Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Noise Figure
Associated Gain
Noise Figure
Associated Gain
Maximum Available Gain
Symbol
IDSS
15
30
60
35
45
-
-0.2
-
-0.7
-1.5
0.75
0.85
-3.0
-
-
9.5
10.5
-
9.5
10.5
-
9.5
10.5
-
-
0.9
Same as above,
Gain matched
1.1
VDS = 2V, IDS = 1mA
VDS = 2V, IDS = 10mA
VDS = 2V, VGS = 0V
IGS = -10A
VDS = 2V
IDS = 10mA
f = 12GHz
mA
mS
V
dB
-
1.1
1.35
dB
dB
11.0
12.0
-
dB
dB
dB
dB
V
gm
FHX04X
FHX05X
FHX06X
Vp
VGSO
NF
Gas
NF
Gas
NF
Gas
Ga(max)
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
C)
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
Channel to Case
-
220
300
C/W
Thermal Resistance
Rth
1
Edition 1.2
September 1999
FHX04X, FHX05X, FHX06X
GaAs FET & HEMT Chips
DESCRIPTION
The FHX04X, FHX05X, FHX06X are High Electron Mobility
Transistors (HEMT) intended for general purpose, low noise and high
gain amplifiers in the 2-18GHz frequency range. The devices are well
suited for telecommunication, DBS, TVRO, VSAT or other low noise
applications.
Fujitsu's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
3.5
-3.0
180
-65 to +175
175
V
V
mW
C
C
Pt*
Tstg
Tch
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
C)
*Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000
.
3. The operating channel temperature (Tch) should not exceed 80C.
FEATURES
Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04)
High Associated Gain: 10.5dB (Typ.)@f=12GHz
Lg
0.25m, Wg = 200m
Gold Gate Metallization for High Reliability
2
FHX04X, FHX05X, FHX06X
GaAs FET & HEMT Chips
NF & Gas vs. IDS
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
OUTPUT POWER vs. INPUT POWER
3
f=12GHz
VDS=2V
f=12GHz
VDS=2V
Gain Matched
IDS=15mA
Noise Figure Matched
IDS=10mA
2
1
0
12
10
8
7
9
11
10
20
30
-10
-5
0
5
1
2
3
4
Drain Current (mA)
Input Power (dBm)
Drain-Source Voltage (V)
Noise Figure (dB)
40
30
20
0
10
10
5
0
Drain Current (mA)
Output Power (dBm)
Associated Gain (dB)
-0.4V
-0.2V
Gas
NF
VGS = 0V
-0.6V
-0.8V
POWER DERATING CURVE
50
100
150
200
Ambient Temperature (
C)
200
150
100
0
0
50
Total Power Dissipation (W)
3
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
+90
0
-90
S21
S12
SCALE FOR |S21|
SCALE FOR |S
12
|
.02
.04
.06
.08
2
1
3
4
2
2
1
2
1
1
1
0.1 GHZ
0.1 GHZ
0.1 GHZ
0.1 GHZ
4
4
4
6
6
6
6
8
8
8
8
10
10
10
10
12
12
12
14
14
14
14
16
16
16
16
18
18
18
18
20
20
20
20
22
22
22
22
5
100
10
25
50
S-PARAMETERS
VDS = 2V, IDS = 10mA
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
1.000
-0.9
3.721
179.2
.001
89.5
.606
-0.4
500
.999
-4.7
3.717
176.0
.007
87.7
.605
-2.1
1000
.996
-9.5
3.705
172.0
.013
86.4
.604
-4.2
2000
.983
-18.8
3.658
164.1
.026
81.0
.598
-8.3
4000
.928
-37.0
3.489
149.0
.049
72.3
.576
-16.0
6000
.877
-54.0
3.255
135.1
.068
66.0
.547
-22.9
8000
.811
-59.3
2.999
122.5
.082
60.3
.516
-28.9
10000
.748
-84.5
2.750
111.2
.093
57.3
.485
-34.2
12000
.694
-98.2
2.521
101.1
.101
55.2
.457
-39.1
14000
.649
-111.1
2.319
92.0
.108
54.6
.432
-43.7
16000
.614
-123.2
2.142
83.5
.114
55.0
.410
-48.4
18000
.588
-134.6
1.988
75.9
.121
56.2
.391
-53.2
20000
.570
-145.4
1.853
68.8
.130
57.8
.373
-58.4
NOTE:* The data includes bonding wires.
n: number of wires
Gate n=2 (0.3mm length, 20um Dia Au wire)
Drain n=2 (0.3mm length, 20um Dia Au wire)
Source n=4 (0.3mm length, 20um Dia Au wire)
NOISE PARAMETERS
VDS=2V, IDS=10mA
Freq.
(GHz)
opt
(MAG) (ANG)
NFmin
(dB)
Rn/50
2
4
6
8
10
12
14
16
18
20
0.80
0.74
0.68
0.63
0.58
0.52
0.47
0.42
0.38
0.33
16
31
46
61
75
89
102
114
126
137
0.33
0.35
0.44
0.53
0.63
0.72
0.84
0.97
1.09
1.22
0.50
0.45
0.40
0.30
0.23
0.18
0.14
0.12
0.10
0.09
Ga (max) & |S21|2 vs. FREQUENCY
VDS=2V
IDS=10mA
Ga (max)
|S21|2
15
10
5
4
6
8 10 12
20
30
Frequency (GHz)
Gain (dB)
FHX04X, FHX05X, FHX06X
GaAs FET & HEMT Chips
Download S-Parameters, click here
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0999M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
4
CHIP OUTLINE
(Unit:
m)
90
75
90
450
20
154
350
20
75
75
50
50
Die Thickness:
100
20m
FHX04X, FHX05X, FHX06X
GaAs FET & HEMT Chips
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