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Электронный компонент: ESJA18

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ESJA18
(8kV/5mA)
HIGH VOLTAGE DIODE
Features
Ultra high speed switching
Low VF
High surge resisitivity for CRT discharge
High reliability design
Ultra small pakage
A p p l i c a t i o n s
Rectification for CRT display monitor high voltage
power supply (FBT:Flyback Transformer)
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Repetitive Peak
Reverse Voltage
Average Output Current
Surge Current
Junction Temperature
Allowable Operation Case Temperature
Symbols
V
RRM
I
O
I
FSM
T
j
Tc
Condition
10mS Sine-half wave
peak value
Ta=25C,Resistive Load
Ratings
8
5
0.5
120
100
-40 to +120
Units
kV
mA
A
C
C
C
Electrical Characteristics (Ta=25C Unless otherwise specified )
Items
Maximum Forward Voltage Drop
Maximum Reverse Current
Symbols
V
F
IR
Conditions
I
F
=10mA
V
R
=VRRM
Retings
28
2
Units
V
A
Maximum Reverse Recovery Time trr Ta=25C,I
F
=2mA,I
R
=4mA 0.045 s
Junction Capacitance Cj Ta=25C,V
R
=0V,f=1MHz 2 pF
Storage Temperature T
stg
ESJA18 is high reliability resin molded type high voltage
diode in small size package which is
sealed (a multilayed
mesa type
silicon chip) by epoxy resin.
Outline Drawings
ESJA18-08
Cathode Mark
Type Mark
27 min.
27 min.
o 2.5
o 0.5
Cathode Mark
Lot No.
6.5
ESJA18
(8kV/5mA)
Characteristics
0.01F
1k
ohm
100
ohm
150
k
ohm
D.U.T
OSCILLO SCOPE
I
F
=2mA
I
R
=4mA
0
1mA
trr
8
12
16
20
24
28
0
10
20
30
40
Tj= 25
o
C
Tj=100
o
C
Forward Characteristics
V
F
[V]
I
F
[mA]
0
2
4
6
8
10
12
1E-3
0.01
0.1
1
Tj=100
o
C
Tj= 25
o
C
Reverse Characteristics
I
R
[
A]
V
R
[kV]
0
50
100
150
200
0.0
0.2
0.4
0.6
0.8
1.0
Junction Capacitance Characteristics
Tj=25
o
C
f=1MHz
Cj
[pF]
V
Bias
[V]
0
4
8
12
16
20
24
28
0
20
40
60
80
100
Tj= 25
o
C
I
R
=100
A
N=100pcs.
N
[pcs.]
Avalanche Breakdown Voltage
V
AV
[kV]
0.00
0.02
0.04
0.06
0.08
0.10
0
20
40
60
80
100
120
Tj= 25
o
C
N=100pcs.
N
[pcs.]
Reverse Recovery Time
trr (
s)