ESAD25M(C,N,D)
(15A)
(200V to 400V / 15A)
FAST RECOVERY DIODE
Outline drawings, mm
Features
Insulated package by fully molding
High voltage by mesa design
High reliability
Applications
High speed switching
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Isolating voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
Viso
I
O
I
FSM
T
j
T
stg
Conditions
120
-40 to +150
-40 to +150
Unit
V
V
V
A
A
C
C
Electrical characteristics (Ta=25C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Reverse recovery time
Thermal resistance
Symbol
V
FM
I
RRM
t
rr
R
th(j-c)
Conditions
I
FM
=8.0A
V
R
=V
RRM
I
F
=0.1A, I
R
=0.1A
Junction to case
Max.
1.3
0.1
0.4
2.5*
Unit
V
mA
s
C/W
Terminals-to-case, AC.1 min.
Square wave, duty=1/2, Tc=98C
Sine wave 10ms
Rating
-02 -04
200 400
250 450
1500
15*
Connection diagram
*
Average forward current of centertap full wave connection
ESAD25M- C
ESAD25M- N
ESAD25M- D
1
1
1
2
2
2
3
3
3
1. Gate
2. Drain
3. Source
20 Min
15.5
5.5
9.3
5.45
5.45
5.5
3.2
21.5
1.6
3.5
1.1
2.1
2.3
0.6
0.2
0.2
0.3
0.3
0.3
0.3
0.2
0.2
0.2
0.3
0.3
+0.2
+0.3
+0.2
--0.1
0.2
3.2
JEDEC
EIAJ
ESAD25M(C,N,D)(15A)
(200V to 400V / 15A )
Characteristics
Forward characteristics
V
F
[V]
Reverse characteristics
V
R
[V]
I
F
[A]
I
R
[
A]
Surge capability
I
FSM
[A]
Forward power dissipation
I
o
[A]
W
F
[W]
0 2 4 6 8 10 12 14
30
10
5
3
1
0.5
0.3
0.1
0 0.6 0.8 1.0 1.2 1.4 1.6 1.8
300
100
30
10
3
1
0.3
0.1
Junction capacitance characteristics
C
j
[pF]
V
R
[V]
Output current-case temperature
14
12
10
8
6
4
2
0
T
c
[C]
0 5 10 15
I
o
[A]
100
50
30
10
5
3
5 10 30 50 100
1 3 5 10 30
0 100 200 300
300
100
50
30
10
150
100
50
0
[time] (at 50Hz)
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