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Электронный компонент: FHX06LG

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Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS
15
30
60
35
45
-
-0.2
-0.7
-1.5
-3.0
-
-
-
0.75
0.85
9.5
10.5
-
VDS = 2V, VGS = 0V
VDS = 2V, IDS =10mA
VDS = 2V, IDS =1mA
VDS = 2V,
IDS = 10mA,
f = 12GHz
IGS = -10
A
mA
mS
V
V
dB
dB
gm
Vp
VGSO
NF
FHX04LG
FHX05LG
FHX06LG
Gas
Noise Figure
Associated Gain
-
0.9
1.1
9.5
10.5
-
dB
dB
NF
Gas
Noise Figure
Associated Gain
-
1.1
1.35
9.5
10.5
-
dB
dB
NF
Gas
Condition
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
C)
Note: RF parameters are measured on a sample basis as follows:
Lot qty.
Sample qty.
Accept/Reject
1200
or
less
125
(0,1)
1201
to
3200
200
(0,1)
3201
to
10000
315
(1,2)
10001 or
over
500
(1,2)
AVAILABLE CASE STYLES: LG
Channel to Case
Thermal Resistance
-
300
400
C/W
Rth
1
Edition 1.1
July 1999
Item
Symbol
Unit
Drain-Source Voltage
VDS
V
3.5
Gate-Source Voltage
VGS
V
-3.0
Total Power Dissipation
Pt*
mW
180
Storage Temperature
Tstg
C
-65 to +175
Channel Temperature
Tch
C
175
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
C)
*Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000
.
3. The operating channel temperature (Tch) should not exceed 80
C.
FEATURES
Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04)
High Associated Gain: 10.5dB (Typ.)@f=12GHz
Lg
0.25m, Wg = 200m
Gold Gate Metallization for High Reliability
Cost Effective Ceramic Microstrip (SMT) Package
Tape and Reel Packaging Available
FHX04LG, 05LG, 06LG
Super Low Noise HEMT
DESCRIPTION
The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT)
intended for general purpose, low noise and high gain amplifiers in the 2-18GHz
frequency range.The devices are packaged in cost effective, low parasitic, hermetically
sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or other
low noise applications.
Fujitsu's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
2
FHX04LG, 05LG, 06LG
Super Low Noise HEMT
Gas
LG
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
OUTPUT POWER vs. INPUT POWER
f=12GHz
VDS=2V
Gain Matched
IDS=15mA
Noise Figure Matched
IDS=10mA
-10
-5
0
5
1
2
3
4
Input Power (dBm)
Drain-Source Voltage (V)
40
30
20
0
10
10
15
5
0
Drain Current (mA)
Output Power (dBm)
NF & Gas vs. TEMPERATURE
FHX04LG
f=12GHz
VDS=2V
IDS=10mA
100
200
0
300
400
Ambient Temperature (
K)
1.5
1.0
0.5
15
10
5
Noise Figure (dB)
NF & Gas vs. IDS
FHX04LG
3
f=12GHz
VDS=2V
VDS=2V
IDS=10mA
2
1
0
0
12
10
8
7
9
11
10
20
30
Drain Current (mA)
Noise Figure (dB)
Associated Gain (dB)
POWER DERATING CURVE
NF & Gas vs. FREQUENCY
FHX04LG
100
150
50
200
0
0
2
1
3
4
0
10
5
15
20
0
50
100
150
200
0
4
6
8
10 12
20
Ambient Temperature (
C)
Frequency (GHz)
Total Power Dissipation (mW)
Noise Figure (dB)
Associated Gain (dB)
VGS =0V
-0.2V
-0.6V
NF
Gas
NF
Gas
NF
-0.8V
-0.4V
3
TYPICAL NOISE FIGURE CIRCLE
f=12GHz
VDS=2V
IDS=10mA
opt=0.72
152
Rn/50=0.04
NFmin=0.75dB
FHX04LG
Freq.
(GHz)
(MAG)
(ANG)
NFmin
(dB)
Rn/50
opt
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
0.99
0.97
0.93
0.87
0.80
0.72
0.63
0.53
0.42
29.0
53.0
77.0
101.0
127.0
152.0
178.0
-156.0
-129.0
0.33
0.35
0.45
0.55
0.66
0.75
0.88
1.05
1.30
0.43
0.30
0.20
0.12
0.07
0.04
0.03
0.05
0.09
NOISE PARAMETERS
FHX04LG
VDS=2V, IDS=10MA
Ga(max) AND |S21| vs. FREQUENCY
FHX04LG
12
8
4
0
2
4
6 810
20
Frequency (GHz)
Gain (dB)
VDS=2V
IDS=10mA
|S21|
Ga(max)
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
opt
25
10
100
1.0dB
2.5 3.0
2.0
1.5
50
FHX04LG, 05LG, 06LG
Super Low Noise HEMT
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
+90
0
-90
S21
S12
SCALE FOR |S21|
SCALE FOR |S
12
|
0.04
0.08
0.12
0.16
2
1
3
4
1 GHz
1 GHz
1 GHz
1 GHz
18 GHz
16
14
12
12
14
16
10
10
8
8
6
6
4
4
2
16
16
14
12
12
10
10
8
8
6
6
4
4
2
2
2
18 GHz
18 GHz
18 GHz
100
250
25
50
S-PARAMETERS
FHX04LG
VDS = 2V, IDS = 10mA
FREQUENCY
S11
S21
S12
S22
(GHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
1.0
0.990
-19.3
4.232
162.1
0.016
75.1
0.576
-14.3
2.0
0.965
-37.5
4.115
144.1
0.030
64.8
0.563
-28.1
3.0
0.928
-55.2
3.923
127.4
0.042
53.3
0.546
-41.2
4.0
0.886
-72.1
3.737
110.9
0.052
41.9
0.525
-54.4
5.0
0.844
-88.3
3.518
95.6
0.059
32.2
0.505
-67.6
6.0
0.804
-103.4
3.302
80.8
0.063
23.9
0.489
-80.7
7.0
0.771
-117.4
3.090
66.4
0.066
16.6
0.484
-93.0
8.0
0.741
-129.6
2.876
53.1
0.065
11.5
0.487
-104.5
9.0
0.717
-140.3
2.703
40.7
0.066
4.9
0.497
-115.1
10.0
0.695
-150.8
2.592
28.6
0.065
-0.3
0.503
-124.9
11.0
0.675
-161.2
2.476
16.4
0.064
-3.0
0.517
-135.7
12.0
0.650
-171.5
2.374
4.2
0.064
-6.4
0.534
-145.8
13.0
0.630
178.9
2.277
-7.8
0.063
-9.3
0.552
-156.1
14.0
0.607
170.2
2.176
-19.1
0.064
-12.5
0.585
-164.6
15.0
0.585
161.8
2.144
-30.7
0.065
-16.4
0.617
-171.7
16.0
0.557
151.8
2.151
-43.2
0.066
-22.2
0.642
177.8
17.0
0.522
140.9
2.142
-56.9
0.067
-29.4
0.673
169.5
18.0
0.480
128.4
2.136
-71.2
0.068
-39.2
0.694
159.7
FHX04LG, 05LG, 06LG
Super Low Noise HEMT
Download S-Parameters, click here
5
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
0.5
(0.02)
1.0
(0.039)
1.3 Max
(0.051)
0.1
(0.004)
1.5
0.3
(0.059)
1.78
0.15
(0.07)
1.5
0.3
(0.059)
4.78
0.5
Case Style "LG"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source
3. Drain
4. Source
1.5
0.3
(0.059)
1.78
0.15
(0.07)
1.5
0.3
(0.059)
4.78
0.5
1
2
3
4
FHX04LG, 05LG, 06LG
Super Low Noise HEMT