NOISE FIGURE & Gas vs. FREQUENCY
Frequency (GHz)
Gas (dB)
Noise Figure (dB)
10
1
0
2
3
4
5
6
7
8
9
10
0
-10
-5
-15
0
5
10
15
20
25
30
12
14
16
18
20
22
24
26
28
30
Gas
NF
VDD=5V, IDD=12mA
(ZS=ZL=50
)
(Tuned for
opt)
1
Edition 1.2
January 2000
FMM5701X
24GHz Low Noise Amplifier MMIC
DESCRIPTION
The FMM5701X is a LNA MMIC designed for applications in the
18-28GHz frequency range. This product is well suited for satellite
communications and radio link applications where low noise and high
gain is required.
Fujitsu's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Item
Drain Voltage
Gate Voltage
Storage Temperature
Channel Temperature
Symbol
VDD
VGG
7.0
-3.0
-65 to +175
+175
V
V
C
C
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
C)
FEATURES
Low Noise Figure: NF=1.4dB (Typ.) @ f=24GHz
High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz
Wide Frequency Band: 18-28GHz
Item
Symbol
V
DD
= 5V
I
D
=12mA
Noise Figure
NF
f=24GHz
f=24GHz
-
1.5
1.8
dB
12.0
13.5
-
dB
Associated Gain
Gas
Conditions (2)
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
C)
Note 1: RF parameters sample size 10pcs. criteria (accept/reject = (2/3)
Note 2: Tuned for
opt
2
FMM5701X
24GHz Low Noise Amplifier MMIC
BONDING LAYOUT
RF out and VDD
RF in and VGG
GND
GND
GND
Freq.
(GHz)
(MAG)
(ANG)
NFmin
(dB)
Rn
opt
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
0.793
0.670
0.582
0.526
0.492
0.475
0.468
0.464
0.458
0.441
0.408
0.352
0.266
0.212
0.202
13.4
26.9
38.5
54.4
69.1
84.7
101.6
120.1
140.4
162.9
-172.2
-144.5
-113.9
-88.5
-58.0
0.78
0.84
0.90
0.97
1.03
1.09
1.16
1.22
1.28
1.35
1.41
1.47
1.54
1.60
1.66
0.47
0.39
0.34
0.27
0.23
0.19
0.14
0.10
0.07
0.05
0.05
0.07
0.11
0.16
0.23
NOISE PARAMETERS
VDD=5V, IDD=12mA
S-PARAMETERS
VDD = 5V, IDS = 12mA
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
15000
.469
-131.8
8.289
130.9
.017
23.3
.350
-132.7
16000
.492
-137.9
7.642
115.7
.018
16.6
.330
-138.4
17000
.512
-145.8
6.987
101.5
.020
10.9
.311
-144.1
18000
.542
-153.9
6.487
87.3
.021
7.0
.296
-149.0
19000
.568
-162.7
5.950
73.6
.023
2.3
.287
-154.2
20000
.598
-172.5
5.456
60.1
.025
-3.6
.283
-160.2
21000
.615
178.2
5.027
47.5
.026
-7.5
.273
-165.6
22000
.640
168.3
4.634
34.5
.028
-10.9
.268
-170.8
23000
.663
158.5
4.258
22.0
.030
-15.1
.265
-176.5
24000
.683
148.6
3.919
9.9
.032
-17.9
.262
178.5
25000
.702
138.7
3.638
-2.2
.035
-21.1
.265
172.7
26000
.722
128.8
3.318
-14.3
.038
-27.0
.267
166.4
27000
.732
119.0
3.033
-25.1
.040
-28.3
.265
162.1
28000
.737
109.4
2.820
-35.8
.044
-31.7
.266
155.5
29000
.756
99.4
2.595
-47.7
.048
-37.4
.271
150.6
30000
.762
90.3
2.370
-57.4
.051
-40.3
.270
144.9
NOTE:*
The data includes bonding wires.
n: number of wires
RF IN
n=1 (0.3mm length, 25m Dia Au wire)
RF OUT n=1 (0.3mm length, 25m Dia Au wire)
GND n=6 (0.3mm length, 25m Dia Au wire)
Download S-Parameters, click here
4
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
CHIP OUTLINE
GND
GND
GND
RF out
RF in
95
80
80
110
100
25
40
40
95
520
100
25
25
25
25
10
450
195
195
195
80
80
60
60
Unit:
m
FMM5701X
24GHz Low Noise Amplifier MMIC
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