FEATURES
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Small Signal Transistors (NPN)
B
E
C
.181 (4.6)
mi
n. .492
(
12.5)
.181 (
4
.6)
.142 (3.6)
Dimensions in inches and (millimeters)
TO-92
Ratings at 25 C
ambient temperature unless otherwise specified
.098 (2.5)
max.
.022 (0.55)
4/98
BC337, BC338
Symbol
Value
Unit
Collector-Emitter Voltage
BC337
BC338
V
CES
V
CES
50
30
V
V
Collector-Emitter Voltage
BC337
BC338
V
CEO
V
CEO
45
25
V
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
800
mA
Peak Collector Current
I
CM
1
A
Base Current
I
B
100
mA
Power Dissipation at T
amb
= 25 C
P
tot
625
1)
mW
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
65 to +150
C
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
NPN Silicon Epitaxial Planar Transistors
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power
output stages.
These types are also available subdi-
vided into three groups -16, -25, and -40,
according to their DC current gain. As com-
plementary types, the PNP transistors
BC327 and BC328 are recommended.
On special request, these transistors are also
manufactured in the pin configuration TO-18.
ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
BC337, BC338
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at V
CE
= 1 V, I
C
= 100 mA
Current Gain Group -16
-25
-40
at V
CE
= 1 V, I
C
= 300 mA
Current Gain Group -16
-25
-40
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
100
160
250
60
100
170
160
250
400
130
200
320
250
400
630
Collector-Emitter Cutoff Current
at V
CE
= 45 V
BC337
at V
CE
= 25 V
BC338
at V
CE
= 45 V, T
amb
= 125 C
BC337
at V
CE
= 25 V, T
amb
= 125 C
BC338
I
CES
I
CES
I
CES
I
CES
2
2
100
100
10
10
nA
nA
A
A
Collector-Emitter Breakdown Voltage
at I
C
= 10 mA
BC338
BC337
V
(BR)CEO
V
(BR)CEO
20
45
V
V
Collector-Emitter Breakdown Voltage
at I
C
= 0.1 mA
BC338
BC337
V
(BR)CES
V
(BR)CES
30
50
V
V
Emitter-Base Breakdown Voltage
at I
E
= 0.1 mA
V
(BR)EBO
5
V
Collector Saturation Voltage
at I
C
= 500 mA, I
B
= 50 mA
V
CEsat
0.7
V
Base-Emitter Voltage
at V
CE
= 1 V, I
C
= 300 mA
V
BE
1.2
V
Gain-Bandwidth Product
at V
CE
= 5 V, I
C
= 10 mA, f = 50 MHz
f
T
100
MHz
Collector-Base Capacitance
at V
CB
= 10 V, f = 1 MHz
C
CBO
12
pF
Thermal Resistance Junction to Ambient Air
R
thJA
200
1)
K/W
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
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