1N4151W
SMALL SIGNAL DIODES
FEATURES
Silicon Epitaxial Planar Diode
Fast switching diode.
This diode is also available in other
case styles including the SOD-123 case
with the type designation 1N4151W and the Mini-MELF
case with the type designation LL4151.
MECHANICAL DATA
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Reverse Voltage
V
R
50
V
Peak Reverse Voltage
V
RM
75
V
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 C and f
50 Hz
I
O
150
(1)
mA
Surge Forward Current at t < 1 s and T
j
= 25 C
I
FSM
500
mA
Power Dissipation at T
amb
= 25 C
P
tot
410
(1)
mW
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
65 to +150
C
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
1/4/99
Dimensions in inches and (millimeters)
SOD-123
.022 (0.55)
m
a
x
.
.
004 (0.
1)
.
112 (2.
85)
.
152 (3.
85)
.067 (1.70)
m
a
x
.
.
053 (1.
35)
min. .010 (0.25)
Cathode Mark
m
a
x
.
.
006 (0.
15)
Top View
.
140 (3.
55)
.
100 (2.
55)
.055 (1.40)
1N4151W
ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward Voltage
at I
F
= 50 mA
V
F
1.0
V
Leakage Current
at V
R
= 50 V
I
R
50
nA
at V
R
= 20 V, T
j
= 150C
I
R
50
mA
Reverse Breakdown Voltage
Tested with 5
mA pulses
V
(BR)R
75
V
Capacitance
at V
F
= V
R
= 0 V
C
tot
2
pF
Reverse Recovery Time
from I
F
= 10 mA through I
R
= 10 mA to I
R
= 1 mA
t
rr
4
ns
from I
F
= 10 mA to I
R
= 1 mA, V
R
= 6 V, R
L
= 100
W
t
rr
2
ns
Thermal Resistance Junction to Ambient Air
R
thJA
450
(1)
C/W
Rectification Efficiency
at f = 100 MHz, V
RF
= 2 V
hv
0.45
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature (SOD-123)
Rectification Efficiency Measurement Circuit
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