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C
RDS(on)=f(ID):80s Pulse test, Tch=25C
0
2
4
6
8
10
12
0
20
40
60
80
100
120
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
0
20
40
60
80
100
120
0.00
0.05
0.10
0.15
0.20
7.0V
6.5V
RDS(on) [
]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
100
Allowable Power Dissipation
PD=f(Tc)
P
D
[W
]
Tc [
C]
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
800
I
AS
=18A
I
AS
=27A
I
AS
=45A
EAS
[m
J]
starting Tch [
C]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=48V
3
2SK3595-01MR
FUJI POWER MOSFET
VGS=f(Qg):ID=30A, Tch=25C
IF=f(VSD):80s Pulse test,Tch=25C
t=f(ID):Vcc=48V, VGS=10V, RG=10
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100
120
140
160
180
200
RDS(on) [ m
]
Tch [
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=15A,VGS=10V
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
A
VGS(th) [V]
Tch [
C]
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
Vcc= 100V
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
4
2SK3595-01MR
FUJI POWER MOSFET
http://www.fujielectric.co.jp/denshi/scd/
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
C,Vcc=48V
Av
al
an
c
h
e
C
u
rr
e
n
t I
AV
[A
]
t
AV
[sec]
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zt
h(c
h
-c
) [
C/
W
]
t [sec]
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