1
TO-220F
Item
Symbol
Ratings
Unit
Drain-source voltage
V
DS
900
V
DSX *5
900
Continuous drain current
I
D
9
Pulsed drain current
I
D(puls]
36
Gate-source voltage
V
GS
30
Repetitive or non-repetitive
I
AR *2
9
Maximum Avalanche Energy
E
AS *1
287.7
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
40
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
P
D
Ta=25C
2.16
Tc=25C
95
Operating and storage
T
ch
+150
temperature range
T
stg
Isolation Voltage
V
ISO *6
2
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermalcharacteristics
2SK3679-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Item
Symbol Test Conditions
Zero gate voltage drain current I
DSS
V
DS
=900V V
GS
=0V
V
DS
=720V V
GS
=0V
V
GS
=30V
I
D
=4.5A V
GS
=10V
I
D
=4.5A V
DS
=25V
V
CC
=600V I
D
=4.5A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
nA
S
pF
nC
A
V
s
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
1.316
58.0
C/W
C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250A V
GS
=0V
I
D
= 250A V
DS
=V
GS
T
ch
=25C
T
ch
=125C
V
DS
=0V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=450V
I
D
=9A
V
GS
=10V
L=6.51mH T
ch
=25C
I
F
=9A V
GS
=0V T
ch
=25C
I
F
=9A V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
V
A
A
V
A
mJ
kV/s
kV/s
W
C
C
kVrms
900
3.0
5.0
25
250
100
1.22
1.58
5
10
1100
1650
140
210
8
12
25
38
12
18
50
75
12
18
31
46.5
4.5
8
11
16.5
9
0.90
1.50
3.2
15.5
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Super FAP-G Series
*3 I
F
-I
D
, -di/dt=50A/s, Vcc BV
DSS
, Tch 150C
=
<
=
<
=
<
Gate(G)
Source(S)
Drain(D)
200304
*4 VDS 900V *5 V
GS
=-30V *6 t=60sec, f=60Hz
<=
*1 L=6.51mH, Vcc=90V, Tch=25C See to Avalanche Energy Graph *2 Tch 150C
=
<
2
Characteristics
2SK3679-01MR
FUJI POWER MOSFET
0
5
10
15
20
0
2
4
6
8
10
12
14
20V
7.0V
10V
8.0V
6.5V
6.0V
I
D
[A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80
s pulse test,Tch=25
C
VGS=5.5V
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
ID
[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80
s pulse test,VDS=25V,Tch=25
C
0.1
1
10
1
10
g
f
s [S
]
ID [A]
Typical Transconductance
gfs=f(ID):80
s pulse test,VDS=25V,Tch=25
C
0
2
4
6
8
10
12
14
1.1
1.2
1.3
1.4
1.5
1.6
1.7
7.0V
6.5V
RDS
(on
)
[
]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
s pulse test,Tch=25
C
10V
20V
8.0V
6.0V
VGS=5.5V
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
RD
S
(
o
n
) [
]
Tch [
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=4.5A,VGS=10V
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Allowable Power Dissipation
PD=f(Tc)
PD
[W
]
Tc [
C]
3
2SK3679-01MR
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
A
V
G
S(
th)
[V
]
Tch [
C]
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=9A,Tch=25
C
VGS [V
]
720V
450V
Vcc= 180V
10
0
10
1
10
2
10
-3
10
-2
10
-1
10
0
10
1
C [
n
F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.1
1
10
I
F
[A
]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
s pulse test,Tch=25
C
10
-1
10
0
10
1
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t [
n
s
]
ID [A]
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
I
AS
=4A
I
AS
=9A
I
AS
=6A
E
AS
[m
J]
starting Tch [
C]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=90V
4
2SK3679-01MR
FUJI POWER MOSFET
http://www.fujielectric.co.jp/denshi/scd/
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
C,Vcc=90V
A
v
ala
n
c
h
e C
u
r
r
e
n
t I
AV
[A]
t
AV
[sec]
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zt
h(c
h
-c
) [
C
/
W
]
t [sec]
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