FEATURES
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Small Signal Transistors (PNP)
B
E
C
.181 (4.6)
mi
n. .492
(
12.5)
.181 (
4
.6)
.142 (3.6)
Dimensions in inches and (millimeters)
TO-92
Ratings at 25 C
ambient temperature unless otherwise specified
.098 (2.5)
max.
.022 (0.55)
4/98
BC556 THRU BC559
Symbol
Value
Unit
Collector-Base Voltage
BC556
BC557
BC558, BC559
V
CBO
V
CBO
V
CBO
80
50
30
V
V
V
Collector-Emitter Voltage
BC556
BC557
BC558, BC559
V
CES
V
CES
V
CES
80
50
30
V
V
V
Collector-Emitter Voltage
BC556
BC557
BC558, BC559
V
CEO
V
CEO
V
CEO
65
45
30
V
V
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
100
mA
Peak Collector Current
I
CM
200
mA
Peak Base Current
I
BM
200
mA
Peak Emitter Current
I
EM
200
mA
Power Dissipation at T
amb
= 25 C
P
tot
500
1)
mW
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
65 to +150
C
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
PNP Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
These transistors are subdivided into
three groups A, B and C according to
their current gain. The type BC556 is avail-
able in groups A and B, however, the types
BC557 and BC558 can be supplied in all three
groups. The BC559 is a low-noise type available
in all three groups. As complementary types, the
NPN transistors BC546 ... BC549 are recommended.
On special request, these transistors are also manufac-
tured in the pin configuration TO-18.
ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
BC556 THRU BC559
Symbol
Min.
Typ.
Max.
Unit
h-Parameters
at V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
1.6
3.2
6
220
330
600
2.7
4.5
8.7
18
30
60
1.5 10
4
2 10
4
3 10
4
4.5
8.5
15
30
60
110
k
k
k
S
S
S
DC Current Gain
at V
CE
= 5 V, I
C
= 10
A
Current Gain Group A
B
C
at V
CE
= 5 V, I
C
= 2 mA
Current Gain Group A
B
C
at V
CE
= 5 V, I
C
= 100 mA
Current Gain Group A
B
C
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
110
200
420
90
150
270
180
290
500
120
200
400
220
450
800
Thermal Resistance Junction to Ambient Air
R
thJA
250
1)
K/W
Collector Saturation Voltage
at I
C
= 10 mA, I
B
= 0.5 mA
at I
C
= 100 mA, I
B
= 5 mA
V
CEsat
V
CEsat
80
250
300
650
mV
mV
Base Saturation Voltage
at I
C
= 10 mA, I
B
= 0.5 mA
at I
C
= 100 mA, I
B
= 5 mA
V
BEsat
V
BEsat
700
900
mV
mV
Base-Emitter Voltage
at V
CE
= 5 V, I
C
= 2 mA
at V
CE
= 5 V, I
C
= 10 mA
V
BE
V
BE
600
660
750
800
mV
mV
Collector-Emitter Cutoff Current
at V
CE
= 80 V
BC556
at V
CE
= 50 V
BC557
at V
CE
= 30 V
BC558
at V
CE
= 80 V, T
j
= 125 C
BC556
at V
CE
= 50 V, T
j
= 125 C
BC557
at V
CE
= 30 V, T
j
= 125 C
BC558, BC559
I
CES
I
CES
I
CES
I
CES
I
CES
I
CES
0.2
0.2
0.2
15
15
15
4
4
4
nA
nA
nA
A
A
A
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
BC556 THRU BC559
Symbol
Min.
Typ.
Max.
Unit
Gain-Bandwidth Product
at V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
f
T
150
MHz
Collector-Base Capacitance
at V
CB
= 10V, f = 1 MHz
C
CBO
6
pF
Noise Figure
at V
CE
= 5 V, I
C
= 200
A, R
G
= 2 k
,
f = 1 kHz,
f = 200 Hz
BC556, BC557, BC558
BC559
F
F
2
1
10
4
dB
dB
Noise Figure
at V
CE
= 5 V, I
C
= 200
A, R
G
= 2 k
,
f = 30... 15000 Hz
BC559
F
1.2
4
dB
RATINGS AND CHARACTERISTIC CURVES BC556 THRU BC559
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