7MBR 50SA-060
IGBT PIM
600V
6x50A+Chopper
Power Integrated Module (PIM)
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Features
PT-Technology
Solderable Package
High Short Circuit Withstand-Capability
Small Temperature Dependence of the Turn-Off
Switching Loss
Low Losses And Soft Switching
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Equivalent Circuit
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Outline Drawing
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Absolute Maximum Ratings
( T
c
=25C)
Items
Symbols
Test Conditions
Ratings
Units
Collector-Emitter Voltage
V
CES
600
Gate -Emitter Voltage
V
GES
20
V
I
C
Continuous
50
Collector Current
I
C PULSE
1ms
100
A
-I
C PULSE
50
Inverter
Collector Power Dissipation
P
C
1 device
200
W
Repetitive Peak Reverse Voltage
V
RRM
800
V
Average Output Current
I
O
50Hz/60Hz sinus wave
50
Surge Current
(Non Repetitive)
I
FSM
350
A
Rectifier
I
2
t
(Non Repetitive)
T
j
=150C, 10 ms,
sinus wave
613
A
2
s
Collector-Emitter Voltage
V
CES
600
Gate Emitter Voltage
V
GES
20
V
I
C
Continuous
30
Collector Current
I
C PULSE
1ms
60
A
Collector Power Dissipation
P
C
1 device
120
W
Brake
Chopper
Repetitive Peak Reverse Voltage
V
RRM
600
V
Operating Junction Temperature
T
j
+150
Storage Temperature
T
Stg
-40
+125
C
Isolation Voltage
V
ISO
A.C. 1min.
2500
V
Mounting Screw Torque*
3.5
Nm
Note: *:Recommendable Value; 2.5
3.5 Nm (M5)
7MBR 50SA-060
IGBT PIM
600V
6x50A+Chopper
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Electrical Characteristics
( T
j
=25C )
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
Zero Gate Voltage Collector Current
I
CES
V
GE
=0V V
CE
=600V
1.0
mA
Gate-Emitter Leackage Current
I
GES
V
CE
=0V V
GE
=
20V
200
nA
Gate-Emitter Threshold Voltage
V
GE(th)
V
GE
=20V I
C
=50mA
5.5
7.8
8.5
V
GE
=15V
Chip
1.8
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 50A
Terminal
1.95
2.40
Input Capacitance
C
ies
f=1MHz, V
GE
=0V, V
CE
=10V
5000
pF
t
on
V
CC
= 300V
0.45
1.2
Turn-on Time
t
r,x
I
C
= 50A
0.25
0.6
t
r,i
V
GE
=
15V
0.08
t
off
R
G
= 51
0.40
1.0
Turn-off Time
t
f
Inductive Load
0.05
0.35
IGBT
s
Chip
1.75
Diode Forward On-Voltage
V
F
I
F
=50A
Terminal
1.9
2.6
V
Inverter
FRD
Reverse Recovery Time
t
rr
I
F
=50A
300
ns
Chip
1.1
Forward Voltage
V
FM
I
F
=50A
Terminal
1.2
1.5
V
Rectifier
Reverse Current
I
RRM
V
R
=800V
1.0
mA
Zero Gate Voltage Collector Current
I
CES
V
GE
=0V V
CE
=600V
1.0
mA
Gate-Emitter Leackage Current
I
GES
V
CE
=0V V
GE
=
20V
200
nA
Collector-Emitter Saturation Voltage
V
CE(sat)
V
GE
=15V
Chip
1.80
I
C
=30A
Terminal
1.95
2.4
t
on
V
CC
= 300V
0.45
1.2
Turn-on Time
t
r,x
I
C
= 30A
0.25
0.6
t
off
V
GE
=
15V
0.40
1.0
Turn-off Time
t
f
R
G
= 82
0.05
0.35
Brake Chopper
Reverse Current
I
RRM
V
R
=600V
1.0
mA
T= 25C
5000
Resistance
R
T=100C
465
495
520
NTC
B Value
B
T=25 / 50C
3305
3375
3450
K
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Thermal Characteristics
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
Inverter IGBT
0.63
Inverter FRD
1.33
Brake IGBT
1.04
C/W
Thermal Resistance (1 device)
R
th(j-c)
Rectifier Diode
2.42
Contact Thermal Resistance
R
th(c-f)
With Thermal Compound
0.05
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