Document Outline
- FEATURES
- DESCRIPTION
- APPLICATIONS
- LIMITING VALUES
- ELECTRICAL CHARACTERISTICS
- THERMAL CHARACTERISTICS
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DEFINITIONS
DATA SHEET
Product specification
Supersedes data of April 1996
1996 Sep 16
DISCRETE SEMICONDUCTORS
BAV10
High-speed diode
M3D176
1996 Sep 16
2
Philips Semiconductors
Product specification
High-speed diode
BAV10
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
High switching speed: max. 6 ns
General application
Continuous reverse voltage:
max. 60 V
Repetitive peak reverse voltage:
max. 60 V
Repetitive peak forward current:
max. 600 mA.
APPLICATIONS
High-speed switching.
DESCRIPTION
The BAV10 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
handbook, halfpage
MAM246
k
a
The diode is type branded.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
60
V
V
R
continuous reverse voltage
-
60
V
I
F
continuous forward current
see Fig.2; note 1
-
300
mA
I
FRM
repetitive peak forward current
-
600
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
9
A
t = 100
s
-
3
A
t = 1 s
-
1
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
350
mW
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
200
C
1996 Sep 16
3
Philips Semiconductors
Product specification
High-speed diode
BAV10
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 10 mA
-
750
mV
I
F
= 200 mA
-
1.0
V
I
F
= 500 mA
-
1.25
V
I
F
= 200 mA; T
j
= 100
C
-
950
mV
I
R
reverse current
see Fig.5
V
R
= 60 V
-
100
nA
V
R
= 60 V; T
j
= 150
C
-
100
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
-
2.5
pF
t
rr
reverse recovery time
when switched from I
F
= 400 mA to
I
R
= 400 mA; R
L
= 100
;
measured at I
R
= 40 mA; see Fig.7
-
6
ns
V
fr
forward recovery voltage
when switched from I
F
= 400 mA;
t
r
= 30 ns; see Fig.8
-
2
V
when switched from I
F
= 400 mA;
t
r
= 10 ns; see Fig.8
-
1.5
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
R
th j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
500
K/W
1996 Sep 16
4
Philips Semiconductors
Product specification
High-speed diode
BAV10
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0
100
200
400
300
200
0
100
MBG454
Tamb (
o
C)
IF
(mA)
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
0
1
2
600
0
200
400
MBG457
VF (V)
IF
(mA)
(1)
(2)
(3)
(1) T
j
= 175
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG703
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1996 Sep 16
5
Philips Semiconductors
Product specification
High-speed diode
BAV10
Fig.5
Reverse current as a function of junction
temperature.
handbook, halfpage
0
100
Tj (
o
C)
200
10
3
10
2
10
-
1
10
-
2
10
1
IR
(
A)
MGD011
(1)
(2)
(3)
(1) V
R
= 60 V; maximum values.
(2) V
R
= 60 V; typical values.
(3) V
R
= 30 V; typical values.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
10
20
30
VR (V)
4
Cd
(pF)
3
1
0
2
MGD002
1996 Sep 16
6
Philips Semiconductors
Product specification
High-speed diode
BAV10
Fig.7 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
t rr
(1)
I F
t
output signal
t r
t
t p
10%
90%
VR
input signal
V = V I x R
R
F
S
R = 50
S
IF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
(1) I
R
= 40 mA.
Fig.8 Forward recovery voltage test circuit and waveforms.
Input signal: forward pulse duration t
p
= 300 ns; duty factor
= 0.01.
t r
t
t p
10%
90%
I
input
signal
R = 50
S
I
R = 50
i
OSCILLOSCOPE
1 k
450
D.U.T.
MGA882
V fr
t
output
signal
V
1996 Sep 16
7
Philips Semiconductors
Product specification
High-speed diode
BAV10
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.9 SOD27 (DO-35).
Dimensions in mm.
handbook, full pagewidth
MLA428 - 1
25.4 min
4.25
max
1.85
max
25.4 min
0.56
max
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