1. Gate
2. Drain
3. Source
20 Min
15.5
5.5
9.3
5.45
5.45
5.5
3.2
21.5
1.6
3.5
1.1
2.1
2.3
0.6
0.2
0.2
0.3
0.3
0.3
0.3
0.2
0.2
0.2
0.3
0.3
+0.2
+0.3
+0.2
--0.1
0.2
3.2
ESAD39M(C,N,D)
(10A)
(400V to 600V / 10A)
FAST RECOVERY DIODE
Outline drawings, mm
Features
Insulated package by fully molding
Super high speed switching
Low V
F
in turn on
High reliability
Applications
High speed power switching
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Isolating voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
V
iso
I
O
I
FSM
T
j
T
stg
Conditions
50
-40 to +150
-40 to +150
Unit
V
V
V
A
A
C
C
Electrical characteristics (Ta=25C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Reverse recovery time
Thermal resistance
Symbol
V
FM
I
RRM
t
rr
R
th(j-c)
Conditions
I
FM
=4A
V
R
=V
RRM
I
F
=0.1A, I
R
=0.2A, I
rec
=0.05A
Junction to case
Max.
2.5
100
50
2.5
Unit
V
A
ns
C/W
Terminals-to-case, AC. 1min.
Square wave, duty=1/2, Tc=85C
Sine wave 10ms
Rating
-04 -06
400 600
400 600
10*
Connection diagram
*
Average forward current of centertap full wave connection
ESAD39M- C
ESAD39M- N
ESAD39M- D
1
1
1
2
2
2
3
3
3
JEDEC
EIAJ
1500
ESAD39M(C,N,D)(10A)
(400V to 600V / 10A )
Characteristics
Forward characteristics
V
F
[V]
Reverse characteristics
V
R
[V]
I
F
[A]
I
R
[A]
Surge capability
I
FSM
[A]
Forward power dissipation
I
o
[A]
W
F
[W]
0 200 400 600
100
10
1
0.1
Junction capacitance characteristics
C
j
[pF]
V
R
[V]
Output current-case temperature
T
c
[C]
I
o
[A]
3 5 10 30 50 100 300
1 3 5 10
0 2 4 6
140
120
100
80
60
100
50
30
10
5
30
10
5
3
1
0.5
0.3
0.1
20
15
10
5
0
0 2 4 6 8 10
0 2 4 6 8 10
100
50
30
10
5
3
1
[time] (at 50Hz)
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