1N4151
SMALL SIGNAL DIODES
FEATURES
Silicon Epitaxial Planar Diode
Fast switching diode.
This diode is also available in other case
styles including the SOD-123
case with the type designation 1N4151W
and the Mini-MELF case with the type
designation LL4151.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS
Ratings at 25C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Reverse Voltage
V
R
50
Volts
Peak Reverse Voltage
V
RM
75
Volts
Rectified Current (Average)
Half Wave Rectification with Resist. Load
I
O
150
(1)
mA
at Tamb = 25 C and f
50 Hz
Surge Forward Current at t < 1s and T
j
= 25C
I
FSM
500
mA
Power Dissipation at Tamb = 25C
P
tot
500
(1)
mW
Junction Temperature
T
j
175
C
Storage Temperature Range
T
S
65 to +175
C
NOTES:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Dimensions in inches and (millimeters)
DO-35
m
in.
1.
083 (27.
5)
m
in.
1.
083 (27.
5)
m
a
x
.
.
150 (3.
8)
max. Y
Cathode
.020 (0.52)
Mark
max.
Y.079 (2.0)
1/4/99
Dimensions in inches and (millimeters)
1N4151
ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward Voltage
at I
F
= 50 mA
V
F
1.0
Volts
Leakage Current
at V
R
= 50 V
I
R
50
nA
at V
R
= 50 V, T
j
= 150 C
I
R
50
mA
Reverse Breakdown Voltage
Tested with 5
mA pulses
V
(BR)R
75
Volts
Capacitance
at V
F
= V
R
= 0 V
C
tot
2
pF
Reverse Recovery Time
from I
F
= 10 mA through I
R
= 10 mA to I
R
= 1 mA
t
rr
4
ns
from I
F
= 10 mA to I
R
= 1 mA, V
R
= 6 V, R
L
= 100
W
t
rr
2
ns
Thermal Resistance Junction to Ambient Air
R
QJA
350
(1)
C/W
Rectification Efficiency
at f = 100 MH
Z
, V
RF
= 2 V
hv
0.45
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature.
Rectification Efficiency Measurement Circuit
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