DS05-20883-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
16M (2M
8/1M
16) BIT
MBM29LV160TE/BE -
70/90/12
s
GENERAL DESCRIPTION
The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words
of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA
packages. The device is designed to be programmed in-system with the standard system 3.0 V V
CC
supply. 12.0
V V
PP
and 5.0 V V
CC
are not required for write or erase operations. The device can also be reprogrammed in
standard EPROM programmers.
The standard MBM29LV160TE/BE offers access times of 70 ns, 90 ns and 120 ns, allowing operation of high-
speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE),
write enable (WE), and output enable (OE) controls.
The MBM29LV160TE/BE is pin and command set compatible with JEDEC standard E
2
PROMs. Commands are
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the device is similar
to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29LV160TE/BE is programmed by executing the program command sequence. This will invoke the
Embedded Program
TM*
Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
TM*
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the device automatically times the erase pulse widths and
verifies proper cell margins.
Any individual sector is typically erased and verified in 1.0 second. (If already preprogrammed.)
within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word
at a time using the EPROM programming mechanism of hot electron injection.
(Continued)
s
PRODUCT LINE UP
Part No.
MBM29LV160TE/160BE
Ordering Part No.
V
CC
= 3.3 V
70
--
--
V
CC
= 3.0 V
--
90
12
Max. Address Access Time (ns)
70
90
120
Max. CE Access Time (ns)
70
90
120
Max. OE Access Time (ns)
30
35
50
+0.3 V
0.3 V
+0.6 V
0.3 V
MBM29LV160TE/BE
-70/90/12
2
(Continued)
The device also features a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29LV160TE/BE is erased when shipped from the factory.
The device features single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
CC
detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ
7
,
by the Toggle Bit feature on DQ
6
, or the RY/BY output pin. Once the end of a program or erase cycle has been
comleted, the device internally resets to the read mode.
The MBM29LV160TE/BE also has a hardware RESET pin. When this pin is driven low, execution of any Em-
bedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then
reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset
occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically
reset to the read mode and will have erroneous data stored in the address locations being programmed or
erased. These locations need re-writing after the Reset. Resetting the device enables the system's micropro-
cessor to read the boot-up firmware from the Flash memory.
Fujitsu's Flash technology combines years of Flash memory manufacturing experience to produce the highest
levels of quality, reliability, and cost effectiveness. The MBM29LV160TE/BE memory electrically erases all bits
within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word
at a time using the EPROM programming mechanism of hot electron injection.
* :
s
PACKAGES
48-pin plastic TSOP (I)
(FPT-48P-M19)
48-pin plastic CSOP
(LCC-48P-M03)
48-pin plastic TSOP (I)
(FPT-48P-M20)
48-pin plastic FBGA
(BGA-48P-M11)
Marking Side
Marking Side
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
MBM29LV160TE/BE
-70/90/12
3
s
FEATURES
0.23
m Process Technology
Single 3.0 V read, program and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP (I) (Package suffix: TN-Normal Bend Type, TR-Reversed Bend Type)
48-pin CSOP (Package suffix: PCV)
48-ball FBGA (Package suffix: PBT)
Minimum 100,000 program/erase cycles
High performance
70 ns maximum access time
Sector erase architecture
One 8K word, two 4K words, one 16K word, and thirty-one 32K words sectors in word mode
One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K bytes sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
Algorithms
Automatically programs and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
Low V
CC
write inhibit
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
Sector protection
Hardware method disables any combination of sectors from program or erase operations
Sector Protection Set function by Extended sector Protection command
Fast Programming Function by Extended command
Temporary sector unprotection
Temporary sector unprotection via the RESET pin
In accordance with CFI (Common Flash Memory Interface)
MBM29LV160TE/BE
-70/90/12
4
s
PIN ASSIGNMENTS
(Continued)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A
15
A
14
A
13
A
12
A
11
A
10
A
9
A
8
A
19
N.C.
WE
RESET
N.C.
N.C.
RY/BY
A
18
A
17
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
16
BYTE
V
SS
DQ
15
/A
-1
DQ
7
DQ
14
DQ
6
DQ
13
DQ
5
DQ
12
DQ
4
V
CC
DQ
11
DQ
3
DQ
10
DQ
2
DQ
9
DQ
1
DQ
8
DQ
0
OE
V
SS
CE
A
0
Standard Pinout
TSOP(I)
(Marking Side)
(FPT-48P-M19)
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
45
45
46
47
48
Reverse Pinout
(Marking Side)
(FPT-48P-M20)
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
17
A
18
RY/BY
N.C.
N.C.
RESET
WE
N.C.
A
19
A
8
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
0
CE
V
SS
OE
DQ
0
DQ
8
DQ
1
DQ
9
DQ
2
DQ
10
DQ
3
DQ
11
V
CC
DQ
4
DQ
12
DQ
5
DQ
13
DQ
6
DQ
14
DQ
7
DQ
15
/A
-1
V
SS
BYTE
A
16
MBM29LV160TE/BE
-70/90/12
5
(Continued)
(TOP VIEW)
(Marking side)
CSOP
(LCC-48P-M03)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
17
A
18
RY
/
BY
N.C.
N.C.
RESET
WE
N.C.
A
19
A
8
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
0
CE
V
SS
OE
DQ
0
DQ
8
DQ
1
DQ
9
DQ
2
DQ
10
DQ
3
DQ
11
V
CC
DQ
4
DQ
12
DQ
5
DQ
13
DQ
6
DQ
14
DQ
7
DQ
15
/
A
-1
V
SS
BYTE
A
16
A1
B1
C1
D1
E1
F1
G1
H1
A2
B2
C2
D2
E2
F2
G2
H2
A3
B3
C3
D3
E3
F3
G3
H3
A4
B4
C4
D4
E4
F4
G4
H4
A5
B5
C5
D5
E5
F5
G5
H5
A6
B6
C6
D6
E6
F6
G6
H6
Marking side
(TOP VIEW)
FBGA
(BGA-48P-M11)
A1
A
3
A2
A
7
A3
RY/BY
A4
WE
A5
A
9
A6
A
13
B1
A
4
B2
A
17
B3
N.C.
B4
RESET
B5
A
8
B6
A
12
C1
A
2
C2
A
6
C3
A
18
C4
N.C.
C5
A
10
C6
A
14
D1
A
1
D2
A
5
D3
N.C.
D4
A
19
D5
A
11
D6
A
15
E1
A
0
E2
DQ
0
E3
DQ
2
E4
DQ
5
E5
DQ
7
E6
A
16
F1
CE
F2
DQ
8
F3
DQ
10
F4
DQ
12
F5
DQ
14
F6
BYTE
G1
OE
G2
DQ
9
G3
DQ
11
G4
V
CC
G5
DQ
13
G6
DQ
15
/A
-1
H1
V
SS
H2
DQ
1
H3
DQ
3
H4
DQ
4
H5
DQ
6
H6
V
SS
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