1
1 G : Gate
2 S1 : Source1
3 S2 : Source2
4 D : Drain
FUJI POWER MOS FET
Fig.1
Fig.1
Note:1. Dimension shown in ( ) is
reference values.
.
Special
specification
for customer
Trademark
Lot No.
Type name
No.
D
S2
G
S1
MARKING
OUT VIEW
DIMENSIONS ARE IN MILLIMETERS.
MARKING
CONNECTION
1 G : Gate
2 S1 : Source1
3 S2 : Source2
4 D : Drain
Item
Symbol
Ratings
Unit
Drain-source voltage
V
DS
200
V
DSX *5
170
Continuous drain current
I
D
Tc=25C
30
Ta=25C
4.3 **
Pulsed drain current
I
D(puls]
120
Gate-source voltage
V
GS
30
Non-repetitive Avalanche current
I
AS *2
30
Maximum Avalanche Energy
E
AS *1
387
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
P
D
Tc=25C
135
Ta=25C
2.4
Operating and storage
T
ch
+150
temperature range
T
stg
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermalcharacteristics
2SK3597-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Item
Symbol Test Conditions
Zero gate voltage drain current I
DSS
V
DS
=200V V
GS
=0V
V
DS
=160V V
GS
=0V
V
GS
=30V
I
D
=15A V
GS
=10V
I
D
=15A V
DS
=25V
V
CC
=48V I
D
=15A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
nA
m
S
pF
nC
A
V
s
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
R
th(ch-a) **
channel to ambient
0.926
87.0
52.0
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250A V
GS
=0V
I
D
= 250A V
DS
=V
GS
T
ch
=25C
T
ch
=125C
V
DS
=0V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=100V
I
D
=30A
V
GS
=10V
L=100
H T
ch
=25C
I
F
=30A V
GS
=0V T
ch
=25C
I
F
=30A V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
V
A
A
A
V
A
mJ
kV/s
kV/s
W
C
C
200
3.0
5.0
25
250
10
100
50
66
12.5
25
1960
2940
260
390
18
27
20
30
17
26
53
80
19
29
51
76.5
15
22.5
16
24
30
1.10
1.65
0.19
1.4
-55 to +150
Outline Drawings
(mm)
Equivalent circuit schematic
Super FAP-G Series
*3 I
F
-I
D
, -di/dt=50A/s, Vcc BV
DSS
, Tch 150C
=
<
=
<
=
<
*1 L=689
H, Vcc=48V *2 Tch 150C
=
<
*4 V
DS
200V
<=
www.fujielectric.co.jp/denshi/scd
*5 V
GS
=-30V
** Surface mounted on 1000mm
2
, t=1.6mm FR-4 PCB(Drain pad area : 500mm
2
)
** Surface mounted on 1000mm
2
, t=1.6mm FR-4 PCB(Drain pad area : 500mm
2
)
G : Gate
S2 : Source
D : Drain
S1 : Source
2
Characteristics
2SK3597-01
FUJI POWER MOSFET
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C
ID=f(VDS):80s Pulse test,Tch=25C
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C
0
25
50
75
100
125
150
0
100
200
300
400
500
EAV [mJ]
starting Tch [
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=30A
0
2
4
6
8
10
12
0
20
40
60
80
100
120
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
200
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [
C]
0
25
50
75
100
125
150
0
1
2
3
4
5
Surface mounted on
1000mm
2
,t=1.6mm FR-4 PCB
(Drain pad area : 500mm
2
)
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [
C]
3
2SK3597-01
FUJI POWER MOSFET
VGS=f(Qg):ID=30A, Tch=25C
IF=f(VSD):80s Pulse test,Tch=25C
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100
120
140
160
180
200
RDS(on) [ m
]
Tch [
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=15A,VGS=10V
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
A
VGS(th) [V]
Tch [
C]
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
Vcc= 100V
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
RDS(on)=f(ID):80s Pulse test, Tch=25C
0
20
40
60
80
100
120
0.00
0.05
0.10
0.15
0.20
7.0V
6.5V
RDS(on) [
]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
4
2SK3597-01
FUJI POWER MOSFET
I
AV
=f(t
AV
):starting Tch=25C. Vcc=48V
A
valanche current I
AV
[A]
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
Maximum Avalanche Current Pulsewidth
t
AV
[sec]
t=f(ID):Vcc=48V, VGS=10V, RG=10
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0
1000
2000
3000
4000
5000
0
10
20
30
40
50
60
70
80
90
100
Rth(ch-a) [
C/W]
Drain Pad Area [mm
2
]
Thermal Resistance vs. Drain Pad area
t=1.6mm FR-4 PCB
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [C/W]
t [sec]
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