6MBI35S-140
IGBT Modules
IGBT MODULE ( S series)
1400V / 35A 6 in one-package
Features
Compact Package
P.C.Board Mount Module
Low V
CE
(sat)
Applications
Inverter for Motor drive
AC and DC Servo drive amplifier
Uninterruptible power supply
Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25C unless otherwise specified)
Item Symbol
Collector-Emitter voltage V
CES
Gate-Emitter voltage V
GES
Collector Continuous Tj=25C I
C
current Tj=75C
1ms Tj=25C I
C
pulse
Tj=75C
-I
C
1ms -I
C
pulse
Max. power dissipation (1 device) P
C
Operating temperature T
j
Storage temperature T
stg
Isolation voltage *1 V
is
Screw torque Mounting *
2
Rating
1400
20
50
35
100
70
35
70
240
+150
-40 to +125
AC 2500 (1min.)
3.5
Unit
V
V
A
A
A
A
W
C
C
V
Nm
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
on
t
r
t
r(i)
t
off
t
f
V
F
t
rr
1.0
0.2
5.5 7.2 8.5
2.4 2.75
3.0
4200
875
770
0.35 1.2
0.25 0.6
0.1
0.45 1.0
0.08 0.3
2.6 3.4
2.2
0.35
V
GE
=0V, V
CE
=1400V
V
CE
=0V, V
GE
=20V
V
CE
=20V, I
C
=35mA
Tj=25C V
GE
=15V, I
C
=35A
Tj=125C
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=800V
I
C
=35A
V
GE
=15V
R
G
=33
Tj=25C I
F
=35A, V
GE
=0V
Tj=125C
I
F
=35A
mA
A
V
V
pF
s
V
s
Electrical characteristics (at Tj=25C unless otherwise specified)
Thermal resistance characteristics
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Thermal resistance Rth(j-c)
Rth(c-f)*
2
0.52
0.90
0.05
IGBT
FWD
the base to cooling fin
C/W
C/W
C/W
*
2
:
This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
*1:All terminals should be connected together when isolation test will be done.
*2
:
Recommendable value : 2.5 to 3.5 Nm (M5)
1(Gu)
2(Eu)
3(Gx)
4(Ex)
5(Gv)
6(Ev)
7(Gy)
8(Ey)
9(Gw)
10(Ew)
11(Gz)
12(Ez)
13(P)
17(N)
16(U)
15(V)
14(W)
6MBI35S-140
IGBT Module
Characteristics
0
1
2
3
4
5
0
20
40
60
80
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25C (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
0
1
2
3
4
5
0
20
40
60
80
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125C (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
0
1
2
3
4
5
0
20
40
60
80
Tj= 25C
Tj= 125C
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
5
10
15
20
25
0
2
4
6
8
10
Ic= 17.5A
Ic= 35A
Ic= 70A
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25C (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0
5
10
15
20
25
30
35
100
1000
10000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25C
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0
100
200
300
400
0
200
400
600
800
1000
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=800V, Ic=35A, Tj= 25C
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
6MBI35S-140
IGBT Module
0
20
40
60
50
100
500
1000
ton
tr
toff
tf
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=800V, VGE=15V, Rg= 33ohm, Tj= 25C
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
0
20
40
60
50
100
500
1000
tf
tr
ton
toff
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=800V, VGE=15V, Rg= 33ohm, Tj= 125C
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
10
50
100
500
50
100
500
1000
5000
toff
ton
tr
tf
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=800V, Ic=35A, VGE=15V, Tj= 25C
Gate resistance : Rg [ohm]
Switching time : ton, tr, toff, tf [ nsec ]
0
20
40
60
0
2
4
6
8
10
12
14
Err(25C)
Eoff(25C)
Eon(25C)
Err(125C)
Eoff(125C)
Eon(125C)
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=800V, VGE=15V, Rg=33ohm
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
10
50
100
500
0
5
10
15
20
25
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=800V, Ic=35A, VGE=15V, Tj= 125C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [ohm]
Eon
Err
Eoff
0
200
400
600
800
1000
1200
1400
1600
0
20
40
60
80
100
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE=<15V, Rg=>33ohm, Tj=<125C
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
6MBI35S-140
IGBT Module
Outline Drawings, mm
107.5
1
93
0.3
69.6
0.3
93
0.3
16.02
15.24
15.24
15.24
15.24
4-6.1
0.3
2-5.5
0.3
45
1
41.91
32
0.3
27.6
0.3
11
+ 0.5
0
3.81
11.43 11.43 11.43 11.43 11.43
1.15
0.2
0.4
2.5
0.1
2.1
0.1
20.5
1
17
1
3.5
0.5
2.5
0.3
1.5
0.3
6.5
0.5
1
0.2
0.8
0.2
6
1.5
Section A-A
A
A
1
12
13
17
Shows theory dimensions
16.02
M623
0
1
2
3
4
0
20
40
60
80
Tj=25C
Tj=125C
Forward current vs. Forward on voltage (typ.)
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
0
10
20
30
40
50
60
10
100
300
Irr(125C)
Irr(25C)
trr(25C)
trr(125C)
Reverse recovery characteristics (typ.)
Vcc=800V, VGE=15V, Rg=33ohm
Forward current : IF [ A ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.001
0.01
0.1
1
0.01
0.1
1
3
Transient thermal resistance
Thermal resistanse : Rth(j-c) [ C/W ]
Pulse width : Pw [ sec ]
FWD
IGBT
mass : 180g
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