7MBR 25SA-120
IGBT PIM
1200V
6x25A+Chopper
Power Integrated Module (PIM)
I
I
I
I Features
NPT-Technology
Solderable Package
Square SC SOA at 10 x I
C
High Short Circuit Withstand-Capability
Small Temperature Dependence of the Turn-Off
Switching Loss
Low Losses And Soft Switching
I
I
I
I Equivalent Circuit
I
I
I
I Outline Drawing
I
I
I
I Absolute Maximum Ratings
( T
c
=25C)
Items
Symbols
Test Conditions
Ratings
Units
Collector-Emitter Voltage
V
CES
1200
Gate -Emitter Voltage
V
GES
20
V
I
C
Continuous
25C / 80C
35 / 25
Collector Current
I
C PULSE
1ms
25C / 80C
70 / 50
A
-I
C PULSE
25
Inv
e
rter
Collector Power Dissipation
P
C
1 device
180
W
Repetitive Peak Reverse Voltage
V
RRM
1600
V
Average Output Current
I
O
50Hz/60Hz sinus wave
25
Surge Current
(Non Repetitive)
I
FSM
260
A
Rectifier
I
2
t
(Non Repetitive)
T
j
=150C, 10 ms,
sinus wave
338
A
2
s
Collector-Emitter Voltage
V
CES
1200
Gate Emitter Voltage
V
GES
20
V
I
C
Continuous
25C / 80C
25 / 15
Collector Current
I
C PULSE
1ms
25C / 80C
50 / 30
A
Collector Power Dissipation
P
C
1 device
110
W
Brake
Choppe
r
Repetitive Peak Reverse Voltage
V
RRM
1200
V
Operating Junction Temperature
T
j
+150
Storage Temperature
T
Stg
-40
+125
C
Isolation Voltage
V
ISO
A.C. 1min.
2500
V
Mounting Screw Torque*
3.5
Nm
Note: *:Recommendable Value; 2.5
3.5 Nm (M5)
7MBR 25SA-120
IGBT PIM
1200V
6x25A+Chopper
I
I
I
I Electrical Characteristics
( T
j
=25C )
Items
Symbols
Test Conditions
Min. Typ. Max. Units
Zero Gate Voltage Collector Current
I
CES
V
GE
=0V V
CE
=1200V
1.0
mA
Gate-Emitter Leackage Current
I
GES
V
CE
=0V V
GE
=
20V
200
nA
Gate-Emitter Threshold Voltage
V
GE(th)
V
GE
=20V I
C
=25mA
5.5
7.2
8.5
V
GE
=15V
Chip
2.1
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 25A
Terminal
2.2
2.7
Input Capacitance
C
ies
f=1MHz, V
GE
=0V, V
CE
=10V
3000
pF
t
on
V
CC
= 600V
0.35
1.2
Turn-on Time
t
r,x
I
C
= 25A
0.25
0.6
t
r,i
V
GE
=
15V
0.10
t
off
R
G
= 51
0.45
1.0
Turn-off Time
t
f
Inductive Load
0.08
0.3
IG
BT
s
Chip
2.3
Diode Forward On-Voltage
V
F
I
F
=25A
Terminal
2.4
3.2
V
Inv
e
rter
FRD
Reverse Recovery Time
t
rr
I
F
=25A
350
ns
Chip
1.1
Forward Voltage
V
FM
I
F
=25A
Terminal
1.2
1.5
V
Rect
if
ier
Reverse Current
I
RRM
V
R
=1600V
1.0
mA
Zero Gate Voltage Collector Current
I
CES
V
GE
=0V V
CE
=1200V
1.0
mA
Gate-Emitter Leackage Current
I
GES
V
CE
=0V V
GE
=
20V
200
nA
Collector-Emitter Saturation Voltage
V
CE(sat)
V
GE
=15V
Chip
2.10
I
C
=15A
Terminal
2.20
2.6
V
t
on
V
CC
= 600V
0.35
1.2
Turn-on Time
t
r,x
I
C
= 15A
0.25
0.6
t
off
V
GE
=
15V
0.45
1.0
Turn-off Time
t
f
R
G
= 82
0.08
0.3
s
Brake Chopper
Reverse Current
I
RRM
V
R
=1200V
1.0
mA
T= 25C
5000
Resistance
R
T=100C
465
495
520
NT
C
B Value
B
T=25 / 50C
3305
3375
3450
K
I
I
I
I Thermal Characteristics
Items
Symbols
Test Conditions
Min. Typ. Max. Units
Inverter IGBT
0.69
Inverter FRD
1.30
Brake IGBT
1.14 C/W
Thermal Resistance (1 device)
R
th(j-c)
Rectifier Diode
0.90
Contact Thermal Resistance
R
th(c-f)
With Thermal Compound
0.05
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