IPM-R3 series
600V / 100A 6
in one-package
6MBP100RTB060
Features
Temperature protection provided by directly detecting the junction
temperature of the IGBTs
Low power loss and soft switching
High performance and high reliability IGBT with overheating protection
Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25C unless otherwise specified)
Symbol Rating Unit
Min. Max.
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current DC
1ms
Duty=72.3%
Collector power dissipation
One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)
V
DC
V
DC(surge)
V
SC
V
CES *1
I
C
I
CP
-I
C *2
P
C *3
T
j
V
CC *4
V
in *5
I
in
V
ALM *6
I
ALM *7
T
stg
T
opr
V
iso *8
Item
0
0
200
0
-
-
-
-
-
-0.5
-0.5
-
-0.5
-
-40
-20
-
-
-
450
500
400
600
100
200
100
347
150
20
Vcc+0.5
3
Vcc
20
125
100
AC2.5
3.5 *
9
3.5 *
9
V
V
V
V
A
A
A
W
C
V
V
mA
V
mA
C
C
kV
Nm
Nm
*1 : Vces shall be applied to the input voltage between terminal P and U or V or W, N and U or V or W.
*2 : 125
C/FWD Rth(j-c)/(Ic x V
F
MAX)=125/0.665/(100 x 2.6)x100=72.3%
*3 :
Pc=125
C/IGBT Rth(j-c)=125/0.36=347W [Inverter]
*4 : Vcc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*5 : Vin shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*6 : V
ALM
shall be spplied to the voltage between terminal No. 16 and 10.
*7 : I
ALM
shall be applied to the input current to terminal No. 16.
*8 : 50Hz/60Hz sine wave 1 minute.
*9 : Recommendable Value : 2.5 to 3.0 Nm
Fig.1 Measurement of case temperature
6MBP100RTB060
IGBT-IPM
Control circuit
Item Symbol Condition Min. Typ. Max. Unit
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
Input zener voltage
Alarm signal hold time
Limiting resistor for alarm
Switching Trequency : 0 to 15kHz
Tc=-20 to 125C Fig.7
ON
OFF
Rin=20k ohm
Tc=-20C Fig.2
Tc=25C Fig.2
Tc=125C Fig.2
I
ccp
I
CCN
V
in(th)
V
Z
t
ALM
R
ALM
-
-
1.00
1.25
-
1.1
-
-
1425
-
-
1.35
1.60
8.0
-
2.0
-
1500
18
65
1.70
1.95
-
-
-
4.0
1575
mA
mA
V
V
V
ms
ms
ms
ohm
Protection Section ( Vcc=15V)
Turn-on time
Turn-off time
Reverse recovery time
Maximum Avalanche Energy
(A non-repetition)
ton VDC=300V,Tj=125C
toff IC=100A Fig.1, Fig.6
trr VDC=300V, IC=100A Fig.1, Fig.6
P
AV
Internal wiring inductance=50nH
Main circuit wiring inductace=54nH
Thermal characteristics( Tc=25C)
Item Symbol Min. Typ. Max. Unit
Junction to Case thermal resistance
Case to fin thermal resistance with compound
Rth(j-c)
Rth(j-c)
Rth(c-f)
-
-
0.36
-
-
0.665
-
0.05 -
C/W
C/W
C/W
INV IGBT
FWD
Item Symbol Min. Typ. Max. Unit
DC Bus Voltage
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
V
DC
V
CC
-
Recommendable value
Over Current Protection Level of Inverter circuit
Over Current Protection Delay time
SC Protection Delay time
IGBT Chip Over Heating
Over Heating Protection Hysteresis
Over Heating Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Electrical characteristics (at Tc=Tj=25C, Vcc=15V unless otherwise specified.)
Main circuit
Item Symbol Condition Min. Typ. Max. Unit
INV
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
I
CES
V
CE(sat)
V
F
V
CE
=600V Vin terminal open.
Ic=100A
-Ic=100A
-
-
1.0
mA
-
-
2.3
V
-
1.8
-
-
-
2.6
V
-
1.6
-
1.2
-
-
s
-
-
3.6
-
-
0.3
100
-
-
mJ
Terminal
Chip
Terminal
Chip
I
OC
t
DOC
t
SC
T
jOH
T
jH
T
COH
T
CH
V
UV
V
H
Tj=125C
Tj=125C
Tj=125C Fig.4
surface of IGBT chips
VDC=0V, Ic=0A, Case temperature
150
-
-
-
5
-
-
-
8
150
- -
-
20
-
110
-
125
-
20
-
11.0
-
12.5
0.2
0.5
-
A
s
s
C
C
C
V
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Common mode rectangular noise
Common mode lightning surge
Pulse width 1s, polarity ,10minuets
Judge : no over-current, no miss operating
Rise time 1.2s, Fall time 50s
Interval 20s, 10 times
Judge : no over-current, no miss operating
2.0
-
-
5.0
-
-
Item Symbol Condition Min. Typ. Max. Unit
Item Condition Min. Typ. Max. Unit
kV
kV
-
-
400 V
13.5
15.0
16.5 V
2.5
-
3.0 Nm
Item Symbol Min. Typ. Max. Unit
Weight
Weight Wt - 450 - g
*9 : (For 1 device, Case is under the device)
6MBP100RTB060
IGBT-IPM
Vin
Ic
Vin(th)
Vin(th)
ton
toff
trr
on
90%
50%
90%
10%
Figure 1. Switching Time Waveform Definitions
/Vin
Vge (Inside IPM)
Fault (Inside IPM)
/ALM
on
on
off
off
Gate on
Gate off
normal
alarm
tALM>Max.
tALM>Max.
tALM
2ms(typ.)
Fault : Over-current, Over-heat or Under-voltage
Figure 2. Input / Output Timing Diagram
Ic
I
ALM
I
ALM
I
ALM
Ic
Ic
tsc
Figure. 4 Definition of tsc
DC
15V
DC
15V
VccU
VinU
GNDU
20k
20k
Vcc
VinX
GND
P
U
V
W
N
CT
AC200V
Noise
4700p
Cooling
Fin
Earth
+
Sw1
Sw2
Figure 5. Noise Test Circuit
Vcc
20k
Vin
GND
P
IPM L DC
300V
Ic
N
+
DC
15V
HCPL-
4504
Icc Vcc P
I PM U
DC Vin
15V V
P.G W
+8V fsw GND
N
Figure 6. Switching Characteristics Test Circuit
Figure 7. Icc Test Circuit
6MBP100RTB060
IGBT-IPM
Block diagram
Outline drawings, mm
Mass : 450g
VccU 3
VinU 2
GNDU 1
VccV 6
VinV 5
GNDV 4
VccW 9
VinW 8
GNDW 7
Vcc 11
VinX 13
GND 10
VinY 14
VinZ 15
12
ALM 16
P
U
V
W
B
N
Pre-driver include following functions
1 Amplifier for drive
2 Short circuit protection
3 Under voltage lockout circuit
4 Over current protection
5 IGBT chip over heating protection
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
R
ALM
1.5k
Over heating protection
circuit
NC
NC
IGBT-IPM
Characteristics
Control circuit characteristics (Respresentative)
Power supply current vs. Switching frequency
0 5 10 15 20 25
Switching frequency fsw (kHz)
12 13 14 15 16 17 18
Power supply voltage Vcc (V)
Power supply current Icc (mA)
Input signal threshold voltage
Vin (
ON
), Vin (
OFF
), (V)
Input signal threshold voltage
vs. Power supply voltage
14
12
10
8
6
4
2
0
Under voltage V
UVT
(V)
Under voltage vs. Junction temperature
Undervoltage hysterisis V
H
(V)
Under voltage hysterisis vs. Junction temperature
Alarm hold time t
ALM
(msec.)
Alarm hold time vs. Power supply voltage
Overheating protection T
COH
,T
jOH
(
C
)
OH hysterisis T
CH
,T
jH
(
C)
Overheating characteristics T
COH
,T
jOH
,T
CH
,T
jH
vs. V
CC
Tc=125C
20 40 60 80 100 120 140
Junction temperature Tj (
C
)
12 13 14 15 16 17 18
Power supply voltage Vcc (
V
)
N-side
P-side
60
50
40
30
20
10
0
Tj=25C
Tj=125C
2.5
2.0
1.5
1.0
0.5
0
1.0
0.8
0.6
0.4
0.2
0
3.0
2.5
2.0
1.5
1.0
0.5
0
200
150
100
50
0
6MBP100RTB060
20 40 60 80 100 120 140
Junction temperature Tj (
C
)
12 13 14 15 16 17 18
Power supply voltage Vcc (
V
)
6MBP100RTB060
IGBT-IPM
Collector current vs. Collector-Emitter voltage
Collector current Ic (A)
Collector current vs. Collector-Emitter voltage
Collector current Ic (A)
Forward current vs. Forward voltage
(Chip)
Forward current I
F
(A)
0 0.5 1 1.5 2 2.5
Foeward voltage V
F
(V)
150
100
50
0
Tj=25C(Chip)
120
100
80
60
40
20
0
Tj=25C(Terminal)
Collector current vs. Collector-Emitter voltage
Collector current Ic (A)
Tj=125C(Chip)
Collector current vs. Collector-Emitter voltage
Collector current Ic (A)
Tj=125C(Terminal)
Forward current vs. Forward voltage
(Terminal)
Forward current I
F
(A)
0 0.5 1 1.5 2 2.5 3
Collector-Emitter voltage V
CE
(V)
0 0.5 1 1.5 2 2.5 3
Collector-Emitter voltage V
CE
(V)
150
100
50
0
0 0.5 1 1.5 2 2.5
Foeward voltage V
F
(V)
0 0.5 1 1.5 2 2.5 3
Collector-Emitter voltage V
CE
(V)
120
100
80
60
40
20
0
0 0.5 1 1.5 2 2.5 3
Collector-Emitter voltage V
CE
(V)
120
100
80
60
40
20
0
120
100
80
60
40
20
0
Main circuit characteristics (Respresentative)
6MBP100RTB060
IGBT-IPM
Transient thermal resistance
1
0.1
0.01
Thermal resistance Rth(j-c)
(C/W
)
Reverse biased safe operating area
Collector current Ic (A)
0 20 40 60 80 100 120 140 160
Case temperature Tc (
C
)
Collector power dissipation Pc (
W
)
Power derating for FWD (per device)
Collector power dissipation Pc (W)
0 100 200 300 400 500 600 700
Collector-Emitter voltage V
CE
(V)
300
250
200
150
100
50
0
<=
Vcc=15V, Tj
125C
Power derating for IGBT (per device)
Switching loss Eon,Eoff, Err (mJ/cycle)
10
8
6
4
2
0
0 20 40 60 80 100 120
Collector current I
C
(A)
Switching Loss vs. Collector current
Edc=300V, Vcc=15V, Tj=25C
Switching loss Eon,Eoff, Err (mJ/cycle)
Switching Loss vs. Collector current
Edc=300V, Vcc=15V, Tj=125C
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Case temperature Tc (
C
)
400
350
300
250
200
150
100
50
0
10
8
6
4
2
0
0 20 40 60 80 100 120
Collector current I
C
(A)
0.001 0.01 0.1 1
Pulse width Pw (sec.)
6MBP100RTB060
IGBT-IPM
20 40 60 80 100 120 140 160
Collector current Ic (
A
)
Switching time ton,toff,tf (
nsec.
)
10000
1000
100
10
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=25C
Reverse recovery current Irr (A) Reverse recovery time trr (nsec.)
Reverse recovery characteristics
trr, Irr, vs. I
F
100
10
1
20 40 60 80 100 120 140 160
Foeward current I
F
(A)
Switching time ton,toff,tf (
nsec.
)
10000
1000
100
10
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=125C
20 40 60 80 100 120 140 160
Collector current Ic (
A
)
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