YG812S04R
(10A)
(45V / 10A )
Features
Insulated package by fully molding
Low V
F
Super high speed switching
High reliability by planer design
Applications
High speed power switching
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Isolating viltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
Viso
I
o
I
FSM
T
j
T
stg
Conditions
Sine wave
10ms
250
-40 to +150
-40 to +150
Unit
V
V
V
A
A
C
C
Electrical characteristics (Ta=25C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Thermal resistance
Symbol
V
FM
I
RRM
R
th(j-c)
Conditions
I
FM
=10A
V
R
=V
RRM
Junction to case
Max.
0.6
2.0
2.5
Unit
V
mA
C/W
tw=500ns, duty=
1/40
Terminals to Case,
AC. 1min.
Square wave, duty=
1/2
Tc=124C
Rating
45
48
1500
10
SCHOTTKY BARRIER DIODE
Outline drawings, mm
Connection diagram
2
1
JEDEC
EIAJ SC-67
10.5
0.5
0.7
0.2
1.2
0.2
2.7
0.2
0.6
0.2
2.7
0.2
4.5
0.2
3.7
0.2
15
0.3
2.7
0.2
13
Min
6.3
3.2
+0.2
-0.1
5.08
0.4
1
2
YG812S04R (10A)
(45V / 10A )
Characteristics
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Tj=25C
Tj=100C
Tj=125C
Tj=150C
Forward Characteristic (typ.)
IF Forward Current (A)
VF Forward Voltage (V)
0
10
20
30
40
50
10
-3
10
-2
10
-1
10
0
10
1
10
2
Tj=25C
Tj=100C
Tj=125C
Reverse Characteristic (typ.)
Tj=150C
IR Reverse Current (mA)
VR Reverse Voltage (V)
0
2
4
6
8
10
0
2
4
6
8
10
12
14
Sine wave
=180C
Square wave
=60C
Square wave
=120C
Square wave
=180C
Per 1element
DC
Forward Power Dissipation
WF Forward Power Dissipation (W)
IO Average Forward Current (A)
360
Io
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
Reverse Power Dissipation
=180C
DC
PR Reverse Power Dissipation (W)
VR Reverse Voltage (V)
360
VR
0
2
4
6
8
10
12
14
16
80
90
100
110
120
130
140
150
160
Square wave
=120C
Sine wave
=180C
Square wave
=180C
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
=60
o
DC
Current Derating (Io-Tc)
TC Case Temperature (C)
IO Average Output Current (A)
VR=30V
360
Io
1
10
100
100
1000
10000
Junction Capacitance Characteristic (typ.)
CJ Junction Capacitance (pF)
VR Reverse Voltage (V)
YG812S04R (10A)
(45V / 10A )
1
10
100
10
100
1000
Surge Capability
I FSM Peak Half - Wave Current (A)
Number of Cycles at 50Hz
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
Transient Thermal Impedance
Transient Thermal Impedance (C/W)
T Time (s)
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