2N4401
SMALL SIGNAL TRANSISTORS (NPN)
FEATURES
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
As complementary type, the PNP
transistor 2N4403 is recommended.
On special request, this transistor is
also manufactured in the pin
configuration TO-18.
This transistor is also available in the
SOT-23 case with the type designation
MMBT4401
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
60
Volts
Collector-Emitter Voltage
V
CEO
40
Volts
Emitter-Base Voltage
V
EBO
6.0
Volts
Collector Current-Continuous
I
C
600
mA
Power Dissipation at T
A
=25
C
P
tot
625
mW
Derate above 25
C
5.0
mW/
C
Power Dissipation at T
C
=25
C
P
tot
1.5
W
Derate above 25
C
12
mW/
C
Thermal Resistance, Junction to Ambient Air
R
QJA
200
C/W
Thermal Resistance Junction to Case
R
QJC
83.3
C/W
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
55 to +150
C
0.181 (4.6)
m
i
n
.
0.492
(12.5
)
0.1
81 (4
.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
E
C
B
TO-92
2/17/99
Dimensions in inches and (millimeters)
ADVANCED INFORMATION ADVANCED INFORMATION
2N4401
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at I
C
= 0.1 mA, I
E
= 0
V
(BR)CBO
60
Volts
Collector-Emitter Breakdown Voltage
(1)
at I
C
= 1 mA, I
B
= 0
V
(BR)CEO
40
Volts
Emitter-Base Breakdown Voltage
at I
E
= 0.1 mA, I
C
= 0
V
(BR)EBO
6.0
Volts
Collector-Emitter Saturation Voltage
(1)
at I
C
= 150 mA, I
B
= 15 mA
V
CEsat
0.40
Volts
at I
C
= 500 mA, I
B
= 50 mA
V
CEsat
0.75
Volts
Base-Emitter Saturation Voltage
(1)
at I
C
= 150 mA, I
B
= 15 mA
V
BEsat
0.75
0.95
Volts
at I
C
= 500 mA, I
B
= 50 mA
V
BEsat
1.20
Volts
Collector Cutoff Current
I
CEX
100
nA
at V
EB
= 0.4 V, V
CE
= 35 V
Base Cutoff Current
at V
EB
= 0.4 V, V
CE
= 35 V
I
BEV
100
nA
DC Current Gain
at V
CE
= 1 V, I
C
= 0.1 mA
h
FE
20
at V
CE
= 1 V, I
C
= 1 mA
h
FE
40
at V
CE
= 1 V, I
C
= 10 mA
h
FE
80
at V
CE
= 1 V, I
C
= 150 mA
(1)
h
FE
100
300
at V
CE
= 2 V, I
C
= 500 mA
(1)
h
FE
40
Input Impedance
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
ie
1.0
15
k
W
Voltage Feedback Ratio
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
re
0.1 10
-4
8 10
-4
Current Gain-Bandwidth Product
at V
CE
= 10 V, I
C
= 20 mA, f = 100 MHz
f
T
250
MHz
Collector-Base Capacitance
at V
CB
= 5 V, I
E
=0, f=1.0 MH
Z
C
CBO
6.5
pF
Emitter-Base Capacitance
at V
EB
= 0.5 V, I
C
=0, f=1.0 MH
Z
C
EBO
30
pF
NOTES
(1) Pulse test: Pulse width 300
ms - Duty cycle 2%
2N4401
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Small Signal Current Gain
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
fe
40
500
Output Admittance
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
oe
1.0
30
mS
Delay Time (see fig. 1)
at I
C
= 150 mA, I
B1
= 15 mA, V
CC
=30V, V
BE
=2.0V
t
d
15
ns
Rise Time (see fig. 1)
at I
C
= 150 mA, I
B1
= 15 mA, V
CC
=30V, V
BE
=2.0V
t
r
20
ns
Storage Time (see fig. 2)
at I
B1
= I
B2
= 15 mA, V
CC
=30V, I
C
=150mA
t
s
225
ns
Fall Time (see fig. 2)
at I
B1
= I
B2
= 15 mA, V
CC
=30V, I
C
=150mA
t
f
30
ns
200
W
+30V
-4 V
< 2 ns
0
C * < 10 pF
S
C < 10 pF
S
*
200
W
1.0 to 100
ms, DUTY CYCLE 2%
1.0 to 100
ms, DUTY CYCLE 2%
+30V
+16 V
-2 V
1k
W
1k
W
Scope rise time < 4ns
*Total shunt capacitance of test jig,
connectors and oscilloscope
< 20 ns
0
+16 V
-14 V
SWITCHING TIME EQUIVALENT TEST CIRCUIT
FIGURE 1 - TURN-ON TIME
FIGURE 2 - TURN-OFF TIME
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