Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Power-Added Efficiency
Thermal Resistance
Symbol
I
DSS
V
GSO
-
12
-
-
24
32
-1.0
-2.0
-3.5
-5
-
-
47.0
48.0
-
9.5
10.5
-
-
43
-
-
0.8
1.2
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 14.4A
V
DS
= 5V, I
DS
= 1.44A
I
GS
= -1.44mA
Channel to Case
V
DS
= 12V
f=1.96GHz
I
DS
= 4.0A
A
S
V
dB
dBm
V
C/W
%
gm
V
p
P
1dB
G
1dB
add
Drain Current
-
11.0
15.0
A
I
DSR
R
th
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
G.C.P.: Gain Compression Point
CASE STYLE: IQ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
Tc = 25C
V
V
W
C
C
V
GS
P
T
T
stg
T
ch
Condition
125
-65 to +175
+175
-5
15
Rating
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 78 and -32 mA respectively with
gate resistance of 25.
3. The operating channel temperature (Tch) should not exceed 145C.
1
FEATURES
Push-Pull Configuration
High Power Output: 60W (Typ.)
High PAE: 43% (Typ.)
Broad Frequency Range: 800 to 2000 MHz.
Suitable for class AB operation.
APPLICATIONS
Solid State Power Amplifier.
PCS/PCN Communication Systems.
Edition 1.7
December 1999
FLL600IQ-2
DESCRIPTION
The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and complexity
of highly linear, high power base station transmitting amplifiers. This new product is
uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain,
long term reliability and ease of use.
VDS = 12V
IDS = 4.0A
f = 1.96GHz
VDS = 12V
IDS = 4.0A
f = 1.96GHz
19
21
23
25
27
29
31
33
37
35
39
33
35
31
37
39
41
43
45
49
10
20
30
40
50
60
47
35
37
39
41
43
45
47
49
Input Power (dBm)
Output Power (dBm)
Pout
OUTPUT POWER & add vs. INPUT POWER
1.8
1.85
1.9
1.95
2.0
2.05
1.75
Frequency (GHz)
Output Power (dBm)
add
(%)
add
Pin=38dBm
30dBm
35dBm
25dBm
OUTPUT POWER vs. FREQUENCY
POWER DERATING CURVE
40
80
100
120
140
60
20
0
50
100
150
200
Case Temperature (C)
Total Power Dissipation (W)
FLL600IQ-2
2
FLL600IQ-2
3
-60
-56
-52
-48
-44
-40
-36
-32
-28
30
28
26
32
34
36
38
40
42
44
Total Output Power (dBm)
VDS = 12V
IDS = 4.0A
f = 1.96GHz
f = 5.0MHz
2-tone test
IMD (dBc)
OUTPUT POWER vs. IMD
IM5
IM3
S-PARAMETERS
VDS = 12V, IDS = 2A
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
1000
.952
169.0
.808
32.9
.004
-15.0
.893
178.0
1100
.934
166.3
.865
24.6
.006
-38.5
.903
177.9
1200
.911
163.3
.958
14.8
.006
-33.2
.905
177.9
1300
.872
159.4
1.098
3.0
.006
-44.6
.910
177.5
1400
.797
155.4
1.287
-12.2
.009
-73.9
.918
177.0
1500
.688
153.0
1.516
-32.7
.011
-81.3
.936
176.2
1600
.560
159.1
1.661
-58.7
.013
-111.7
.947
174.7
1700
.864
173.4
1.612
-86.1
.014
-138.7
.949
172.1
1800
.672
177.9
1.398
-110.1
.013
-164.6
.929
170.0
1900
.766
174.9
1.185
-128.8
.012
174.4
.913
168.9
2000
.822
170.1
1.021
-143.3
.011
162.0
.902
168.5
2100
.854
163.9
.906
-155.7
.011
149.4
.885
167.7
2200
.867
157.6
.832
-167.2
.010
134.5
.871
166.7
2300
.875
150.2
.800
-178.0
.012
119.7
.864
166.5
2400
.868
141.0
.792
170.4
.012
111.9
.846
165.5
2500
.865
132.9
.811
160.1
.012
103.1
.831
162.8
2600
.842
117.4
.867
145.8
.015
89.8
.812
162.0
2700
.807
93.4
.947
126.5
.020
65.6
.785
160.9
2800
.732
50.7
.997
101.3
.021
30.1
.770
160.5
2900
.561
-43.5
.814
59.2
.021
-26.3
.739
158.7
3000
.486
134.7
.450
100.9
.005
160.1
.712
158.4
Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used
to determine the calculated Push-Pull S-Parameter amplifier designs.
Download S-Parameters, click here
4
FLL600IQ-2
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1997 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0597M200
Case Style "IQ"
Metal-Ceramic Hermetic Package
Unit: mm (inches)
8.0
(0.315)
1.9
(0.075)
2.5 MIN.
(0.098)
2.5 MIN.
(0.098)
17.4
(0.685)
4-R1.3
(0.051)
16.4
(0.646)
0.2
0.15
6.0
(0.236)
0.2
20.4
(0.803)
0.2
24.0
(0.945)
0.2
0.2
0.2
0.13
2.4
(0.094)
5.5 Max.
(0.217)
0.1
(0.004)
2.0
(0.079)
1
2
5
4
3
1, 2: Gate
3: Source
4, 5: Drain
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
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