6MBI50UA-120
1200V / 50A 6 in one-package
Features
High speed switching
Voltage drive
Low inductance module structure
Applications
Inverter for Motor drive
AC and DC Servo drive amplifier
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*4
Resistance
B value
I
CES
I
GES
V
GE(th)
V
CE(sat)
(terminal)
V
CE(sat)
(chip)
C
ies
t
on
t
r
t
r(i)
t
off
t
f
V
F
(terminal)
V
F
(chip)
t
rr
R lead
R
B
1.0
200
4.5
6.5
8.5
2.00
2.35
2.25
1.75
2.10
2.00
6
0.36
1.20
0.21
0.60
0.03
0.37
1.00
0.07
0.30
1.85
2.15
1.95
1.60
1.90
1.70
0.35
4.1
5000
465
495
520
3305
3375
3450
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=20V
V
CE
=20V, I
C
=50mA
V
GE
=15V, I
C
=50A
V
CE
=10V, V
GE
=0V, f=1MHz
V
CC
=600V
I
C
=50A
V
GE
=15V
R
G
=22
V
GE
=0V
I
F
=50A
I
F
=50A
T=25C
T=100C
T=25/50C
mA
nA
V
V
nF
s
V
s
m
Electrical characteristics (at Tj=25C unless otherwise specified)
Thermal resistance characteristics
Thermal resistance
Contact Thermal resistance
0.45
0.73
0.05
IGBT
FWD
With thermal compound
C/W
C/W
C/W
*
1 :
All terminals should be connected together when isolation test will be done.
*
2 :
Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*
3
:Recommendable value : 2.5 to 3.5 Nm(M5)
Symbols Conditions
Characteristics Unit
Min.
Typ.
Max.
Rth(j-c)
Rth(j-c)
Rth(c-f)*
5
IGBT Module U-Series
*
5
:
This is the value which is defined mounting on the additional cooling fin with thermal compound.
Tj=25C
Tj=125C
Tj=25C
Tj=125C
Tj=25C
Tj=125C
Tj=25C
Tj=125C
*
4
:Biggest internal terminal resistance among arm.
Items Symbols
Conditions
Characteristics Unit
Min.
Typ.
Max.
Item
Symbol
Collector-Emitter voltage
V
CES
Gate-Emitter voltaga
V
GES
Collector current
I
C
I
C
p
-I
C
-I
C
pulse
Collector Power Dissipation
P
C
Junction temperature
T
j
Storage temperature
T
stg
Isolation voltage
between terminal and copper base *1
V
iso
between thermistor and others *2
Screw Torque Mounting *3
-
Rating
1200
20
75
50
150
100
50
100
275
+150
-40 to +125
2500
3.5
Unit
V
V
A
W
C
VAC
Nm
Conditions
Continuous
1ms
1 device
AC:1min.
Tc=25C
Tc=80C
Tc=25C
Tc=80C
Uninterruptible power supply
Industrial machines, such as Welding machines
Inverter
Thermistor
IGBT Module
Characteristics (Representative)
6MBI50UA-120
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125C / chip
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25C / chip
VGE=0V, f= 1M Hz, Tj= 25C
Vcc=600V, Ic=50A, Tj= 25C
0
25
50
75
100
125
0
1
2
3
4
5
Collector current : Ic [A]
Collector-Emitter voltage : VCE [V]
VGE=20V
15V
12V
10V
8V
0
25
50
75
100
125
0
1
2
3
4
5
Collector current : Ic [A]
Collector-Emitter voltage : VCE [V]
VGE=20V
15V
12V
10V
8V
0
25
50
75
100
125
0
1
2
3
4
5
Collector current : Ic [A]
Collector-Emitter voltage : VCE [V]
Tj=125C
Tj=25C
0
2
4
6
8
10
5
10
15
20
25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
Ic=100A
Ic=50A
Ic= 25A
0.1
1.0
10.0
100.0
0
10
20
30
Capacitance : Cies, Coes, Cres [ nF ]
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
100
200
300
Collector-Emitter voltage : VCE [ 200V/div ]
Gate - Emitter voltage : VGE [ 5V/div ]
Gate charge : Qg [ nC ]
0
VGE
VCE
IGBT Module
6MBI50UA-120
Switching loss vs. Gate resistance (typ.)
+VGE=15V,-VGE <= 15V, RG >= 22 ,Tj <= 125C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=15V, Rg=22, Tj= 25C
Vcc=600V, Ic=50A, VGE=15V, Tj= 25C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=15V, Rg=22, Tj=125C
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=15V, Rg=22
Vcc=600V, Ic=50A, VGE=15V, Tj= 125C
Reverse bias safe operating area (max.)
10
100
1000
10000
0
25
50
75
100
Switching time : ton, tr, toff, tf [ nsec ]
ton
toff
tr
tf
10
100
1000
10000
0
25
50
75
100
Switching time : ton, tr, toff, tf [ nsec ]
toff
ton
tr
tf
10
100
1000
10000
10
100
1000
Switching time : ton, tr, toff, tf [ nsec ]
tr
tf
toff
ton
0
2
4
6
8
10
0
25
50
75
100
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon(125C)
Eon(25C)
Eoff(125C)
Err(125C)
Err(25C)
Eoff(25C)
0
10
20
30
40
50
10
100
1000
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eoff
Err
Eon
0
25
50
75
100
125
0
400
800
1200
Collector current : Ic [ A ]
IGBT Module
6MBI50UA-120
Transient thermal resistance (max.)
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=15V, Rg=22
Forward current vs. Forward on voltage (typ.)
chip
Temperature characteristic (typ.)
0.1
1
10
100
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T emperature [C ]
Resistance : R [ k
]
0
25
50
75
100
125
0
1
2
3
4
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
Tj=125C
Tj=25C
10
100
1000
0
25
50
75
100
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Forward current : IF [ A ]
trr (125C)
trr (25C)
Irr (125C)
Irr (25C)
0.01
0.10
1.00
0.001
0.010
0.100
1.000
Thermal resistanse : Rth(j-c) [ C/W ]
Pulse width : Pw [ sec ]
FWD
IGBT
Outline Drawings, mm
M636
6MBI50UA-120
IGBT Module
Equivalent Circuit Schematic
( ) shows reference dimension.
U
V
W
1
2
3
4
5
6
7
8
9
10
11
12
13,14
15,16
19,20
21,22
17
18
23,24
25,26
27,28
U
V
W
1
2
3
4
5
6
7
8
9
10
11
12
13,14
15,16
19,20
21,22
17
18
23,24
25,26
27,28
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