FEATURES
Schottky Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
DO-35
mi
n. 1.083 (
27.5)
mi
n. 1.083
(
2
7
.
5)
max
.
.
150 (
3
.8)
max.
Cathode
.020 (0.52)
Mark
max.
.079 (2.0)
Dimensions in inches and (millimeters)
Case: DO-35 Glass Case
Weight: approx. 0.13 g
4/98
BAT41
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
V
RRM
100
V
Forward Continuous Current at T
amb
= 25 C
I
F
100
1)
mA
Repetitive Peak Forward Current
at t
p
< 1 s, @ < 0.5, T
amb
= 25 C
I
FRM
350
1)
mA
Surge Forward Current
at t
p
= 10 ms, T
amb
= 25 C
I
SFM
750
1)
mA
Power Dissipation, T
amb
= 25 C
P
tot
400
1)
mW
Junction Temperature
T
j
125
C
Ambient Operating Temperature Range
T
amb
65 to +125
C
Storage Temperature Range
T
S
65 to +150
C
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
For general purpose applications
This diode featutres low turn-on voltage
and high breakdown voltage. This device
is protected by a PN junction guard ring
against excessive voltage, such as electro-
static discharges.
This diode is also available in a MiniMELF case
with type designation LL41.
ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
BAT41
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
tested with 100
A / 300
s Pulses
V
(BR)R
100
110
V
Forward Voltage
Pulse Test t
p
= 300
s
at I
F
= 1 mA
at I
F
= 200 mA
V
F
V
F
0.40
0.45
1.0
V
V
Leakage Current
Pulse Test t
p
= 300
s
at V
R
= 50 V, at T
j
= 25 C
at V
R
= 50 V, at T
j
= 100 C
I
R
I
R
100
20
nA
A
Capacitance
at V
R
= 1 V, f = 1 MHz
C
tot
2
pF
Reverse Recovery Time
from I
F
= 10 mA, to I
R
= 10 mA to I
R
= 1 mA
R
L
= 100 Ohm
t
rr
5
ns
Thermal Resistance
Junction to Ambient Air
R
thJA
300
1)
K/W
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
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