1
Item
Symbol
Ratings
Unit Remarks
Drain-source voltage
V
DS
300
V
DSX
300
Continuous Drain Current
I
D
53
Pulsed Drain Current
I
D(puls]
212
Gate-Source Voltage
V
GS
30
Maximum Avalanche current
I
AR
53
Non-Repetitive
E
AS
1013.9
Maximum Avalanche Energy
Repetitive
E
AR
41
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dV
DS
/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
P
D
210
3.13
Operating and Storage
T
ch
+150
Temperature range
T
stg
Electrical characteristics (T
c
=25C unless otherwise specified)
Thermalcharacteristics
2SK3777-01R
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25C unless otherwise specified)
Item
Symbol Test Conditions
Zero Gate Voltage Drain Current I
DSS
V
DS
=300V V
GS
=0V
V
DS
=240V V
GS
=0V
V
GS
=30V
I
D
=26.5A V
GS
=10V
I
D
=26.5A V
DS
=25V
V
CC
=180V
I
D
=26.5A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
V
V
A
nA
m
S
pF
nC
V
ns
C
ns
Min. Typ. Max. Units
Thermal resistance
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
0.595
40.0
C/W
C/W
Symbol
BV
DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250A V
GS
=0V
I
D
= 250A V
DS
=V
GS
T
ch
=25C
T
ch
=125C
V
DS
=0V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=150V
I
D
=53A
V
GS
=10V
I
F
=53A V
GS
=0V T
ch
=25C
I
F
=53A V
GS
=0V
-di/dt=100A/s T
ch
=25C
V
V
A
A
V
A
mJ
mJ
kV/s
kV/s
W
C
C
300
3.0
5.0
25
250
100
58
72
12
24
3600
5475
610
915
30
45
40
60
58
87
82
123
10
15
80
120
30
45
25
38
1.20
1.50
420
5.0
-55 to +150
Outline Drawings
(mm)
www.fujielectric.co.jp/fdt/scd
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200406
V
GS
=-30V
Note *1
Note *2
Note *3
V
DS
300V
Note *4
Tc=25C
Ta=25C
=
<
Note *1:Tch 150C,Repetitive and Non-repetitive
Note *2:StartingTch=25C,I
AS
=22A,L=3.03mH,
V
CC
=48V,R
G
=50
EAS limited by maximum channel temperature
and avalanch current.
See to the `Avalanche Energy' graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the `Transient Theemal impedance'
graph
Note *4:I
F
-I
D
, -di/dt=50A/s,V
CC
BV
DSS
,Tch 150C
Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
=
<
=
<
=
<
=
<
2
Characteristics
2SK3777-01R
FUJI POWER MOSFET
0
25
50
75
100
125
150
0
100
200
300
Allowable Power Dissipation
PD=f(Tc)
PD
[W
]
Tc [
C]
0
5
10
0
20
40
60
80
100
120
7V
20V
10V
8V
6.5V
VGS=6.0V
ID
[
A
]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80
s pulse test,Tch=25
C
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
ID
[A
]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80
s pulse test,VDS=25V,Tch=25
C
0.1
1
10
100
0.1
1
10
100
g
f
s [S
]
ID [A]
Typical Transconductance
gfs=f(ID):80
s pulse test,VDS=25V,Tch=25
C
0
10
20
30
40
50
60
70
80
90
100
0.00
0.05
0.10
0.15
0.20
RDS
(o
n) [
]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
s pulse test,Tch=25
C
10V
20V
8V
7V
6.5V
VGS=6V
-50
-25
0
25
50
75
100
125
150
0.00
0.05
0.10
0.15
0.20
RD
S
(
o
n
)
[
]
Tch [
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=26.5A,VGS=10V
3
2SK3777-01R
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
A
VGS
(
th)
[V]
Tch [
C]
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=53A,Tch=25
C
V
G
S [V]
240V
150V
Vcc= 60V
10
-1
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
10
4
C [
p
F
]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
1000
IF
[
A
]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
s pulse test,Tch=25
C
10
-1
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
10
4
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=180V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t [n
s]
ID [A]
0
25
50
75
100
125
150
0
200
400
600
800
1000
1200
I
AS
=22A
I
AS
=32A
I
AS
=53A
EAV
[m
J
]
starting Tch [
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=53A
4
2SK3777-01R
FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
C,Vcc=48V
A
v
al
an
c
h
e
Cu
rre
nt
I
AV
[A]
t
AV
[sec]
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zt
h(c
h
-c
) [
C/
W
]
t [sec]
PDF 
ZIP